Current collapse induced in AlGaN/GaN HEMTs by short-term DC bias stress

Author(s):  
J.A. Mittereder ◽  
S.C. Binari ◽  
P.B. Klein ◽  
J.A. Roussos ◽  
D.S. Katzer ◽  
...  
Author(s):  
J.A. Mittereder ◽  
S.C. Binari ◽  
P.B. Klein ◽  
J.A. Roussos ◽  
D.S. Katzer ◽  
...  

2013 ◽  
Vol 8 (2) ◽  
pp. 78-82
Author(s):  
B. Padmanabhan ◽  
D. Vasileska ◽  
S. M. Goodnick

Current collapse phenomenon that occurs in GaN HEMTs under a moderately large DC bias stress, poses serious problems for usage of GaN technology in high-power high-frequency applications from a reliability standpoint. Additional problem in these devices operated at high biases is the appearance of self-heating effects that degrade device characteristics and, as shown in this work further amplify the problem of current collapse by changing the device electrostatics.


2003 ◽  
Vol 50 (10) ◽  
pp. 2015-2020 ◽  
Author(s):  
T. Mizutani ◽  
Y. Ohno ◽  
M. Akita ◽  
S. Kishimoto ◽  
K. Maezawa

2002 ◽  
Vol 194 (2) ◽  
pp. 447-451 ◽  
Author(s):  
T. Mizutani ◽  
Y. Ohno ◽  
M. Akita ◽  
S. Kishimoto ◽  
K. Maezawa
Keyword(s):  

2006 ◽  
Vol 55 (7) ◽  
pp. 3622
Author(s):  
Hao Yue ◽  
Han Xin-Wei ◽  
Zhang Jin-Cheng ◽  
Zhang Jin-Feng

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