Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology Node

2019 ◽  
Vol 40 (6) ◽  
pp. 985-988 ◽  
Author(s):  
Pragya Kushwaha ◽  
Harshit Agarwal ◽  
Yen-Kai Lin ◽  
Avirup Dasgupta ◽  
Ming-Yen Kao ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Advanced Technology ◽  
Technology Node

Root Cause Analysis for Pin Leakage

2016 ◽  
Author(s):  
Zhigang Song ◽  
Jochonia Nxumalo ◽  
Manuel Villalobos ◽  
Sweta Pendyala
Keyword(s):  
Failure Analysis ◽  
Root Cause Analysis ◽  
Advanced Technology ◽  
Process Step ◽  
Cause Analysis ◽  
Hard Mask ◽  
Technology Node ◽  
Root Cause ◽  
Tools And Techniques

Abstract Pin leakage continues to be on the list of top yield detractors for microelectronics devices. It is simply manifested as elevated current with one pin or several pins during pin continuity test. Although many techniques are capable to globally localize the fault of pin leakage, root cause analysis and identification for it are still very challenging with today’s advanced failure analysis tools and techniques. It is because pin leakage can be caused by any type of defect, at any layer in the device and at any process step. This paper presents a case study to demonstrate how to combine multiple techniques to accurately identify the root cause of a pin leakage issue for a device manufactured using advanced technology node. The root cause was identified as under-etch issue during P+ implantation hard mask opening for ESD protection diode, causing P+ implantation missing, which was responsible for the nearly ohmic type pin leakage.

OBIRCH Driven Failure Analysis for Process Development of 120 nm to 65 nm Technology Nodes

2004 ◽  
Author(s):  
R. Ross ◽  
K. Ly ◽  
M. de la Bardonnie ◽  
L.F.Tz. Kwakman ◽  
F. Lorut ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Process Development ◽  
Advanced Technology ◽  
Manufacturing Processes ◽  
Critical Dimensions ◽  
Technology Node ◽  
Development Failure ◽  
Fault Characterization ◽  
Technology Nodes

Abstract Given the ever increasing complexity of conducting failure analysis on today's latest generation manufacturing processes, the authors have investigated and implemented OBIRCH techniques into process development failure analysis practices. They describe their applications of OBIRCH to 120, 90, and 65 nm samples and their methods for interpreting the results. The OBIRCH technique has the ability to address faults within most structure types and quickly give information on a number of failing sites. It has proven itself as a necessary tool for failure analysis at advanced technology nodes, where fault characterization is getting difficult due to extremely small critical dimensions. The results obtained using the OBIRCH tool have been excellent on 120nm and initial 90nm results. The authors have not yet analyzed enough 65nm samples to form any type of conclusion regarding the tools ability at this technology node.

Economics of semiconductor scaling - a cost analysis for advanced technology node

2019 ◽  
Author(s):  
A. Mallik ◽  
J. Ryckaert ◽  
R-H. Kim ◽  
P. Debacker ◽  
S. Decoster ◽  
...  
Keyword(s):  
Cost Analysis ◽  
Advanced Technology ◽  
Technology Node

Scaling Challenges for Advanced CMOS Devices

2017 ◽  
Vol 26 (01n02) ◽  
pp. 1740001 ◽  
Author(s):  
Ajey P. Jacob ◽  
Ruilong Xie ◽  
Min Gyu Sung ◽  
Lars Liebmann ◽  
Rinus T. P. Lee ◽  
...  
Keyword(s):  
Technology Development ◽  
Semiconductor Industry ◽  
New Technology ◽  
Advanced Technology ◽  
Power Performance ◽  
Technology Node ◽  
Cmos Transistor ◽  
Early Exploration ◽  
Line Elements ◽  
Advanced Development

The economic health of the semiconductor industry requires substantial scaling of chip power, performance, and area with every new technology node that is ramped into manufacturing in two year intervals. With no direct physical link to any particular design dimensions, industry wide the technology node names are chosen to reflect the roughly 70% scaling of linear dimensions necessary to enable the doubling of transistor density predicted by Moore’s law and typically progress as 22nm, 14nm, 10nm, 7nm, 5nm, 3nm etc. At the time of this writing, the most advanced technology node in volume manufacturing is the 14nm node with the 7nm node in advanced development and 5nm in early exploration. The technology challenges to reach thus far have not been trivial. This review addresses the past innovation in response to the device challenges and discusses in-depth the integration challenges associated with the sub-22nm non-planar finFET technologies that are either in advanced technology development or in manufacturing. It discusses the integration challenges in patterning for both the front-end-of-line and back-end-of-line elements in the CMOS transistor. In addition, this article also gives a brief review of integrating an alternate channel material into the finFET technology, as well as next generation device architectures such as nanowire and vertical FETs. Lastly, it also discusses challenges dictated by the need to interconnect the ever-increasing density of transistors.

Sign in / Sign up

Export Citation Format

Share Document