Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

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Effects of Post Deposition Annealing Ambient on Interfacial and Electrical Properties of HfO2/Ge3N4 Gate Stacks on Ge Mos Devices

ECS Meeting Abstracts ◽

10.1149/ma2018-03/3/200 ◽

2018 ◽

Keyword(s):

Electrical Properties ◽

Gate Stacks ◽

Post Deposition Annealing ◽

Mos Devices ◽

Post Deposition

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Influences of Plasma Processed Interface Layers on Germanium MOS Devices with ALD Grown HfO2

MRS Proceedings ◽

10.1557/proc-0996-h04-02 ◽

2007 ◽

Vol 996 ◽

Author(s):

Takuya Sugawara ◽

Raghavasimhan Sreenivasan ◽

Yasuhiro Oshima ◽

Paul C. McIntyre

Keyword(s):

Electrical Properties ◽

Interface Layer ◽

Hafnium Dioxide ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Flat Band ◽

Mos Capacitors ◽

Mos Devices ◽

Interface Layers ◽

Silicon Based

AbstractGermanium and hafnium-dioxide (HfO2) stack structures' physical and electrical properties were studied based on the comparison of germanium and silicon based metal-oxide-semiconductor (MOS) capacitors' electrical properties. In germanium MOS capacitor with oxide/oxynitride interface layer, larger negative flat-band-voltage (Vfb) shift compared with silicon based MOS capacitors was observed. Secondary ion mass spectrum (SIMS) characteristics of HfO2-germanium stack structure with germanium oxynitride (GeON) interfacial layer showed germanium out diffusion into HfO2. These results indicate that the germanium out diffusion into HfO2 would be the origin of the germanium originated negative Vfb shift. Using Ta3N5 layer as a germanium passivation layer, reduced Vfb shift and negligible hysteresis were observed. These results suggest that the selection of passivation layer strongly influences the electrical properties of germanium based MOS devices.

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Abnormal Electrical Properties and Enhanced Gas-Sensing Performance of Graphene/Si Schottky Junction

Sensor Letters ◽

10.1166/sl.2015.3493 ◽

2015 ◽

Vol 13 (5) ◽

pp. 381-386

Author(s):

Vu Van Quang ◽

Nguyen Duc Hoa ◽

Nguyen Van Duy ◽

Nguyen Ngoc Trung ◽

Nguyen Van Hieu

Keyword(s):

Electrical Properties ◽

Gas Sensing ◽

Schottky Junction ◽

Sensing Performance

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Electrical properties of MOS devices made with SILO technology

10.1109/iedm.1982.190257 ◽

1982 ◽

Cited By ~ 1

Author(s):

J. Hui ◽

T.Y. Chiu ◽

S. Wong ◽

W.G. Oldham

Keyword(s):

Electrical Properties ◽

Mos Devices

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Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.741 ◽

2013 ◽

Vol 740-742 ◽

pp. 741-744 ◽

Cited By ~ 7

Author(s):

Heiji Watanabe ◽

Daisuke Ikeguchi ◽

Takashi Kirino ◽

Shuhei Mitani ◽

Yuki Nakano ◽

...

Keyword(s):

Electrical Properties ◽

Thermal Annealing ◽

Uv Irradiation ◽

Uv Light ◽

Interface State ◽

State Density ◽

Mos Devices ◽

Novel Approach ◽

Subsequent Thermal Annealing ◽

Thermally Grown

We report on the harmful impact of ultraviolet (UV) light irradiation on thermally grown SiO2/4H-SiC(0001) structures and its use in subsequent thermal annealing for improving electrical properties of SiC-MOS devices. As we previously reported [1], significant UV-induced damage, such as positive flatband voltage shift and hysteresis in capacitance-voltage curves as well as increased interface state density, was observed for SiC-MOS devices with thermally grown oxides. Interestingly, the subsequent annealing of damaged SiO2/SiC samples resulted in superior electrical properties to those for untreated (fresh) devices. These findings imply that UV irradiation of the SiO2/SiC structure is effective for eliciting pre-existing carbon-related defects and transforming them into a simple configuration that can be easily passivated by thermal treatment.

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