Impact of Highly Compressive Interlayer-Dielectric-$ \hbox{SiN}_{x}$ Stressing Layer on $\hbox{1}/f$ Noise and Reliability of SiGe-Channel pMOSFETs
2010 ◽
Vol 31
(12)
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pp. 1368-1370
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1998 ◽
Vol 42
(11)
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pp. 2031-2037
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2014 ◽
Vol 14
(1)
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pp. 57-65
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2003 ◽
Vol 216
(1-4)
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pp. 98-105
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