Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing

2019 ◽  
Vol 40 (9) ◽  
pp. 1463-1466 ◽  
Author(s):  
Jie Zhang ◽  
Maria Gabriela Sales ◽  
Guangyang Lin ◽  
Peng Cui ◽  
Paul Pepin ◽  
...  
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Thin Film Transistors ◽  
Tio2 Thin Film ◽  
Subthreshold Swing ◽  
Current Ratio

Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD

2003 ◽  
Vol 769 ◽  
Author(s):  
Lihong Teng ◽  
Wayne A. Anderson
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Silicon Films ◽  
Subthreshold Swing ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Saturation Field ◽  
Plastic Substrates

AbstractThe properties of thin film transistors (TFT's) on plastic substrates with active silicon films deposited by microwave ECR-CVD were studied. Two types of plastic were used, PEEK and polyimide. The a-Si:H TFT deposited at 200°C on polyimide substrates showed a saturation field effect mobility of 4.5 cm2/V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/dec and an ON/OFF current ratio of 7.9×106, while the TFT fabricated on PEEK at 200°C showed a saturation field effect mobility of 3.9 cm2/V-s, a threshold voltage of 4.1 V, a subthreshold swing of 0.73 V/dec and an ON/OFF current ratio of 4×106. Comparison is made to TFT's with the Si deposited at 400°C on glass.

scholarly journals Tuning the Electrical Parameters of p-NiOx-Based Thin Film Transistors (TFTs) by Pulsed Laser Irradiation

2021 ◽  
Vol 6 (2) ◽  
pp. 21
Author(s):  
Poreddy Manojreddy ◽  
Srikanth Itapu ◽  
Jammalamadaka Krishna Ravali ◽  
Selvendran Sakkarai
Keyword(s):  
Thin Film ◽  
Laser Irradiation ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Laser Pulses ◽  
Subthreshold Swing ◽  
Electrical Performance ◽  
Current Ratio ◽  
Sio2 Thin Film ◽  
Output Characteristics

We utilized laser irradiation as a potential technique in tuning the electrical performance of NiOx/SiO2 thin film transistors (TFTs). By optimizing the laser fluence and the number of laser pulses, the TFT performance was evaluated in terms of mobility, threshold voltage, on/off current ratio and subthreshold swing, all of which were derived from the transfer and output characteristics. The 500 laser pulses-irradiated NiOx/SiO2 TFT exhibited an enhanced mobility of 3 cm2/V-s from a value of 1.25 cm2/V-s for as-deposited NiOx/SiO2 TFT, subthreshold swing of 0.65 V/decade, on/off current ratio of 6.5 × 104 and threshold voltage of −12.2 V. The concentration of defect gap states as a result of light absorption processes explains the enhanced performance of laser-irradiated NiOx. Additionally, laser irradiation results in complex thermal and photo thermal changes, thus resulting in an enhanced electrical performance of the p-type NiOx/SiO2 TFT structure.

Characteristics of Self-Aligned Si/Ge T-Gate Poly-Si Thin-Film Transistors With High on/off Current Ratio

2007 ◽  
Vol 54 (5) ◽  
pp. 1171-1176 ◽  
Author(s):  
Po-Yi Kuo ◽  
Tien-Sheng Chao ◽  
Pei-Shan Hsieh ◽  
Tan-Fu Lei
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Current Ratio ◽  
Si Thin Film

scholarly journals Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 137 ◽  
Author(s):  
Seung-Hun Lee ◽  
Kihwan Kwon ◽  
Kwanoh Kim ◽  
Jae Sung Yoon ◽  
Doo-Sun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Electronic Devices ◽  
Optical Transmittance ◽  
Plastic Substrate ◽  
Current Ratio ◽  
Vacancy Defects ◽  
Potential Applications

The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec−1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

scholarly journals Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Sheng-Po Chang ◽  
San-Syong Shih
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Excellent Performance ◽  
Current Ratio ◽  
Indium Zinc Oxide ◽  
Sputtering Power

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO) thin film transistors (TFTs). Co-sputtering-processedα-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition ofα-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE), carrier concentration, and subthreshold swing (S) of the device. Our results indicated that we could successfully and easily fabricateα-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processedα-HfIZO TFTs were fabricated with an on/off current ratio of~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

Current Density Enhancement at Active Layer Edges in Polycrystalline Silicon Thin-Film Transistors

2001 ◽  
Vol 40 (Part 2, No. 1A/B) ◽  
pp. L26-L28 ◽  
Author(s):  
Mutsumi Kimura ◽  
Ryoichi Nozawa ◽  
Satoshi Inoue ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Current Density ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Density Enhancement

Instability of OTFT with Organic Gate Dielectrics

2007 ◽  
Vol 124-126 ◽  
pp. 407-410
Author(s):  
Sang Chul Lim ◽  
Seong Hyun Kim ◽  
Gi Heon Kim ◽  
Jae Bon Koo ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Gate Insulator ◽  
Semiconductor Layer ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Dielectric Thickness ◽  
Inverter Circuit

We report the effects of instability with gate dielectrics of pentacene thin film transistors (OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V. The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit measurement, we observed hysteresis behavior was caused by interface states of between the gate insulator and the pentacene semiconductor layer.

Ambipolar Thin-Film Transistors Fabricated by PECVD Nanocrystalline Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Czang-Ho Lee ◽  
Andrei Sazonov ◽  
Mohammad R. E. Rad ◽  
G. Reza Chaji ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Nanocrystalline Silicon ◽  
Oxide Semiconductor ◽  
Hole Injection ◽  
Current Ratio

AbstractWe report on directly deposited plasma-enhanced chemical vapor deposition (PECVD) nanocrystalline silicon (nc-Si:H) ambipolar thin-film transistors (TFTs) fabricated at 260 °C. The ambipolar operation is achieved adopting Cr metal contacts with high-quality nc-Si:H channel layer, which creates highly conductive Cr silicided drain/source contacts, reducing both electron and hole injection barriers. The n-channel nc-Si:H TFTs show a field-effect electron mobility (meFE) of 150 cm2/Vs, threshold voltage (VT) ~ 2 V, subthreshold slope (S) ~0.3 V/dec, and ON/OFF current ratio of more than 107, while the p-channel nc-Si:H TFTs show a field-effect hole mobility (mhFE) of 26 cm2/Vs, VT ~ -3.8 V, S ~0.25 V/dec, and ON/OFF current ratio of more than 106. Complementary metal-oxide-semiconductor (CMOS) logic integrated with two ambipolar nc-Si:H TFTs shows reasonable transfer characteristics. The results presented here demonstrate that low-temperature nc-Si:H TFT technology is feasible for total integration of active-matrix TFT backplanes.

scholarly journals P3HT Nanofibrils Thin-Film Transistors by Adsorbing Deposition in Suspension

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3643 ◽  
Author(s):  
Shuichi Nagamatsu ◽  
Masataka Ishida ◽  
Shougo Miyajima ◽  
Shyam S. Pandey
Keyword(s):  
Thin Film ◽  
Conjugated Polymer ◽  
Thin Film Transistors ◽  
Preparation Method ◽  
Substrate Surface ◽  
Thin Film Transistor ◽  
Current Ratio ◽  
P3ht Film ◽  
Polymer Thin Film ◽  
Film Preparation

A novel film preparation method utilizing polymer suspension, entitled adsorbing deposition in suspensions (ADS), has been proposed. The poly(3-hexylthiophene) (P3HT) toluene solution forms P3HT nanofibrils dispersed suspension by aging. P3HT nanofibrils are highly crystallized with sharp vibronic absorption spectra. By the ADS method, only P3HT nanofibrils in suspension can be deposited on the substrate surface without any disordered fraction from the dissolved P3HT in suspension. Formed ADS film contains only the nanostructured conjugated polymer. Fabricated polymer thin-film transistor (TFT) utilizing ADS P3HT film shows good TFT performances with low off current, narrow subthreshold swing and large on/off current ratio.

Hydrogen in Ultralow Temperature SiO2for Nanocrystalline Silicon Thin Film Transistors

2004 ◽  
Vol 814 ◽  
Author(s):  
Alex Kattamis ◽  
I-Chun Cheng ◽  
Steve Allen ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Current Density ◽  
Thin Film Transistors ◽  
Secondary Ion Mass Spectrometry ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Film Deposition ◽  
Silicon Thin Film

AbstractNanocrystalline silicon is a candidate material for fabricating thin film transistors with high carrier mobilities on plastic substrates. A major issue in the processing of nanocrystalline silicon thin film transistors (nc-Si:H TFTs) at ultralow temperatures is the quality of the SiO2gate dielectric. SiO2deposited at less than 250°C by radio frequency plasma enhanced chemical vapor deposition (rf-PECVD), and not annealed at high temperature after deposition, exhibits high leakage current and voltage shifts when incorporated into TFT's. Secondary ion mass spectrometry (SIMS) measurements show that the hydrogen concentration (NH) in PECVD oxide deposited at 150°C on crystalline silicon (x-Si) is ∼ 0.8 at. %. This is much higher than in thermal oxides on x-Si, which display concentrations of less than 0.003 at. %. The leakage current density for thermal oxides on x-Si at a bias of 10 V is ∼9×10−6A/cm2whereas for 200°C PECVD oxides on nc-Si:H the current is ∼1×10−4A/cm2. As the temperature of the SiO2deposition is reduced to 150°C the current density rises by up to two orders of magnitude more. The H which is suspected to cause the leakage current across the PECVD oxide originates from the nc-Si:H substrate and the SiH4source gas. We analyzed the 300-nm gate oxide in capacitor structures of Al / SiO2/n+nc-Si:H / Cr / glass, Al / SiO2/ n+nc-Si:H / x-Si, and Al / SiO2/ x-Si. Vacuum annealing the nc-Si:H prior to PECVD of the oxide drives H out of the nc-Si:H film and reduces the amount of H incorporated into the oxide that is deposited on top. SiO2film deposition from SiH4and N2O at high He dilution has a still greater effect on lowering NH. The leakage current at a 10 V bias dropped from ∼1×10−4A/cm2to about ∼2×10−6A/cm2using He dilution at 250°C, and the vacuum anneal of the nc-Si:H lowered it by an additional factor of two. Thus we observe that both the nc-Si:H anneal and the SiO2deposition at high He dilution lessen the gate leakage current.

Sign in / Sign up

Export Citation Format

Share Document