Schottky Barriers on p-GaN
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ABSTRACTSchottky barriers were formed on p-GaN. p-GaN layers doped with Mg were grown by metalorganic chemical vapor deposition (MOCVD). 6H-SiC wafers were used as substrates. The barriers were made by vacuum thermal evaporation of Au. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the barriers were investigated. The concentration of the ionized acceptors in the p-layers was measured to be about ∼1017 cm−3. The barrier height was determined to be 2.48 eV by C - V measurements at room temperature. The forward current flow mechanism through the barriers is discussed.
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2021 ◽
2011 ◽
Vol 25
(04)
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pp. 531-542
2012 ◽
Vol 26
(31)
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pp. 1250137
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2009 ◽
Vol 79-82
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pp. 1317-1320
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2009 ◽
Vol 23
(26)
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pp. 5171-5177
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