High-power modified uni-traveling carrier photodiode with ≫ 50 dBm third order intercept point

2008 ◽  
Author(s):  
Andreas Beling ◽  
Huapu Pan ◽  
Hao Chen ◽  
Joe C. Campbell
Keyword(s):  
High Power ◽  
Third Order ◽  
Intercept Point

Can Mixer IP3 be Infinitely High?

2016 ◽  
Vol 25 (12) ◽  
pp. 1650150 ◽  
Author(s):  
J. Ladvánszky ◽  
B. Dortschy
Keyword(s):  
Input Power ◽  
Third Order ◽  
Input Level ◽  
Intercept Point

We show a mixer circuit that exhibits infinitely high third-order intercept point (IP3) over a range of RF input levels. It follows from this fact that IP3 is not adequate for characterizing mixers. The formula for calculating IP3 from fundamental- and third-order intermodulation products at a single RF input level is not valid for the mentioned mixer over an RF input power range. Instead of IP3, we suggest a replacement.

scholarly journals Low Power Upconversion Mixer for Medical Remote Sensing

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
De Xing Lioe ◽  
Suhaidi Shafie ◽  
Harikrishnan Ramiah ◽  
Gim Heng Tan
Keyword(s):  
Remote Sensing ◽  
Low Power ◽  
Supply Voltage ◽  
Third Order ◽  
Ism Band ◽  
Current Consumption ◽  
Intercept Point ◽  
A Current

This work presents the design of a low power upconversion mixer adapted in medical remote sensing such as wireless endoscopy application. The proposed upconversion mixer operates in ISM band of 433 MHz. With the carrier power of −5 dBm, the proposed mixer has an output inferred 1 dB compression point of −0.5 dBm with a corresponding output third-order intercept point (OIP3) of 7.1 dBm. The design of the upconversion mixer is realized on CMOS 0.13 μm platform, with a current consumption of 594 μA at supply voltage headroom of 1.2 V.

scholarly journals Design of the Low Noise Amplifier Circuit in Band L for Improve the Gain and Circuit Stability

2018 ◽  
Vol 1 (4) ◽  
Author(s):  
Arash Omidi ◽  
Rohalah Karami ◽  
Parisa Sadat Emadi ◽  
Hamed Moradi
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
System Stability ◽  
Third Order ◽  
Cmos Transistor ◽  
Cmos Lna ◽  
Noise Amplifier ◽  
The Cost ◽  
Intercept Point

In this paper, focuses on the design of Low Noise Amplifier circuitry in the frequency band L. This circuit is designed using the 0.18 nm CMOS transistor technology, which consists of two transistor Stage. The purpose of this research is to improve the cost of: Increase Gain - Increase circuit linearization - Create an integrative matching network for system stability. The application of this circuit can be used in wireless and GPS systems. The CMOS LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB from 1.2 to 2.4 GHz. At 1.575 GHz, the 1-dB compression point (P1dB) is 1.73 dBm, with an input third-order intercept point (IIP3) of -3.98 dBm. This circuit is designed using ADS software.

scholarly journals High gain and Low power Up conversion Mixer for Wireless LAN Applications

2019 ◽  
pp. 179-185
Author(s):  
Ananda M ◽  
A B Kalpana
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Wireless Lan ◽  
Intermediate Frequency ◽  
Local Oscillator ◽  
High Gain ◽  
Conversion Gain ◽  
Third Order ◽  
Voltage Conversion ◽  
Intercept Point

This work aims an efficient RF Up-Conversion Mixer at Intermediate frequency of 100MHz and Local oscillator frequency of 2.3GHz. The proposed RF Up-Conversion Mixer exhibited better performance in terms of parameter like conversion gain and power consumption. The Simulation of Up-Conversion Mixer shows that the results of voltage conversion gain with LO power at 0dB is 5dB, at 5dB is 4.9dB, and at 10dB is 4.7dB. The power consumption of proposed design is 6mW. The 1dB compression point is -5.43dBm and third order intercept point is 10.53dBm.

A High Linearity Folded Gilbert Mixer for 2.4GHz Application

2011 ◽  
Vol 130-134 ◽  
pp. 3267-3271
Author(s):  
Kang Li ◽  
Chao Xian Zhu ◽  
Xiao Feng Yang ◽  
Qian Feng ◽  
Chi Liu ◽  
...  
Keyword(s):  
Superposition Method ◽  
Current Steering ◽  
Third Order ◽  
High Linearity ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Simulation Results ◽  
Lc Tank ◽  
Is Design ◽  
Intercept Point

A 2.4GHz high linearity downconversion mixer is designed with MOSFET transconductance linearization technique. Multiple gated transistors (MGTR) (or derivative superposition) method is adopted in the structure to increase IIP3 of the mixer as well as its convertion gain isn’t degraded. In order to improve the performance of the mixer further, a LC tank is used in the LO stage and two current steering PMOS transistors in load stage. The Mixer is design in TSMC 0.35um SiGe BiCMOS technology. Simulation results show that the mixer achieves 2.88dBm input 1dB compress point, 16.18dBm third-order input intercept point (IIP3) and the conversion gain is 12.97dB.

Measurement of Ultrashort High-Power Laser Pulse with Third Order Correlation Technique

2012 ◽  
Vol 39 (12) ◽  
pp. 1208002
Author(s):  
王宇煜 Wang Yuyu ◽  
欧阳小平 Ouyang Xiaoping ◽  
杨琳 Yang Lin ◽  
唐清 Tang Qing ◽  
潘雪 Pan Xue ◽  
...  
Keyword(s):  
Laser Pulse ◽  
High Power ◽  
Correlation Technique ◽  
High Power Laser ◽  
Power Laser ◽  
Third Order ◽  
High Power Laser Pulse

scholarly journals Overlapped Gate-Source/Drain H-shaped TFET: Proposal, Design and Linearity Analysis

2021 ◽  
Author(s):  
Utkarsh Upadhyay ◽  
Ashish Raman ◽  
RAVI RANJAN ◽  
Naveen Kumar
Keyword(s):  
Potential Energy ◽  
Electric Potential ◽  
Tunneling Current ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Third Order ◽  
Band To Band Tunneling ◽  
Non Local ◽  
Intermodulation Distortions ◽  
Intercept Point

Abstract In this paper, the proposed design of H-shaped TFET has been discussed. This design is providing a high Ion/Ioff ratio with better Ion. HfO2 is used for better tunneling current. With this device, Different parameters such as unit parameter, analogue parameter, and linearity parameter have been studied and investigated the output of the H-TFET. As unit parameters, the electric field, electric potential, energy band diagram, and non-local band-to-band tunneling rate (BTBT) have all been observed. Second and third-order harmonics distortion (HD2, HD3), third-order current intercept point (IIP3), third-order intermodulation distortions (IMD3), and second and third-order voltage intercept point (VIP2, VIP3) are evaluated as linearity parameters that characterize the device's distortions and linearity. We obtained Ion\({\text{=1.6×}10}^{-4}\) A/µm, Ioff=2.1\({\text{×}10}^{-19}\) A/µm, Ion /Ioff=7.6\({\text{×}10}^{14}\),threshold voltage Vt=0.3449 V. © 2017 Elsevier Inc. All rights reserved.

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