scholarly journals Reverse Leakage Current Transport mechanisms in Ni/Au Al0.58Ga0.42N Schottky type photodetectors

2021 ◽  
pp. 1-1
Author(s):  
Guofeng Yang ◽  
Yan Gu ◽  
Yushen Liu ◽  
Feng Xie ◽  
Yuhang Li ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Reverse Leakage Current ◽  
Schottky Type

scholarly journals Leakage current transport mechanisms of La0.67Sr0.33MnO3/BaTiO3 bilayer films grown on Nb:SrTiO3

2015 ◽  
Vol 38 (3) ◽  
pp. 725-729 ◽  
Author(s):  
PAN RUIKUN ◽  
LIU PANKE ◽  
LI MINGKAI ◽  
TAO HAIZHENG ◽  
LI PAI ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Bilayer Films

The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes

2016 ◽  
Vol 33 (11) ◽  
pp. 117301 ◽  
Author(s):  
Feng Dai ◽  
Xue-Feng Zheng ◽  
Pei-Xian Li ◽  
Xiao-Hui Hou ◽  
Ying-Zhe Wang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Transport Mechanisms ◽  
Light Emitting ◽  
Reverse Leakage Current ◽  
Ultraviolet Light Emitting Diodes

Annealing effect and leakage current transport mechanisms of high k ternary GdAlOx gate dielectrics

2019 ◽  
Vol 791 ◽  
pp. 839-846 ◽  
Author(s):  
Shuan Li ◽  
Yanqing Wu ◽  
Hongen Yu ◽  
Kai Fu ◽  
Jie Zheng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Annealing Effect ◽  
Current Transport ◽  
Transport Mechanisms ◽  
High K

β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

2021 ◽  
Vol 118 (12) ◽  
pp. 122102
Author(s):  
Qinglong Yan ◽  
Hehe Gong ◽  
Jincheng Zhang ◽  
Jiandong Ye ◽  
Hong Zhou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Current Modulation ◽  
Reverse Leakage Current

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

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