In situ cleaning effect on the electrical properties of Ge MOS devices by Ar gas anneal

Compared to TMA, MgCp2is an effective remover of Ge oxides with a more stable interface quality resulting in better electrical properties of Ge-based MOS devices.

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In situ TEM measurements of the electrical properties of interface dislocations

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131322 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1338-1339

Author(s):

F. M. Ross ◽

R. Hull ◽

D. Bahnck ◽

J. C. Bean ◽

L. J. Peticolas ◽

...

Keyword(s):

Electrical Properties ◽

Electronic Device ◽

In Situ Tem ◽

Device Performance ◽

Misfit Dislocations ◽

Electrical Characteristics ◽

Strained Layer ◽

Transmission Electron ◽

Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.105907 ◽

2021 ◽

Vol 132 ◽

pp. 105907

Author(s):

Jiaqi He ◽

Wei-Chih Cheng ◽

Yang Jiang ◽

Mengya Fan ◽

Guangnan Zhou ◽

...

Keyword(s):

Electrical Properties ◽

Thin Barrier

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Temperature Dependence of Electrical Properties and Crystal Structure of 0.29Pb(In1/2Nb1/2)O3–0.44Pb(Mg1/3Nb2/3)O3–0.27PbTiO3Single Crystals

Advances in Condensed Matter Physics ◽

10.1155/2013/382140 ◽

2013 ◽

Vol 2013 ◽

pp. 1-5

Author(s):

Qian Li ◽

Yun Liu ◽

Andrew Studer ◽

Zhenrong Li ◽

Ray Withers ◽

...

Keyword(s):

Crystal Structure ◽

Phase Transition ◽

Electrical Properties ◽

Dielectric Permittivity ◽

Neutron Diffraction ◽

Electrical Measurement ◽

Temperature Dependent ◽

Electromechanical Properties ◽

Polar Order

We characterized the temperature dependent (~25–200°C) electromechanical properties and crystal structure of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3single crystals usingin situelectrical measurement and neutron diffraction techniques. The results show that the poled crystal experiences an addition phase transition around 120°C whereas such a transition is absent in the unpoled crystal. It is also found that the polar order persists above the maximum dielectric permittivity temperature at which the crystal shows a well-defined antiferroelectric behavior. The changes in the electrical properties and underlying crystal structure are discussed in the paper.

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A Comparison of Mos Devices with In-Situ Boron Doped Polysilicon and Poly Sige Gates Deposited in an Rtcvd System Using S12H6 and B2H6 Gas Mixture

MRS Proceedings ◽

10.1557/proc-525-207 ◽

1998 ◽

Vol 525 ◽

Author(s):

M. R. Mirabedini ◽

V. Z-Q Li ◽

A. R. Acker ◽

R. T. Kuehn ◽

D. Venables ◽

...

Keyword(s):

Flat Band ◽

Gas Mixture ◽

Mos Capacitors ◽

Mos Devices ◽

Boron Doped ◽

Depletion Effect ◽

Polysilicon Films ◽

Sims Analysis ◽

Boron Penetration

ABSTRACTIn this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.

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Properties of Thin SiO2 Films with In-Situ Deposition of Poly Si Electrodes

MRS Proceedings ◽

10.1557/proc-146-47 ◽

1989 ◽

Vol 146 ◽

Cited By ~ 2

Author(s):

Paihung Pan ◽

Ahmad Kermani ◽

Wayne Berry ◽

Jimmy Liao

Keyword(s):

Electrical Properties ◽

Breakdown Strength ◽

Chemical Vapor ◽

Interface State ◽

State Density ◽

In Situ Deposition ◽

Different Temperatures ◽

Flatband Voltage ◽

Si Films

ABSTRACTElectrical properties of thin (12 nm) SiO2 films with and without in-situ deposited poly Si electrodes have been studied. Thin SiO2 films were grown by the rapid thermal oxidation (RTO) process and the poly Si films were deposited by the rapid thermal chemical vapor deposition (RTCVD) technique at 675°C and 800°C. Good electrical properties were observed for SiO2 films with thin in-situ poly Si deposition; the flatband voltage was ∼ -0.86 V, the interface state density was < 2 × 1010/cm2/eV, and breakdown strength was > 10 MV/cm. The properties of RTCVD poly Si were also studied. The grain size was 10-60 rim before anneal and was 50-120 rim after anneal. Voids were found in thin (< 70 nm) RTCVD poly Si films. No difference in either SiO2 properties or poly Si properties was observed for poly Si films deposited at different temperatures.

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The macroscopic electrical properties of in-situ composite superconductors

Composites ◽

10.1016/0010-4361(85)90327-1 ◽

1985 ◽

Vol 16 (4) ◽

pp. 337

Keyword(s):

Electrical Properties ◽

In Situ Composite ◽

Composite Superconductors

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Characterization of YBa2Cu4O8 high temperature electrical properties and thermodynamic stability

Journal of Materials Research ◽

10.1557/jmr.1991.2054 ◽

1991 ◽

Vol 6 (10) ◽

pp. 2054-2058 ◽

Cited By ~ 11

Author(s):

B-S. Hong ◽

T.O. Mason

Keyword(s):

High Temperature ◽

Electrical Property ◽

Electrical Properties ◽

Seebeck Coefficient ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Pressure Range ◽

Stability Range

Via in situ electrical property measurements (conductivity, Seebeck coefficient) over the temperature range 500–800 °C and oxygen partial pressure range 10−4-1 atm, the equilibrium transport properties and stability range of YBa2Cu4O8 were determined. YBa2Cu4O8 behaves like the intrinsically mixed-valent compound, magnetite (Fe3O4), with small variations in electrical properties with changes in oxygen partial pressure. The decomposition boundary to YBa2Cu3O6+y (or YBa2Cu3.5O7.5±z) and CuO occurs at log(po2, atm) = −1.24 × 104/T(K) + 11.01(773 ⋚ T(K) ⋚ 1073).

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