OBIRCH Driven Failure Analysis for Process Development of 120 nm to 65 nm Technology Nodes

2004 ◽  
Author(s):  
R. Ross ◽  
K. Ly ◽  
M. de la Bardonnie ◽  
L.F.Tz. Kwakman ◽  
F. Lorut ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Process Development ◽  
Advanced Technology ◽  
Manufacturing Processes ◽  
Critical Dimensions ◽  
Technology Node ◽  
Development Failure ◽  
Fault Characterization ◽  
Technology Nodes

Abstract Given the ever increasing complexity of conducting failure analysis on today's latest generation manufacturing processes, the authors have investigated and implemented OBIRCH techniques into process development failure analysis practices. They describe their applications of OBIRCH to 120, 90, and 65 nm samples and their methods for interpreting the results. The OBIRCH technique has the ability to address faults within most structure types and quickly give information on a number of failing sites. It has proven itself as a necessary tool for failure analysis at advanced technology nodes, where fault characterization is getting difficult due to extremely small critical dimensions. The results obtained using the OBIRCH tool have been excellent on 120nm and initial 90nm results. The authors have not yet analyzed enough 65nm samples to form any type of conclusion regarding the tools ability at this technology node.

Root Cause Analysis for Pin Leakage

2016 ◽  
Author(s):  
Zhigang Song ◽  
Jochonia Nxumalo ◽  
Manuel Villalobos ◽  
Sweta Pendyala
Keyword(s):  
Failure Analysis ◽  
Root Cause Analysis ◽  
Advanced Technology ◽  
Process Step ◽  
Cause Analysis ◽  
Hard Mask ◽  
Technology Node ◽  
Root Cause ◽  
Tools And Techniques

Abstract Pin leakage continues to be on the list of top yield detractors for microelectronics devices. It is simply manifested as elevated current with one pin or several pins during pin continuity test. Although many techniques are capable to globally localize the fault of pin leakage, root cause analysis and identification for it are still very challenging with today’s advanced failure analysis tools and techniques. It is because pin leakage can be caused by any type of defect, at any layer in the device and at any process step. This paper presents a case study to demonstrate how to combine multiple techniques to accurately identify the root cause of a pin leakage issue for a device manufactured using advanced technology node. The root cause was identified as under-etch issue during P+ implantation hard mask opening for ESD protection diode, causing P+ implantation missing, which was responsible for the nearly ohmic type pin leakage.

Conductive-AFM for Scan Logic Failure Analysis at Advanced Technology Nodes

2016 ◽  
Author(s):  
Chuan Zhang ◽  
Oh Chong Khiam ◽  
Esther P.Y. Chen
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Leading Edge ◽  
Advanced Technology ◽  
The Novel ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Technology Nodes ◽  
Process Structure

Abstract The increase in complexity of process, structure, and design not only increases the amount of failure analysis (FA) work significantly, but also leads to more complicated failure modes. To meet the need of high success rate and fast throughput FA operation at the leading-edge nodes, novel FA techniques have to be explored and incorporated into the routine FA flow. One of the novel techniques incorporated into the presented scan logic FA flow is the conductive-atomic force microscopy (CAFM) technique. This paper demonstrates CAFM technique as a powerful and efficient solution for scan logic failure analysis at advanced technology nodes. Several failure modes in scan logic FA are used as examples to illustrate how CAFM provides excellent solutions to some of the very challenging FA problems. The gate to active short in nFET devices, resistive contact, and open defect on gate contact are some modes used.

scholarly journals Preparation, Imaging, and Design Extraction of the Front-End-of-Line and Middle-of-Line in a 14 nm Node FinFET Device

2021 ◽  
Author(s):  
Adam R. Waite ◽  
Yash Patel ◽  
John Kelley ◽  
Jon Scholl ◽  
Joshua Baur ◽  
...  
Keyword(s):  
Process Development ◽  
Region Of Interest ◽  
Verification And Validation ◽  
Advanced Technology ◽  
Timely Manner ◽  
New Techniques ◽  
Technology Node ◽  
Front End ◽  
3D Architecture ◽  
Silicon Device

This paper presents the first design reconstruction on the Front-End-of-Line and Middle-of-Line layers of a 14 nm node FinFET design. To accomplish this, a large region of interest within a custom designed 14 nm node ASIC device was delayered, imaged, and analyzed to reconstruct the GDSII design file and verify a 100% match to the golden GDSII design. This work leveraged previous developments in each stage of the front half of the cooperative Verification and Validation (V&V) workflow combined with new techniques and processes developed for processing 3D architecture FET devices. We have demonstrated the critical first step to performing a full V&V workflow on an advanced technology node device, starting from the fabricated silicon device to the design extraction. The process development knowledge gained while reaching this milestone will further accelerate future advancements toward providing trusted advanced technology node devices in a timely manner. <br>

Middle of Line (MoL) Cleaning Challenges in Sub-20nm Node Device Manufacturing

2016 ◽  
Vol 255 ◽  
pp. 105-110 ◽  
Author(s):  
Sherjang Singh ◽  
Pranesh Muralidhar ◽  
Samuel Mallabar ◽  
Silas Scott
Keyword(s):  
Advanced Technology ◽  
Process Window ◽  
Particle Removal ◽  
Aqua Regia ◽  
Critical Dimensions ◽  
Device Scaling ◽  
Immersion Lithography ◽  
Physical Particle ◽  
Technology Nodes ◽  
Droplet Spray

In advanced technology nodes (sub 20nm), the gate & active contact architecture has become very complex. This architecture not only introduced new materials but also integrated additional patterning mask layers. This necessitated a separate Middle of Line (MoL) zone whereas conventionally contact integration used to be a Front End of Line (FEoL) process. This paper discusses wet cleaning challenges in MoL that were unforeseen with conventional contact architecture. Typical chemistries such as Sulfuric Peroxide Mixture (SPM), dilute Hydrofloric Acid (dHF), Aqua Regia, Standard Clean 1 (SC1), etc. that were used for contact cleaning or in salicidization process are found to be too aggressive due to smaller process window, shrinking Critical Dimensions (CD), and other challenges arising from overall tighter tolerances. As a result of device scaling, most of the MoL mask patterning is done with immersion lithography and double patterning techniques such as Litho-Etch Litho-Etch (LELE) are also needed. Immersion lithography is very sensitive to pre-litho backside and frontside particles which make pre-litho cleaning in MoL very critical as well. Also due to lack of high aspect ratio features in MoL (mostly contact holes), physical particle removal techniques such as droplet spray and MegaSonic can be very effectively used to achieve higher Particle Removal Efficiency (PRE). This paper summarizes such different scenarios & related challenges.

Study of Static Noise Margin and Circuit Analysis on Advanced Technology Node SRAM Devices by Nanoprobing

2013 ◽  
Author(s):  
M.K. Dawood ◽  
T.H. Ng ◽  
P.K. Tan ◽  
H. Tan ◽  
S. James ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Circuit Analysis ◽  
Advanced Technology ◽  
Static Noise Margin ◽  
Tem Analysis ◽  
Technology Node ◽  
Noise Margin ◽  
The Individual ◽  
Static Noise

Abstract With further technology scaling, it becomes increasingly challenging for conventional methods of failure analysis (FA) to identify the cause of a failure. In this work, we present three case studies on the utilization of advanced nanoprobing for SRAM circuit analysis and fault identification on 20 nm technology node SRAM single bit devices. In the first 2 case studies, conventional failure analysis by passive voltage contrast (PVC) failed to identify any abnormality in the known failed bit. In the third case study, an abnormally bright PVC was observed by PVC inspection. In all three case studies, static noise margin of the SRAM bits during hold and read operations were performed to understand the circuit behavior of the failed bit cell. Next, nanoprobing on the individual transistors were performed to determine the failing transistor within the bit and the possible cause of the failure. TEM analysis was performed to identify and verify the failure mechanism.

scholarly journals Preparation, Imaging, and Design Extraction of the Front-End-of-Line and Middle-of-Line in a 14 nm Node FinFET Device

2021 ◽  
Author(s):  
Adam R. Waite ◽  
Yash Patel ◽  
John Kelley ◽  
Jon Scholl ◽  
Joshua Baur ◽  
...  
Keyword(s):  
Process Development ◽  
Region Of Interest ◽  
Verification And Validation ◽  
Advanced Technology ◽  
Timely Manner ◽  
New Techniques ◽  
Technology Node ◽  
Front End ◽  
3D Architecture ◽  
Silicon Device

This paper presents the first design reconstruction on the Front-End-of-Line and Middle-of-Line layers of a 14 nm node FinFET design. To accomplish this, a large region of interest within a custom designed 14 nm node ASIC device was delayered, imaged, and analyzed to reconstruct the GDSII design file and verify a 100% match to the golden GDSII design. This work leveraged previous developments in each stage of the front half of the cooperative Verification and Validation (V&V) workflow combined with new techniques and processes developed for processing 3D architecture FET devices. We have demonstrated the critical first step to performing a full V&V workflow on an advanced technology node device, starting from the fabricated silicon device to the design extraction. The process development knowledge gained while reaching this milestone will further accelerate future advancements toward providing trusted advanced technology node devices in a timely manner. <br>

SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

2013 ◽  
Author(s):  
Erik Paul ◽  
Holger Herzog ◽  
Sören Jansen ◽  
Christian Hobert ◽  
Eckhard Langer
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Case Studies ◽  
State Of The Art ◽  
Root Cause ◽  
Highly Efficient ◽  
Technology Nodes ◽  
Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

High-Throughput, Site-Specific Sample Prep of Ultra-Thin TEM Lamella for Process Metrology and Failure Analysis

2012 ◽  
Author(s):  
Roger Alvis ◽  
Jeff Blackwood ◽  
Sang-Hoon Lee ◽  
Matthew Bray
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Process Monitoring ◽  
High Throughput ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Memory Devices ◽  
Site Specific ◽  
Critical Dimensions ◽  
Tem Lamella

Abstract Semiconductor devices with critical dimensions less than 20nm are now being manufactured in volume. A challenge facing the failure analysis and process-monitoring community is two-fold. The first challenge of TEM sample prep of such small devices is that the basic need to end-point on a feature-of-interest pushes the imaging limit of the instrument being used to prepare the lamella. The second challenge posed by advanced devices is to prepare an artifact-free lamella from non-planar devices such as finFETs as well as from structures incorporating ‘non-traditional’ materials. These challenges are presently overcome in many advanced logic and memory devices in the focused ion beam-based TEM sample preparation processes by inverting the specimen prior to thinning to electron transparency. This paper reports a highthroughput method for the routine preparation of artifact-free TEM lamella of 20nm thickness, or less.

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