Ultra-Low Power, Emission Gate Driver with Pulse Width Modulation Using Low-Temperature Poly-Si Oxide Thin-Film Transistors

2021 ◽  
pp. 1-1
Author(s):  
Junyeong Kim ◽  
Mohammad Masum Billah ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Low Power ◽  
Thin Film Transistors ◽  
Pulse Width ◽  
Pulse Width Modulation ◽  
Oxide Thin Film ◽  
Ultra Low Power ◽  
Gate Driver

New Low-power Gate Driver Circuit Integrated by Metal Oxide Thin Film Transistors

2020 ◽  
Vol 41 (1) ◽  
pp. 103-109
Author(s):  
林奕圳 LIN Yi-zhen ◽  
胡宇峰 HU Yu-feng ◽  
周 雷 ZHOU Lei ◽  
吴为敬 WU Wei-jing ◽  
邹建华 ZOU Jian-hua ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Low Power ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Driver Circuit ◽  
Metal Oxide Thin Film ◽  
Gate Driver

scholarly journals A Low-Power Memory-in-Pixel Circuit for Liquid Crystal Displays Comprising Low-Temperature Poly-Silicon and Oxide Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1958
Author(s):  
Jongbin Kim ◽  
Woo-Rim Lee ◽  
Hoon-Ju Chung ◽  
Seung-Woo Lee
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Low Temperature ◽  
Power Consumption ◽  
Low Power ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Liquid Crystal Displays ◽  
Oxide Thin Film ◽  
Measurement Results

In this paper, a new pixel structure using low-temperature polycrystalline silicon and oxide (LTPO) thin-film transistors (TFTs) for low-power liquid crystal displays (LCDs) is proposed. The extremely low off-state current of oxide semiconductor TFTs enables the proposed circuit to operate at a very low frame frequency of 1/60 Hz, so that the power consumption can be significantly reduced. In addition, the low-temperature polycrystalline silicon TFTs with high reliability directly drive pixels, which can achieve stable and flicker-free LCDs. The proposed circuit is fabricated using the LTPO TFT backplane and successfully verified by simulation and measurement results. The measurement results prove that the proposed circuit operates well without further programming for 60 s, and the power consumption in the panel (except backlight power) can be reduced to 0.02% of that of conventional LCD.

scholarly journals Zinc Oxide Thin-Film Transistors Fabricated at Low Temperature by Chemical Spray Pyrolysis

2014 ◽  
Vol 43 (11) ◽  
pp. 4241-4245 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Yong Uk Lee ◽  
Lee Winchester ◽  
Jaeeun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Spray Pyrolysis ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Chemical Spray Pyrolysis ◽  
Zinc Oxide Thin Film ◽  
Chemical Spray
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