Increased Capacitance Density with Metal-Insulator-Metal - Metal Finger Capacitor (MIM-MFC)

Author(s):  
Kalavathi Subramaniam ◽  
Albert Victor Kordesch ◽  
Mazlina Esa

An ultra-thin three-dimensional nanostructured biosensor device based on the Plasmonic principle is custom designed and analyzed for the Plasmonic properties. Here the FDTD (Finite Difference Time Domain) method is adopted as mathematical model using MEEP (MIT Electromagnetic Equation Propagation) open-source simulation tool. The four models are investigated and analyzed in the following order for respective Plasmonic properties of fraction of total power with respect to the wavelength for model-I MIMM layers (Metal-Insulator-Metal-Metal) with no nanostructure (AlAl2O3-Cr-Au), model-II MIMM layers with no nanostructure (Al- Al2O3-Cr-Au) and Biotin layer, model-III MIMM layers (AlAl2O3-Cr-Au) with 11 x 11 Nano well structures and model-IV MIMM layers with Nano well structures and Biotin layer (AlAl2O3-Cr-Au-Biotin). Here the structural and functional behavior of model I Vs Model II Vs Model III vs Model IV is simulated and the fraction of power is measured across the biosensor stack layer of MIMM for the wave length range quantified. In model II there is an approximate 5% power loss at all layers when compared to model I due to addition of the Biotin layer. In model IV there is an approximate 50 % power loss when compared to model III at Au layer, 60% power loss when compared to model III at Al layer and 67% of power loss at Cr + Al2O3 due to Biotin layer. These quantifications can be used to understand the model and the behavior of the biosensor under various conditions well before the fabrication, thereby reducing the cost and to comprehend the behavior of each material in terms of power dissipation so different material can be experimented.


2009 ◽  
Vol 95 (11) ◽  
pp. 113502 ◽  
Author(s):  
Yung-Hsien Wu ◽  
Bo-Yu Chen ◽  
Lun-Lun Chen ◽  
Jia-Rong Wu ◽  
Min-Lin Wu

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DF09 ◽  
Author(s):  
Takuya Tsutsumi ◽  
Suehiro Sugitani ◽  
Kazumi Nishimura ◽  
Minoru Ida

2011 ◽  
Vol 50 (4) ◽  
pp. 04DF09 ◽  
Author(s):  
Takuya Tsutsumi ◽  
Suehiro Sugitani ◽  
Kazumi Nishimura ◽  
Minoru Ida

2021 ◽  
Author(s):  
S Nath

A ferroelectric metal insulator metal (MIM) varactor structure incorporating a floating metal and coplanar waveguide (CPW) has been introduced here. The work of the proposed varactor is based on the field-dependent material properties of (Ba,Sr)TiO3 (BST) thin film. A capacitance tunability of 44% has been achieved for the bias voltage of 0 V to 10 V over a frequency range of 1 GHz to 3 GHz. The proposed varactor structure yields a compact area, high capacitance density, and reduced mask process (2 masks)


2008 ◽  
Vol 92 (13) ◽  
pp. 132902 ◽  
Author(s):  
V. Mikhelashvili ◽  
P. Thangadurai ◽  
W. D. Kaplan ◽  
G. Eisenstein

2003 ◽  
Vol 783 ◽  
Author(s):  
Hongjiang Sun ◽  
Ka Man Lau ◽  
Eyup Aksen ◽  
Nancy Bell

AbstractImprovement activities were made in fully integrated Metal-Insulator-Metal (MIM) capacitors (>5fF/μm2) used in the advanced SiGe RF BiCMOS technology. By changing the process sequence of the lower metal electrode and the MIM capacitor, an improved MIM capacitor has achieved a lower leakage density with a better voltage linearity at 27°C − 150°C temperature range and a lower temperature dependency from −6V to +6V. Voltage coefficients VC1 and VC2 are 187ppm/V and 24ppm/V2 respectively, and temperature coefficient of capacitance TC1 is 99 ppm/°C with a negligible TC2. The leakage current density is 3.1×10−3 A/cm2 at 125°C for 5.5V with a breakdown voltage of 20V.To increase capacitance density while maintaining low leakage, an ozone treatment after tantalum pentoxide film deposition has been investigated. A capacitance density as high as 10.3fF/μm2 has been achieved with a leakage density one order lower than the standard process. The fact that the extracted dielectric constant increased from 28 to 32 as well as the significant changes of the voltage and temperature coefficients clearly indicated that the ozone treatment has changed the intrinsic property of the tantalum pentoxide film as well as the top dielectric surface.


Sign in / Sign up

Export Citation Format

Share Document