Surface activation of rigid and flexible substrates for thin film photovoltaics using atmospheric pressure plasma

2016 ◽  
Author(s):  
F. Lisco ◽  
A. Shaw ◽  
A. Wright ◽  
F. Iza ◽  
J.M. Walls
Keyword(s):  
Thin Film ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Flexible Substrates ◽  
Surface Activation ◽  
Pressure Plasma ◽  
Thin Film Photovoltaics

scholarly journals Surface modification of PVA thin film by nonthermal atmospheric pressure plasma for antifogging property

AIP Advances ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 075008
Author(s):  
Ramhari Paneru ◽  
Pradeep Lamichhane ◽  
Bishwa Chandra Adhikari ◽  
Se Hoon Ki ◽  
Jinsung Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Modification ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Pressure Plasma

Investigation of LaAlO 3 /ZrO 2 / a ‐InGaZnO thin‐film transistors using atmospheric pressure plasma jet

2014 ◽  
Vol 50 (9) ◽  
pp. 706-708 ◽  
Author(s):  
Chien‐Hung Wu ◽  
Hau‐Yuan Huang ◽  
Shui‐Jinn Wang ◽  
Kow‐Ming Chang ◽  
Hsin‐Yu Hsu
Keyword(s):  
Thin Film ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Atmospheric Pressure Plasma ◽  
Plasma Jet ◽  
Atmospheric Pressure Plasma Jet ◽  
Pressure Plasma

Improved GZO Thin Film Properties with SiOx Buffer Layer by Atmospheric Pressure Plasma Deposition

2014 ◽  
Vol 625 ◽  
pp. 196-200
Author(s):  
Kuo Hui Yang ◽  
Po Ching Ho ◽  
Je Wei Lin ◽  
Ta Hsin Chou ◽  
Kow Ming Chang
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Atmospheric Pressure ◽  
Plasma Deposition ◽  
Atmospheric Pressure Plasma ◽  
Deposition Process ◽  
Good Alternative ◽  
Pressure Plasma ◽  
Electro Optic ◽  
Single Jet

The Ga-doped zinc-oxides (GZO) as the transparency conductive oxide is the good candidate for substituting ITO. The buffer layer SiOx could improve the quality of GZO thin film. The atmospheric pressure plasma multi-jets (APPMJ) system with three jets was designed and applied for SiOx deposition process. The deposition thickness of three jets was 2.5 times higher than that of single jet, and the uniformity was less than 5% for the area 100mm2. GZO thin film with SiOx buffer layer had 3% decreases in resistivity compared to GZO thin film due to the increasing of mobility. The SiOx/glass fabricated APPMJ system will be a good alternative substrate to bare glass for producing high quality GZO film for advanced electro-optic applications.

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