Low Gate Leakage Current and Interface State Density of Atomic Layer Deposition Al2O3 SiC MOS Device with NH3 Plasma Treatment

Abstract We investigated the effect of interface state density on the field-effect mobility (μ FE) of 4H-SiC counter-doped MOSFETs. We fabricated counter-doped MOSFETs with three types of gate oxides i.e., SiO2, Al2O3 formed via atomic layer deposition, and Al2O3 formed via metal layer oxidation (MLO). A maximum μ FE of 80 cm2/Vs was obtained for the MLO-Al2O3 FET, and this value was 60% larger than that of the SiO2 FET. In addition, we evaluated the electron mobility in the neutral channel (μ neutral) and the rate of increase in the free electron density in the neutral channel with respect to the gate voltage (dN neutral/dV G), which are factors determining μ FE. μ neutral depended only on the channel depth, independent of the type of gate oxide. In addition, dN neutral/dV G was significantly low in the SiO2 FET because of carrier trapping at the high density of interface states, whereas this effect was smaller in the Al2O3 FETs.

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Low interface state density and low leakage current of atomic-layer deposited TiO2/Al2O3/sulfur-treated GaAs

physica status solidi (a) ◽

10.1002/pssa.201228093 ◽

2012 ◽

Vol 209 (11) ◽

pp. 2147-2150 ◽

Cited By ~ 7

Author(s):

Ming-Kwei Lee ◽

Chih-Feng Yen

Keyword(s):

Leakage Current ◽

Atomic Layer ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Low Leakage ◽

Low Leakage Current

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Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

10.20944/preprints201803.0125.v1 ◽

2018 ◽

Author(s):

Nuriye Kaymak ◽

Esra Efil ◽

Elanur Seven ◽

Adem Tataroğlu ◽

Sema Bilge Ocak ◽

...

Keyword(s):

Zinc Oxide ◽

Atomic Layer Deposition ◽

Schottky Barrier ◽

Barrier Height ◽

Thermionic Emission ◽

Atomic Layer ◽

Interface State ◽

State Density ◽

Layer Deposition ◽

P Type

We report on the fabrication and electrical characteristics of zinc-oxide (ZnO) based metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBHs). ZnO thin layer on the p-type silicon substrate was fabricated by atomic layer deposition (ALD). The structure and surface properties of the thin film were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and secondary ion mass spectrometer (SIMS). The current-voltage (I-V) characteristics of Al/ALD-grown ZnO/p-Si diodes were measured under dark at room temperature. The electrical parameters such as ideality factor (n), series resistance (Rs) and barrier height (ϕb) of the diodes were analyzed using standard thermionic emission (TE) theory, Norde and Cheung method. The barrier height value obtained from I-V and Cheung method was found to be 0.73 eV and 0.76 eV, respectively. The interface state density (Dit) of the diodes was determined from the I-V characteristics. The nonideal behavior of measured parameters suggested the presence of interface states. The obtained results showed that the prepared diode can be used for NIR Schottky photodetector applications.

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Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

MRS Proceedings ◽

10.1557/proc-685-d13.3.1 ◽

2001 ◽

Vol 685 ◽

Author(s):

Won-Jae Lee ◽

Chang-Ho Shin ◽

In-Kyu You ◽

Il-Suk Yang ◽

Sang-Ouk Ryu ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Atomic Layer Deposition ◽

Leakage Current ◽

Annealing Temperature ◽

Atomic Layer ◽

Si Substrates ◽

Annealing Temperatures ◽

Layer Deposition ◽

Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

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Interface State Density of Atomic Layer Deposited Al2O3onβ-Ga2O3

ECS Transactions ◽

10.1149/08507.0027ecst ◽

2018 ◽

Vol 85 (7) ◽

pp. 27-30 ◽

Cited By ~ 1

Author(s):

Chen Yi Su ◽

Takuya Hoshii ◽

Iriya Muneta ◽

Hitoshi Wakabayashi ◽

Kazuo Tsutsui ◽

...

Keyword(s):

Atomic Layer ◽

Interface State ◽

State Density ◽

Interface State Density

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Characterization of Wet Chemical Atomic Layer Etching of InGaAs

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.314.95 ◽

2021 ◽

Vol 314 ◽

pp. 95-98

Author(s):

Tomoki Hirano ◽

Kenya Nishio ◽

Takashi Fukatani ◽

Suguru Saito ◽

Yoshiya Hagimoto ◽

...

Keyword(s):

Surface Condition ◽

Atomic Layer ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Etching Process ◽

Wet Chemical ◽

Oxide Removal ◽

Atomic Layer Etching

In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H2O2 was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl and NH4OH solutions. Less In oxide tended to remain after the HCl treatment than after the NH4OH treatment, so the combination of H2O2 and HCl is suitable for wet chemical atomic layer etching. In addition, we found that repetition of this etching process does not impact on the oxide amount, surface roughness, and interface state density. Thus, nanoscale etching of InGaAs with no impact on the surface condition is possible with this method.

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