A 1.8-mW low power, PVT-resilient, high linearity, modified Gilbert-cell down-conversion mixer in 28-nm CMOS

Author(s):  
R. Ciocoveanu ◽  
J. Rimmelspacher ◽  
R. Weigel ◽  
A. Hagelauer ◽  
V. Issakov
2021 ◽  
Vol 11 (1) ◽  
pp. 429
Author(s):  
Min-Su Kim ◽  
Youngoo Yang ◽  
Hyungmo Koo ◽  
Hansik Oh

To improve the performance of analog, RF, and digital integrated circuits, the cutting-edge advanced CMOS technology has been widely utilized. We successfully designed and implemented a high-speed and low-power serial-to-parallel (S2P) converter for 5G applications based on the 28 nm CMOS technology. It can update data easily and quickly using the proposed address allocation method. To verify the performances, an embedded system (NI-FPGA) for fast clock generation on the evaluation board level was also used. The proposed S2P converter circuit shows extremely low power consumption of 28.1 uW at 0.91 V with a core die area of 60 × 60 μm2 and operates successfully over a wide clock frequency range from 5 M to 40 MHz.


Author(s):  
Jae-Sik Jang ◽  
Laurence Moquillon ◽  
Patrice Garcia ◽  
Estelle Lauga-Larroze ◽  
Jean-Michel Fournier

Author(s):  
Abolfazl Ebrahimi ◽  
Mohamad Jafar Hemmati ◽  
Ahmad Hakimi ◽  
Kambiz Afrooz
Keyword(s):  

2012 ◽  
Vol 2012 (1) ◽  
pp. 000018-000022
Author(s):  
S.Q. Gu ◽  
D.W. King ◽  
V. Ramachandran ◽  
B. Henderson ◽  
U. Ray ◽  
...  

Wide IO memory has higher IO–count (up to 16×) than typical low power DDR memory, which could enable higher system bandwidth at low power. Wide IO DRAM can be stacked as Micro Pillar Grid Array (MPGA) cubes [1], which will provide high memory density for the system. With the high number (∼1200) of connections to the MPGA, a direct face to back stack (3D) to logic chip with high density TSV is the most efficient approach. To utilize the extra large bandwidth, the logic chip containing high speed processors requires logic chip fabrication in advanced node devices. In this paper, we report the–demonstration of a 2-memory chip JEDEC standard wide IO MPGA stacking on logic chip through a fabless supplier chain. A successful integration of via middle through Si via (TSV) to 28 nm logic process has been demonstrated with minimum impact to logic devices. The final package showed good TSV and ubump integrity. The wide IO memory is functional post stacking. In addition, the early reliability data for TSV and ubump showed no detrimental impact through temperature cycle and high temperature storage.


Author(s):  
Wei Cai ◽  
Frank Shi

<p class="lead">The objective of this research was to design a basic 2.4 GHz heterodyne receiver for healthcare on a 130um CMOS process. The ultimate goal for the wireless industry is to minimize the trade-offs between performance and cost, and between performance and low power consumption design. In the first part, a low noise amplifier (LNA), which is commonly used as the first stage of a receiver, is introduced and simulated. LNA performance greatly affects the overall receiver performance. The LNA was designed at the 2.4 GHz ISM band, using the cascode with an inductive degeneration topology. The second part of this thesis presents a low power 2.4 GHz down conversion Gilbert Cell mixer. In the third part, a high-performance LC-tank CMOS VCO was designed at 2.4 GHz. The design uses using PMOS cross-coupled topology with the varactor for wider tuning range topology. In the first part, a low noise amplifier (LNA) design reaches the NF of 2 dB, has a power consumption of 2.2 mW, and has a gain of 20dB. The second part of this proposal presents a low power 2.4 GHz down conversion Gilbert Cell mixer. The obtained result shows a conversion gain of 14.6 dB and power consumption of 8.2 mW at a 1.3V supply voltage. In the third part, a high-performance LC-tank CMOS VCO was designed at 2.4 GHz. The final simulation of the phase noise is-128 dBc/Hz, and the tuning range is 2.3 GHz-2.5 GHz while the total power consumption is 3.25 mW.<strong> </strong>The performance of the receiver meets the specification requirements of the desired standard.</p>


2019 ◽  
Vol 55 (24) ◽  
pp. 1273-1275 ◽  
Author(s):  
J.E. Kim ◽  
T. Yoo ◽  
K.‐H. Baek ◽  
T.T.‐H. Kim

Author(s):  
V. Issakov ◽  
R. Ciocoveanu ◽  
R. Weigel ◽  
A. Geiselbrechtinger ◽  
J. Rimmelspacher
Keyword(s):  
60 Ghz ◽  

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