Simulation Analysis of a Composite Simulator for the Source-region Electromagnetic Pulse Environment

2020 ◽  
Author(s):  
Liuhong Huang ◽  
Jiuliang Xiong ◽  
Cui Meng ◽  
Zheng Pan ◽  
Jie Yang ◽  
...  
Keyword(s):  
Electromagnetic Pulse ◽  
Simulation Analysis ◽  
Source Region

scholarly journals Design, Modeling & Simulation of Analysis of coupling to Cables due to Electromagnetic Pulse (EMP)

2019 ◽  
Vol 8 (9) ◽  
pp. 78-85
Keyword(s):  
Rise Time ◽  
Pulse Width ◽  
Electromagnetic Pulse ◽  
Simulation Analysis ◽  
Coaxial Cable ◽  
Induced Voltage ◽  
Modeling Simulation ◽  
Active Line ◽  
3D Em ◽  
Peak Electric Field

This paper is to analyze the EMP coupling to cables using 3D EM Modeling and Simulation Analysis. Bounded wave transmission line structure as per MIL-STD 461, RS105 EMP requirement in terms of peak electric field of 50KV/m with rise time-2.3ns and pulse width-25ns was developed. Single conductor cable, RF Coaxial cable were modeled. EMP Coupling to cables was carried out by placing the cable under generated EMP field in terms of induced voltage and currents due to EMP fields. EMP coupling to active line with matched termination also analyzed.

scholarly journals Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1895
Author(s):  
Jinhee Cheon ◽  
Kwangsoo Kim
Keyword(s):  
High Frequency ◽  
Power Loss ◽  
Figure Of Merit ◽  
Simulation Analysis ◽  
Source Region ◽  
Switching Speed ◽  
Reverse Transfer ◽  
Input Capacitance ◽  
Tcad Simulation ◽  
Switching Characteristics

In this paper, we compare the static and switching characteristics of the 4H-SiC conventional UMOSFET (C-UMOSFET), double trench MOSFET (DT-MOSFET) and source trench MOSFET (ST-MOSFET) through TCAD simulation. In particular, the effect of the trenched source region and the gate trench bottom P+ shielding region on the capacitance is analyzed, and the dynamic characteristics of the three structures are compared. The input capacitance is almost identical in all three structures. On the other hand, the reverse transfer capacitance of DT-MOSFET and ST-MOSFET is reduced by 44% and 24%, respectively, compared to C-UMOSFET. Since the reverse transfer capacitance of DT-MOSFET and ST-MOSFET is superior to that of C-UMOSFET, it improves high frequency figure of merit (HF-FOM: RON-SP × QGD). The HF-FOM of DT-MOSFET and ST-MOSFET is 289 mΩ∙nC, 224 mΩ∙nC, respectively, which is improved by 26% and 42% compared to C-UMOSFET. The switching speed of DT-MOSFET and ST-MOSFET are maintained at the same level as the C-UMOSFET. The switching energy loss and power loss of the DT-MOSFET and ST-MOSFET are slightly improved compared to C-UMOSFET.

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
High Throughput Screening ◽  
Simulation Analysis ◽  
Low Cost ◽  
Deposition Process ◽  
Large Area ◽  
Sidewall Roughness ◽  
Sensing Applications ◽  
Fabrication Defects ◽  
The Impact

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.

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