Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors

2012 ◽  
Vol 33 (7) ◽  
pp. 1000-1002 ◽  
Author(s):  
Tien-Yu Hsieh ◽  
Ting-Chang Chang ◽  
Te-Chih Chen ◽  
Ming-Yen Tsai ◽  
Yu-Te Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Light Illumination ◽  
Degradation Behavior ◽  
Drain Bias

The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors

2012 ◽  
Vol 100 (22) ◽  
pp. 222901 ◽  
Author(s):  
Sheng-Yao Huang ◽  
Ting-Chang Chang ◽  
Li-Wei Lin ◽  
Man-Chun Yang ◽  
Min-Chen Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Degradation Behavior ◽  
Bias Stress ◽  
Drain Bias

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress

2017 ◽  
Vol 32 (2) ◽  
pp. 91-96
Author(s):  
张猛 ZHANG Meng ◽  
夏之荷 XIA Zhi-he ◽  
周玮 ZHOU Wei ◽  
陈荣盛 CHEN Rong-sheng ◽  
王文 WONG Man ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Degradation Mechanism ◽  
Gate Bias ◽  
Degradation Behavior ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Gate Bias Stress

Crystallization and Evaluation of Non-Stoichiometric Silicon-Carbon Films for Hetero Thin-Film Transistors

1996 ◽  
Vol 452 ◽  
Author(s):  
Kwangsoo Choi ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Carbon Films ◽  
Light Illumination ◽  
Field Effect Mobility ◽  
Switching Device ◽  
Silicon Carbon ◽  
Experimental Works ◽  
Intense Light

AbstractExperimental works have been reviewed on poly-Si/poly-SiCx hetero TFTs aiming at extremely low off-current even under intense light illumination conditions with reasonable field-effect mobility. The results indicated that the hetero TFT having the stacked poly-Si/poly-SiCx layers is promising as a switching device in matrices

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