An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs

2011 IEEE Computer Society Annual Symposium on VLSI ◽

10.1109/isvlsi.2011.86 ◽

2011 ◽

Cited By ~ 2

Author(s):

Harshit Agnihotri ◽

Abhishek Ranjan ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Short Channel

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A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects

Solid-State Electronics ◽

10.1016/j.sse.2017.01.003 ◽

2017 ◽

Vol 130 ◽

pp. 33-40 ◽

Cited By ~ 9

Author(s):

Raksharam ◽

Aloke K. Dutta

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.921980 ◽

2008 ◽

Vol 55 (6) ◽

pp. 1441-1448 ◽

Cited By ~ 51

Author(s):

FranÇois Lime ◽

Benjamin Iniguez ◽

Oana Moldovan

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Two Dimensional ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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A surface-potential based drain current model for short-channel symmetric double-gate junctionless transistor

Journal of Computational Electronics ◽

10.1007/s10825-015-0723-z ◽

2015 ◽

Vol 15 (1) ◽

pp. 45-52 ◽

Cited By ~ 8

Author(s):

Ratul Kumar Baruah ◽

Roy P. Paily

Keyword(s):

Surface Potential ◽

Current Model ◽

Drain Current ◽

Double Gate ◽

Short Channel ◽

Junctionless Transistor

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Compact Drain Current Model of Silicon-Nanotubebased Double Gate-All-Around (DGAA) MOSFETs Incorporating Short Channel Effects

2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc47361.2019.9084000 ◽

2019 ◽

Author(s):

Arun Kumar ◽

P. S. T. N. Srinivas ◽

Pramod Kumar Tiwari

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523503 ◽

2013 ◽

Cited By ~ 1

Author(s):

M. Cheralathan ◽

C. Sampedro ◽

F. Gamiz ◽

B. Iniguez

Keyword(s):

Temperature Dependence ◽

Current Model ◽

Drain Current ◽

Double Gate

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An analytical charge-based drain current model for nano-scale In0.52Al0.48As–In0.53Ga0.47as a separated double-gate HEMT

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/11/115003 ◽

2010 ◽

Vol 25 (11) ◽

pp. 115003 ◽

Cited By ~ 1

Author(s):

Servin Rathi ◽

Jyotika Jogi ◽

Mridula Gupta ◽

R S Gupta

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Nano Scale

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An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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Analytical drain current model to study the impact of interface trap charges on device performance of Double Gate Ge Ferroelectric FET (DGGeFeFET)

2018 Conference on Emerging Devices and Smart Systems (ICEDSS) ◽

10.1109/icedss.2018.8544314 ◽

2018 ◽

Author(s):

Monika Bansal ◽

Harsupreet Kaur

Keyword(s):

Current Model ◽

Drain Current ◽

Interface Trap ◽

Device Performance ◽

Double Gate ◽

The Impact ◽

Trap Charges

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A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating velocity saturation

2010 3rd International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2010.5424994 ◽

2010 ◽

Author(s):

Lining Zhang ◽

Xingye Zhou ◽

Yiwen Xu ◽

Lin Chen ◽

Wang Zhou ◽

...

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Velocity Saturation ◽

Surrounding Gate

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Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket

Microelectronics Reliability ◽

10.1016/j.microrel.2015.09.014 ◽

2016 ◽

Vol 59 ◽

pp. 30-36 ◽

Cited By ~ 7

Author(s):

Ping Wang ◽

YiQi Zhuang ◽

Cong Li ◽

Zhi Jiang ◽

YuQi Liu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Current Model ◽

Drain Current ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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