Design of a Bandgap Reference Circuit with Trimming for Operation at Multiple Voltages and Tolerant to Radiation in 90nm CMOS Technology

2010 ◽  
Author(s):  
E. Vilella ◽  
A. Diéguez
Keyword(s):  
Cmos Technology ◽  
Bandgap Reference ◽  
Reference Circuit

scholarly journals A Radiation Hard Bandgap Reference Circuit in a Standard 0.13 $\mu$m CMOS Technology

2007 ◽  
Vol 54 (6) ◽  
pp. 2727-2733 ◽  
Author(s):  
Vladimir Gromov ◽  
Anne Johan Annema ◽  
Ruud Kluit ◽  
Jan Lammert Visschers ◽  
P. Timmer
Keyword(s):  
Cmos Technology ◽  
Bandgap Reference ◽  
Reference Circuit ◽  
Radiation Hard

A High-Order Curvature-Compensated Bandgap Voltage Reference for Micro-Gyroscope

2012 ◽  
Vol 503 ◽  
pp. 12-17
Author(s):  
Qiang Li ◽  
Xiao Yun Tan ◽  
Guan Shi Wang
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Temperature Dependent ◽  
Power Supply Voltage ◽  
Gyroscope System ◽  
Bandgap Voltage Reference ◽  
Reference Circuit

The reference is an important part of the micro-gyroscope system. The precision and stability of the reference directly affect the precision of the micro-gyroscope. Unlike the traditional bandgap reference circuit, a circuit using a temperature-dependent resistor ratio generated by a highly-resistive poly resistor and a diffusion resistor in CMOS technology is proposed in this paper. The complexity of the circuit is greatly reduced. Implemented with the standard 0.5μm CMOS technology and 9V power supply voltage, in the range of -40~120°C, the temperature coefficient of the proposed bandgap voltage reference can achieve to about 1.6 ppm/°C. The PSRR of the circuit is -107dB.

Contemporary Low Power Design Approaches

2016 ◽  
pp. 101-127
Author(s):  
Lini Lee
Keyword(s):  
Low Power ◽  
Vlsi Design ◽  
Low Power Design ◽  
Cmos Technology ◽  
Simulation Tool ◽  
Bandgap Reference ◽  
Voltage Level ◽  
Dynamic Comparator ◽  
Reference Circuit ◽  
Level Shifter

This chapter describes three contemporary low power design approaches; a resistor-less bandgap reference circuit, a hybrid voltage level shifter with a diode connected NMOS and a modified dynamic comparator, each design with the objective to demonstrate the feasibility of contemporary approaches in achieving lower power VLSI design. All three designs are simulated in 0.18 µm CMOS technology using industrial simulation tool and the results are based on performance parameters defined in the chapter.

scholarly journals A CMOS Bandgap Reference Circuit with a Temperature Coefficient Adjustment Block

2014 ◽  
Vol 9 (1) ◽  
pp. 16-24
Author(s):  
Eder Issao Ishibe ◽  
João Navarro
Keyword(s):  
Temperature Coefficient ◽  
Power Supply ◽  
Cmos Technology ◽  
Reference Voltage ◽  
Voltage Source ◽  
Bandgap Reference ◽  
Voltage Output ◽  
Current Consumption ◽  
Reference Circuit ◽  
Reference Voltage Source

A bandgap reference voltage source with a temperature coefficient adjustment block was proposed. The bandgap topology employs current summation and the circuit was designed through metaheuristic algorithms in a 0.35-mm CMOS technology. Simulations with typical parameters show that the designed circuit has temperature coefficient of 15 ppm/0C, line regulation of 263 ppm/V, and current consumption of 2.71 uA in 1.0 V power supply. An additional 3-bit temperature adjustment block allowed keeping the temperature coefficient values lower than 26.6 ppm/0C for 90% of the circuits, without interfering with the reference voltage output or line regulation values.

A Bandgap Reference with Temperature Coefficient of 13.2 ppm/°C

2014 ◽  
Vol 981 ◽  
pp. 66-69
Author(s):  
Ming Yuan Ren ◽  
En Ming Zhao
Keyword(s):  
Power Supply ◽  
Process Simulation ◽  
Output Voltage ◽  
Operating Temperature ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Analysis Method ◽  
Operation Condition ◽  
Reference Circuit ◽  
Simulation Results

This paper presents a design and analysis method of a bandgap reference circuit. The Bandgap design is realized through the 0.18um CMOS process. Simulation results show that the bandgap circuit outputs 1.239V in the typical operation condition. The variance rate of output voltage is 0.016mV/°C? with the operating temperature varying from-60°C? to 160°C?. And it is 3.27mV/V with the power supply changes from 1.8V to 3.3V.

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