Basic analog circuits with a-GIZO thin-film transistors: Modeling and simulation

2012 ◽  
Author(s):  
Ganga Bahubalindruni ◽  
Vitor Grade Tavares ◽  
Pedro Barquinha ◽  
Candido Duarte ◽  
Rodrigo Martins ◽  
...  
Keyword(s):  
Thin Film ◽  
Modeling And Simulation ◽  
Analog Circuits ◽  
Thin Film Transistors

Stability of Amorphous Silicon Thin Film Transistors for Analog Circuit Applications

1997 ◽  
Vol 467 ◽  
Author(s):  
R. I. Hornsey ◽  
T. Mahnke ◽  
P. Madeira ◽  
K. Aflatooni ◽  
A. Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Analog Circuits ◽  
Thin Film Transistors ◽  
Reverse Bias ◽  
Analog Circuit ◽  
Large Area ◽  
Silicon Thin Film ◽  
Threshold Voltages

ABSTRACTAnalog circuits using amorphous silicon thin film transistors offer significant advantages for in situ signal processing in large-area optical and x-ray imagers. However such circuits are susceptible to gate-bias-induced shifts in the threshold voltages of the constituent transistors. In this work, the change of threshold voltage for devices undergoing cycles of stress, relaxation and reverse bias is measured in order to determine the feasibility of resetting the threshold voltage electrically. It is concluded that, although the reverse bias does assist the recovery of the threshold voltage, the process is still not sufficiently rapid. An analog amplifier circuit is then described which uses negative feedback to achieve a gain that is stable to within 6% over a period of 8 hours.

scholarly journals Modeling and simulation of polycrystalline ZnO thin-film transistors

2003 ◽  
Vol 94 (12) ◽  
pp. 7768 ◽  
Author(s):  
Faruque M. Hossain ◽  
J. Nishii ◽  
S. Takagi ◽  
A. Ohtomo ◽  
T. Fukumura ◽  
...  
Keyword(s):  
Thin Film ◽  
Modeling And Simulation ◽  
Thin Film Transistors ◽  
Zno Thin Film

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

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