Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment

2020 ◽  
Vol 41 (4) ◽  
pp. 529-532 ◽  
Author(s):  
Dun-Bao Ruan ◽  
Kuei-Shu Chang-Liao ◽  
Shih-Han Yi ◽  
Hsin-I Yeh ◽  
Guan-Ting Liu
Keyword(s):  
Plasma Treatment ◽  
Leakage Current ◽  
Oxidation State ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Low Oxidation State ◽  
Mos Device

The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics

2013 ◽  
Vol 699 ◽  
pp. 422-425 ◽  
Author(s):  
K.C. Lin ◽  
C.H. Chou ◽  
J.Y. Chen ◽  
C.J. Li ◽  
J.Y. Huang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Property ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Gate Dielectrics ◽  
Bottom Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
High K

In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y2O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

2011 ◽  
Vol 88 (7) ◽  
pp. 1309-1311 ◽  
Author(s):  
C.H. Fu ◽  
K.S. Chang-Liao ◽  
Y.A. Chang ◽  
Y.Y. Hsu ◽  
T.H. Tzeng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
Equivalent Oxide Thickness ◽  
Gate Leakage ◽  
High K ◽  
High K Gate Dielectric

LaAlO3 gate dielectric with ultrathin equivalent oxide thickness and ultralow leakage current directly deposited on Si substrate

2008 ◽  
Vol 103 (3) ◽  
pp. 034118 ◽  
Author(s):  
Masamichi Suzuki ◽  
Takeshi Yamaguchi ◽  
Noburu Fukushima ◽  
Masato Koyama
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Si Substrate

Improved Device Characteristics Obtained Using a Novel High-K Dielectric Stack for 4H-SiC n-IGBT: HfO2-SiO2- AlN

2019 ◽  
Vol 963 ◽  
pp. 647-650 ◽  
Author(s):  
Siva Kotamraju ◽  
Pavan Vudumula
Keyword(s):  
Oxide Thickness ◽  
Band Offset ◽  
Static Characteristics ◽  
Equivalent Oxide Thickness ◽  
Subthreshold Current ◽  
High K ◽  
Inductive Circuit ◽  
Novel Method ◽  
High K Dielectric ◽  
Mos Device

We report on a novel method of stacking multiple oxide layers on 4H-SiC 20 kV IGBT. Instead of SiO2/SiC interface which is common for any SiC based MOS device, we found that the AlN/SiC interface would yield better results. We have performed 2D numerical simulations to analyze static characteristics for three combinations of dielectric stacks on IGBT: HfO2-SiO2, HfO2-AlN, and HfO2-SiO2-AlN (by maintaining the same equivalent oxide thickness value). In addition to higher transconductance (gm) and lower subthreshold swing (SS), the device with AlN/SiC interface offer comparatively lower RSP,ON and higher mobility with respect to temperature. Nevertheless, with a partial compromise on device characteristics improvement, insertion of SiO2 in the dielectric stack helps in suppressing the subthreshold current owing to higher band offset with respect to SiC. The turn off characteristics of the device is analysed using a clamped inductive circuit. Device with AlN/SiC has shown better dIc/dt and fall time compared to SiO2/SiC interface.

High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

2011 ◽  
Vol 55 (1) ◽  
pp. 64-67 ◽  
Author(s):  
W.B. Chen ◽  
C.H. Cheng ◽  
C.W. Lin ◽  
P.C. Chen ◽  
Albert Chin
Keyword(s):  
High Field ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Metal Gate ◽  
Field Mobility

Valence variation of phase-pure M1 MoVNbTe oxide by plasma treatment for improved catalytic performance in oxidative dehydrogenation of ethane

RSC Advances ◽  
2015 ◽  
Vol 5 (111) ◽  
pp. 91295-91301 ◽  
Author(s):  
Xin Chen ◽  
Qianli Yang ◽  
Bozhao Chu ◽  
Hang An ◽  
Yi Cheng
Keyword(s):  
Surface Modification ◽  
Metal Oxide ◽  
Plasma Treatment ◽  
Oxidative Dehydrogenation ◽  
Oxidation State ◽  
Active Sites ◽  
Oxygen Plasma ◽  
Catalyst Surface ◽  
Catalytic Performance ◽  
Phase Pure

This work presents a new method of catalyst surface modification by using oxygen plasma to change the oxidation state of active sites in metal oxide catalysts.

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