Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

2015 ◽  
Vol 36 (4) ◽  
pp. 333-335 ◽  
Author(s):  
Writam Banerjee ◽  
Xiaoxin Xu ◽  
Hongtao Liu ◽  
Hangbing Lv ◽  
Qi Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Aluminium Oxide ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Threshold Switching

scholarly journals Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2Based RRAM Devices

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Lifeng Liu ◽  
Yi Hou ◽  
Weibing Zhang ◽  
Dedong Han ◽  
Yi Wang
Keyword(s):  
Atomic Layer Deposition ◽  
Structural Properties ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Resistive Random Access Memory ◽  
Ozone Treatment ◽  
Access Memory ◽  
Layer Deposition

HfAlO2based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2based RRAM devices was investigated. Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2based RRAM devices with the ozone treatment is significantly improved. The uniformity improvement of HfAlO2based RRAM devices is related to changes in compositional and structural properties of the HfAlO2resistive switching film with the ozone treatment.

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

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