Determination of the Optimal Circuit-Engineering Solution of Electronic Circuits

2020 ◽  
Author(s):  
Nikolay Petrov ◽  
Kremena Dimitrova ◽  
Svilen Ratchev
Keyword(s):  
Electronic Circuits ◽  
Engineering Solution

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

scholarly journals Design and Testing of a Low-Tech DEW Generator for Determining Electromagnetic Immunity of Standard Electronic Circuits

Energies ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3090
Author(s):  
Libor Dražan ◽  
René Križan ◽  
Miroslav Popela
Keyword(s):  
Electromagnetic Interference ◽  
Electrical Power ◽  
Electronic Circuits ◽  
Power Networks ◽  
Antenna Aperture ◽  
Radiation Theory ◽  
Directed Energy ◽  
Electromagnetic Immunity ◽  
Design And Testing

This article describes the effect of high-power electromagnetic environments (HPEMs) on the operation of all basic elements of electrical power networks. Frequency bands are defined for the HPEM environments. Attention is focused particularly on directed energy weapons (DEWs) and intentional electromagnetic interference (IEMI). A classification of DEW and IEMI generators in terms of E-field level and target distance from the DEW or IEMI generator antenna aperture is also described. The main focus of this article is on the design and testing of a low-tech DEW generator used to determine the electromagnetic immunity of standard electronic circuits. In addition, verification of electromagnetic immunity for a simple electronic circuit without adequate protection against the E-field is also explained. The outcome of this article is the determination of the E-field limits for fault-free operation, for malfunctioning states of the tested circuits and for irreversible destruction of the circuits. The measured E-field was compared to basic microwave radiation theory and to simulation results in COMSOL Multiphysics software (COMSOL, Inc. 100 District Avenue Burlington, MA 01803 USA).

Coating of Electronic Components by the RTV Dispersion—Part II: Determination of the Residual Yield Stress After Deposition, and Method to Produce a Drop of Required Cured Skin Thickness and Diameter

1993 ◽  
Vol 115 (3) ◽  
pp. 240-248
Author(s):  
J. A. Owczarek
Keyword(s):  
Yield Stress ◽  
Deposition Time ◽  
Correlation Equation ◽  
Test Method ◽  
Skin Thickness ◽  
Electronic Circuits ◽  
Electronic Components ◽  
Drop Spreading ◽  
Dispersion Part

In this part of the paper the drop test method is used to show that RTV dispersions are in fact plastic “false body” materials, and to determine the magnitudes of the residual yield stresses after shearing for different RTV dispersion lots. With the aid of the equation for the wall shear stress derived in Part I of this paper [1], a correlation equation between the residual yield stress and the deposition variables is obtained, and analysis is made of the drop spreading phenomenon. It is shown that the drop spread, which is responsible for the run-over, or wicking, of external leads of electronic circuits, can be decreased by decreasing the deposition rate of the encapsulant. Finally, a method is developed to determine the required deposition flow rate and deposition time to produce a drop having required final diameter and cured skin thickness.

scholarly journals EXPERIMENTAL DETERMINATION OF HEAT TRANSFER COEFFICIENT BY NATURAL CONVECTION FOR A COMMERCIALLY AVAILABLE HEAT SINK USED FOR COOLING OF ELECTRONIC CHIPS

2014 ◽  
pp. 250-252
Author(s):  
SUNIL HIREHOLI ◽  
K.S. SHASHISHEKHAR ◽  
S. GEORGE MILTON
Keyword(s):  
Heat Transfer ◽  
Heat Transfer Coefficient ◽  
Transfer Coefficient ◽  
Heat Sink ◽  
Input Voltage ◽  
Power Input ◽  
Electronic Circuits ◽  
Heating Coil ◽  
The Heat Transfer Coefficient

Measurements have been conducted for experimentally determining the heat transfer co-efficient of a commercially available heat sink employed in electronic circuits. For determining the heat transfer coefficient the chip is replaced with a heating coil. The power input to the heating coil is obtained by measuring the input voltage and current. Temperature measurement for varying heat inputs is done using RTD thermocouples. Heat transfer co-efficient is computed from the measured data. This is done for different configurations of the heat sink.

Galactic orbits of stars

1966 ◽  
Vol 25 ◽  
pp. 93-97
Author(s):  
Richard Woolley
Keyword(s):  
Globular Cluster ◽  
Potential Field ◽  
High Velocity ◽  
Velocity Vector ◽  
Variable Stars ◽  
The Sun ◽  
Proper Motions ◽  
Rr Lyrae ◽  
The Galaxy

It is now possible to determine proper motions of high-velocity objects in such a way as to obtain with some accuracy the velocity vector relevant to the Sun. If a potential field of the Galaxy is assumed, one can compute an actual orbit. A determination of the velocity of the globular clusterωCentauri has recently been completed at Greenwich, and it is found that the orbit is strongly retrograde in the Galaxy. Similar calculations may be made, though with less certainty, in the case of RR Lyrae variable stars.

Distance to SN 1987A and the LMC

1999 ◽  
Vol 190 ◽  
pp. 549-554
Author(s):  
Nino Panagia
Keyword(s):  
Angular Size ◽  
Large Magellanic Cloud ◽  
Magellanic Cloud ◽  
Light Curves ◽  
Distance Modulus ◽  
Absolute Size ◽  
Sn 1987A

Using the new reductions of the IUE light curves by Sonneborn et al. (1997) and an extensive set of HST images of SN 1987A we have repeated and improved Panagia et al. (1991) analysis to obtain a better determination of the distance to the supernova. In this way we have derived an absolute size of the ringRabs= (6.23 ± 0.08) x 1017cm and an angular sizeR″ = 808 ± 17 mas, which give a distance to the supernovad(SN1987A) = 51.4 ± 1.2 kpc and a distance modulusm–M(SN1987A) = 18.55 ± 0.05. Allowing for a displacement of SN 1987A position relative to the LMC center, the distance to the barycenter of the Large Magellanic Cloud is also estimated to bed(LMC) = 52.0±1.3 kpc, which corresponds to a distance modulus ofm–M(LMC) = 18.58±0.05.

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