A Wireless Gauge Pressure Sensor with Enhanced Sensitivity Fabricated by Flexible PCB Technology For Intracranial Pressure Sensing

Author(s):  
Yi Chiu ◽  
You-Zen Chen ◽  
Chia-Chun Hsieh ◽  
Hao-Chiao Hong
2019 ◽  
Vol 139 (4) ◽  
pp. 63-68
Author(s):  
Hiroshi Nakano ◽  
Masahiro Matsumoto ◽  
Yasuo Onose ◽  
Kazuhiro Ohta

2013 ◽  
Vol 647 ◽  
pp. 315-320 ◽  
Author(s):  
Pradeep Kumar Rathore ◽  
Brishbhan Singh Panwar

This paper reports on the design and optimization of current mirror MOSFET embedded pressure sensor. A current mirror circuit with an output current of 1 mA integrated with a pressure sensing n-channel MOSFET has been designed using standard 5 µm CMOS technology. The channel region of the pressure sensing MOSFET forms the flexible diaphragm as well as the strain sensing element. The piezoresistive effect in MOSFET has been exploited for the calculation of strain induced carrier mobility variation. The output transistor of the current mirror forms the active pressure sensing MOSFET which produces a change in its drain current as a result of altered channel mobility under externally applied pressure. COMSOL Multiphysics is utilized for the simulation of pressure sensing structure and Tspice is employed to evaluate the characteristics of the current mirror pressure sensing circuit. Simulation results show that the pressure sensor has a sensitivity of 10.01 mV/MPa. The sensing structure has been optimized through simulation for enhancing the sensor sensitivity to 276.65 mV/MPa. These CMOS-MEMS based pressure sensors integrated with signal processing circuitry on the same chip can be used for healthcare and biomedical applications.


1996 ◽  
Vol 32 (2) ◽  
pp. 128 ◽  
Author(s):  
M.G. Xu ◽  
H. Geiger ◽  
J.P. Dakin

2018 ◽  
Vol 65 (6) ◽  
pp. 2592-2600 ◽  
Author(s):  
Qiuxu Wei ◽  
Chaochao He ◽  
Jian Chen ◽  
Deyong Chen ◽  
Junbo Wang

2018 ◽  
Vol 1 (3) ◽  
pp. e10012
Author(s):  
Fa Wang ◽  
Xuan Zhang ◽  
Mehdi Shokoueinejad ◽  
Bermans J. Iskandar ◽  
John G. Webster ◽  
...  

2006 ◽  
Vol 920 ◽  
Author(s):  
Zhang Hui ◽  
Tao Xiao Ming ◽  
Yu Tong Xi ◽  
Li Xin Sheng

AbstractThis paper presents an approach for decoding the pressure information exerted over a piece of fabric by means of resistive sensing. The proposed sensor includes a distributed resistive grids constructed by two systems of orthogonally contacted electrical conductive yarns, with no external sensing element to be attached on the fabric. Since the conductive yarns serve as the sensing and wiring elements simultaneously, this design simplifies the fabrication process, reduces the cost and makes the production of large area flexible pressure sensor possible. The location of the pressure applied on the fabric can be identified by detecting the position where the change of the resistances occurs between two embroidered yarns. Meanwhile, the magnitude of the pressure can be acquired by measuring the variations of the resistance. In order to eliminate the “crosstalk” effect between adjoining fibers, the yarns were separately wired on the fabric surface.


Micromachines ◽  
2018 ◽  
Vol 9 (9) ◽  
pp. 438 ◽  
Author(s):  
Youngsang Ko ◽  
Dabum Kim ◽  
Goomin Kwon ◽  
Jungmok You

Improved pressure sensing is of great interest to enable the next-generation of bioelectronics systems. This paper describes the development of a transparent, flexible, highly sensitive pressure sensor, having a composite sandwich structure of elastic silver nanowires (AgNWs) and poly(ethylene glycol) (PEG). A simple PEG photolithography was employed to construct elastic AgNW-PEG composite patterns on flexible polyethylene terephthalate (PET) film. A porous PEG hydrogel structure enabled the use of conductive AgNW patterns while maintaining the elasticity of the composite material, features that are both essential for high-performance pressure sensing. The transparency and electrical properties of AgNW-PEG composite could be precisely controlled by varying the AgNW concentration. An elastic AgNW-PEG composite hydrogel with 0.6 wt % AgNW concentration exhibited high transmittance including T550nm of around 86%, low sheet resistance of 22.69 Ω·sq−1, and excellent bending durability (only 5.8% resistance increase under bending to 10 mm radius). A flexible resistive pressure sensor based on our highly transparent AgNW-PEG composite showed stable and reproducible response, high sensitivity (69.7 kPa−1), low sensing threshold (~2 kPa), and fast response time (20–40 ms), demonstrating the effectiveness of the AgNW-PEG composite material as an elastic conductor.


Sign in / Sign up

Export Citation Format

Share Document