Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

scholarly journals Achieving Good Protection on Ultra-High Molecular Weight Polythene by In Situ Growth of Amorphous Carbon Film

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 584
Author(s):  
Rui Dang ◽  
Liqiu Ma ◽  
Shengguo Zhou ◽  
Deng Pan ◽  
Bin Xia
Keyword(s):  
Molecular Weight ◽  
Epitaxial Growth ◽  
High Molecular Weight ◽  
Amorphous Carbon ◽  
Transition Layer ◽  
In Situ Growth ◽  
Good Protection ◽  
Ultra High Molecular Weight ◽  
Carbon Plasma

Ultra-high molecular weight polythene (UHMWPE), with outstanding characteristics, is widely applied in modern industry, while it is also severely limited by its inherent shortcomings, which include low hardness, poor wear resistance, and easy wear. Implementation of feasible protection on ultra-high molecular weight polythene to overcome its shortcomings would be of significance. In the present study, amorphous carbon (a-C) film was fabricated on ultra-high molecular weight polythene (UHMWPE) to provide good protection, and the relevant growth mechanism of a-C film was revealed by controlling carbon plasma currents. The results showed the in situ transition layer, in the form of chemical bonds, was formed between the UHMWPE substrate and the a-C film with the introduction of carbon plasma, which provided strong adhesion, and then the a-C film continued epitaxial growth on the in situ transition layer with the treatment of carbon plasma. This in situ growth of a-C film, including the in situ transition layer and the epitaxial growth layer, significantly improved the wetting properties, mechanical properties, and tribological properties of UHMWPE. In particular, good protection by in situ growth a-C film on UHMWPE was achieved during sliding wear.

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 271-276 ◽  
Author(s):  
Robert E. Stahlbush ◽  
Rachael L. Myers-Ward ◽  
Brenda L. VanMil ◽  
D. Kurt Gaskill ◽  
Charles R. Eddy
Keyword(s):  
Epitaxial Growth ◽  
Basal Plane ◽  
Reduction Process ◽  
Epitaxial Layers ◽  
In Situ Growth ◽  
Half Loop ◽  
Insight Into

The recently developed technique of UVPL imaging has been used to track the path of basal plane dislocations (BPDs) in SiC epitaxial layers. The glide of BPDs during epitaxial growth has been observed and the role of this glide in forming half-loop arrays has been examined. The ability to track the path of BPDs through the epitaxy has made it possible to develop a BPD reduction process for epitaxy grown on 8° offcut wafers, which uses an in situ growth interrupt and has achieved a BPD reduction of > 98%. The images also provide insight into the strong BPD reduction that typically occurs in epitaxy grown on 4° offcut wafers.

In situ electron microscope studies on epitaxial growth of thin metal films on metal substrates

1976 ◽  
Vol 32 (2) ◽  
pp. 185-190 ◽  
Author(s):  
K. Yagi ◽  
K. Takayanagi ◽  
K. Kobayashi ◽  
G. Honjo
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Metal Substrates

An Adaptive Elasticity Policy For Staging Based In-Situ Processing

2021 ◽  
Author(s):  
Zhe Wang ◽  
Matthieu Dorier ◽  
Pradeep Subedi ◽  
Philip E. Davis ◽  
Manish Parashar
Keyword(s):  
In Situ Processing ◽  
Adaptive Elasticity
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