The silver contact and formation mechanism of the boron emitter and the current flow mechanism of the solar cell electrode

Author(s):  
Seunghyun Shin ◽  
Soohyun Bae ◽  
Sungeun Park ◽  
Yoonmook Kang ◽  
Hae-Seok Lee ◽  
...  
Author(s):  
M. Kasemann ◽  
L.M. Reindl ◽  
B. Michl ◽  
W. Warta ◽  
A. Schütt ◽  
...  

Abstract Conventional series resistance imaging methods require electrical contacts for current injection or extraction in order to generate lateral current flow in the solar cell. This paper presents a new method to generate lateral current flow in the solar cell without any electrical contacts. This reduces the sample handling complexity for inline application and allows for measurements on unfinished solar cell precursors.


2021 ◽  
Vol 113 ◽  
pp. 110814
Author(s):  
Mohammed Ezzeldien ◽  
Z.A. Alrowaili ◽  
M.F. Hasaneen

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Hossein Mahmoudi Chenari ◽  
Hassan Sedghi ◽  
Mohammad Talebian ◽  
Mir Maqsoud Golzan ◽  
Ali Hassanzadeh

It is well known that metal/Tin-dioxide/metal sandwich structures exhibit a field-assisted lowering of the potential barrier between donor-like center and the conduction band edge, known as the Poole-Frenkel effect. This behavior is indicated by a linear dependence of Iog  on , where is the current density, and is the applied voltage. In this study, the electrical properties of Cu/nano-SnO2/Cu sandwich structures were investigated through current-voltage measurements at room temperature. Also, an attempt to explore the governing current flow mechanism was tried. Our results indicate that noticeable feature appearing clearly in the current-voltage characterization is the Poole-Frenkel and space-charge-limited conduction mechanisms.


2009 ◽  
Vol 42 (22) ◽  
pp. 225108 ◽  
Author(s):  
T Serin ◽  
S Gürakar ◽  
N Serin ◽  
N Yıldırım ◽  
F Özyurt Kuş

2020 ◽  
Vol 510 ◽  
pp. 145420 ◽  
Author(s):  
Wonje Oh ◽  
Jisu Park ◽  
Chaehwan Jeong ◽  
Jinhong Park ◽  
Junsin Yi ◽  
...  

1995 ◽  
Vol 395 ◽  
Author(s):  
N.I. Kuznetsov ◽  
E.V. Kalinina ◽  
V.A. Soloviev ◽  
V.A. Dmitriev

ABSTRACTSchottky barriers were formed on p-GaN. p-GaN layers doped with Mg were grown by metalorganic chemical vapor deposition (MOCVD). 6H-SiC wafers were used as substrates. The barriers were made by vacuum thermal evaporation of Au. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the barriers were investigated. The concentration of the ionized acceptors in the p-layers was measured to be about ∼1017 cm−3. The barrier height was determined to be 2.48 eV by C - V measurements at room temperature. The forward current flow mechanism through the barriers is discussed.


2015 ◽  
Vol 10 (1) ◽  
pp. 2605-2609
Author(s):  
S. U. Atayeva ◽  
S. I. Mehdiyeva ◽  
A. I. Isayev ◽  
S. N. Qaribova

It is established that current passing through Al-Se95Te5<Sm>-Te structures is carried out by monopolar injection mechanism at participation of traps for holes. It is shown that the doping by samarium strongly influences on the current flow mechanism in the investigated structure due to changes in the energy spectrum of the local states.The local level parameters (concentration and energy state) controlling the electric charge transfer are defined with the use of existing theories of injection currents. 


2014 ◽  
Author(s):  
H. Cansizoglu ◽  
M. F. Cansizoglu ◽  
M. Yurukcu ◽  
W. J. Khudhayer ◽  
N. Kariuki ◽  
...  

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