Non-Thermal Atmospheric Pressure Plasma Etching of F:SnO2 for Thin Film Photovoltaics

2011 ◽  
Vol 11 (9) ◽  
pp. 8403-8407 ◽  
Author(s):  
J. L. Hodgkinson ◽  
M. Thomson ◽  
I. Cook ◽  
D. W. Sheel
Keyword(s):  
Thin Film ◽  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Pressure Plasma ◽  
Thin Film Photovoltaics

scholarly journals Surface modification of PVA thin film by nonthermal atmospheric pressure plasma for antifogging property

AIP Advances ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 075008
Author(s):  
Ramhari Paneru ◽  
Pradeep Lamichhane ◽  
Bishwa Chandra Adhikari ◽  
Se Hoon Ki ◽  
Jinsung Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Modification ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Pressure Plasma

Dicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma Confinement

2014 ◽  
Vol 778-780 ◽  
pp. 759-762 ◽  
Author(s):  
Yasuhisa Sano ◽  
Hiroaki Nishikawa ◽  
Yuu Okada ◽  
Kazuya Yamamura ◽  
Satoshi Matsuyama ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Removal Rate ◽  
Atmospheric Pressure Plasma ◽  
Etching Process ◽  
Plasma Confinement ◽  
Plasma Etching Process ◽  
Pressure Plasma ◽  
High Removal Rate ◽  
Sic Wafer

Silicon carbide (SiC) is a promising semiconductor material for high-temperature, high-frequency, high-power, and energy-saving applications. However, because of the hardness and chemical stability of SiC, few conventional machining methods can handle this material efficiently. A plasma chemical vaporization machining (PCVM) technique is an atmospheric-pressure plasma etching process. We previously proposed a novel style of PCVM dicing using slit apertures for plasma confinement, which in principle can achieve both a high removal rate and small kerf loss, and demonstration experiments were performed using a silicon wafer as a sample. In this research, some basic experiments were performed using 4H-SiC wafer as a sample, and a maximum removal rate of approximately 10 μm/min and a narrowest groove width of 25 μm were achieved. We also found that argon can be used for plasma generation instead of expensive helium gas.

Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF6-added plasma etching of quartz glass

2019 ◽  
Vol 125 (6) ◽  
pp. 063304 ◽  
Author(s):  
Thi-Thuy-Nga Nguyen ◽  
Minoru Sasaki ◽  
Hidefumi Odaka ◽  
Takayoshi Tsutsumi ◽  
Kenji Ishikawa ◽  
...  
Keyword(s):  
Quartz Glass ◽  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
High Density ◽  
Pressure Plasma

Investigation of LaAlO 3 /ZrO 2 / a ‐InGaZnO thin‐film transistors using atmospheric pressure plasma jet

2014 ◽  
Vol 50 (9) ◽  
pp. 706-708 ◽  
Author(s):  
Chien‐Hung Wu ◽  
Hau‐Yuan Huang ◽  
Shui‐Jinn Wang ◽  
Kow‐Ming Chang ◽  
Hsin‐Yu Hsu
Keyword(s):  
Thin Film ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Atmospheric Pressure Plasma ◽  
Plasma Jet ◽  
Atmospheric Pressure Plasma Jet ◽  
Pressure Plasma

Improved GZO Thin Film Properties with SiOx Buffer Layer by Atmospheric Pressure Plasma Deposition

2014 ◽  
Vol 625 ◽  
pp. 196-200
Author(s):  
Kuo Hui Yang ◽  
Po Ching Ho ◽  
Je Wei Lin ◽  
Ta Hsin Chou ◽  
Kow Ming Chang
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Atmospheric Pressure ◽  
Plasma Deposition ◽  
Atmospheric Pressure Plasma ◽  
Deposition Process ◽  
Good Alternative ◽  
Pressure Plasma ◽  
Electro Optic ◽  
Single Jet

The Ga-doped zinc-oxides (GZO) as the transparency conductive oxide is the good candidate for substituting ITO. The buffer layer SiOx could improve the quality of GZO thin film. The atmospheric pressure plasma multi-jets (APPMJ) system with three jets was designed and applied for SiOx deposition process. The deposition thickness of three jets was 2.5 times higher than that of single jet, and the uniformity was less than 5% for the area 100mm2. GZO thin film with SiOx buffer layer had 3% decreases in resistivity compared to GZO thin film due to the increasing of mobility. The SiOx/glass fabricated APPMJ system will be a good alternative substrate to bare glass for producing high quality GZO film for advanced electro-optic applications.

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