An ultra high-resolution low propagation delay time and low power with 1.25GS/s CMOS dynamic latched comparator for high-speed SAR ADCs in 180nm technology

Author(s):  
Sina Mahdavi ◽  
Mahsa Jafarzadeh ◽  
Maryam Poreh ◽  
Shadi Ataei
2013 ◽  
Vol 22 (03) ◽  
pp. 1350004 ◽  
Author(s):  
LEI ZHAO ◽  
YINTANG YANG ◽  
ZHANGMING ZHU

A high speed low power latched comparator is presented. The bipolar junction structures are used to enhance latch speed, and the controller is proposed to reduce latch current drain while providing complementary metal oxide semiconductor (CMOS) level latch signals. The measured delay time of the comparator is 132.5 ps and the power consumption is 127 μW at 100 MHz. The proposed circuit is used in a 14-bit 100-MSPS SHA-Less pipelined ADC, and is designed by ASMC 0.35-μm 3.3 V BiCMOS technology.


2005 ◽  
Vol 18 (3) ◽  
pp. 505-514
Author(s):  
Dusanka Bundalo ◽  
Branimir Ðordjevic ◽  
Zlatko Bundalo

Principles and possibilities of synthesis and design of quaternary multiple valued regenerative CMOS logic circuits with high-impedance output state are de- scribed and proposed in the paper. Two principles of synthesis and implementation of CMOS regenerative quaternary multiple-valued logic circuits with high-impedance output state are proposed and described: the simple circuits with smaller number of transistors, and the buffer/driver circuits with decreased propagation delay time. The schemes of such logic circuits are given and analyzed by computer simulations. Some of computer simulation results confirming descriptions and conclusions are also given in the paper.


2013 ◽  
Vol 22 (08) ◽  
pp. 1350068
Author(s):  
XINSHENG WANG ◽  
YIZHE HU ◽  
LIANG HAN ◽  
JINGHU LI ◽  
CHENXU WANG ◽  
...  

Process and supply variations all have a large influence on current-mode signaling (CMS) circuits, limiting their application on the fields of high-speed low power communication over long on-chip interconnects. A variation-insensitive CMS scheme (CMS-Bias) was offered, employing a particular bias circuit to compensate the effects of variations, and was robust enough against inter-die and intra-die variations. In this paper, we studied in detail the principle of variation tolerance of the CMS circuit and proposed a more suitable bias circuit for it. The CMS-Bias with the proposed bias circuit (CMS-Proposed) can acquire the same variation tolerance but consume less energy, compared with CMS-Bias with the original bias circuit (CMS-Original). Both the CMS schemes were fabricated in 180 nm CMOS technology. Simulation and measured results indicate that the two CMS interconnect circuits have the similar signal propagation delay when driving signal over a 10 mm line, but the CMS-Proposed offers about 9% reduction in energy/bit and 7.2% reduction in energy-delay-product (EDP) over the CMS-Original. Simulation results show that the two CMS schemes only change about 5% in delay when suffering intra-die variations, and have the same robustness against inter-die variations. Both simulation and measurements all show that the proposed bias circuits, employing self-biasing structure, contribute to robustness against supply variations to some extent. Jitter analysis presents the two CMS schemes have the same noise performance.


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