Quantum Confinement Model for Phototransport Processes in Nanocrystalline Porous Silicon

2006 ◽  
Author(s):  
M. Ciurea ◽  
I. Stavarache ◽  
V. Iancu
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Confinement Model

Photoluminescence in Porous Silicon: Evidence for the Quantum Confinement Model

1991 ◽  
Vol 256 ◽  
Author(s):  
David L. Naylor ◽  
Sung B. Lee ◽  
John C. Pincenti ◽  
Brett E. Bouma
Keyword(s):  
Porous Silicon ◽  
Hydrofluoric Acid ◽  
Quantum Wire ◽  
Quantum Confinement ◽  
Electrochemical Etching ◽  
Photoluminescence Spectra ◽  
Peak Wavelength ◽  
Effects Of Temperature ◽  
Good Agreement ◽  
Confinement Model

ABSTRACTPhotoluminescence spectra have been measured in porous silicon following electrochemical etching in dilute hydrofluoric acid (HF). The effects of HF concentration during etching on the efficiency and peak wavelength of photoluminescence have been investigated. The effects of temperature between 25°C and 200°C on PL spectra have been recorded. Photoluminescence lifetimes as a function of wavelength have been studied following ultrashort UV photoexcitation. A number of lifetime components in the decay are observed the longest in good agreement over the wavelength range of 500 to 600 nm with a silicon quantum wire model. At longer wavelengths a departure from lifetimes of the wire model is observed and two hypotheses for the discrepancy are presented.

Relationships Between Photoluminescence Spectra and Porosity of Porous Silicon

1994 ◽  
Vol 332 ◽  
Author(s):  
H.Z. Song ◽  
L.Z. Zhang ◽  
B.R. Zhang ◽  
G.G. Qin
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Light Emission ◽  
Photoluminescence Spectra ◽  
Lower Side ◽  
Si Substrates ◽  
Peak Energy ◽  
P Type ◽  
Confinement Model

ABSTRACTIt was found that porous silicon (PS) layers formed on 0.01 Ωcm (111) and 0.02 Ωcm (100) Si substrates show high photoluminescence (PL) peak energies on both lower and higher porosity sides and a minimum of PL peak energy at the moderate porosity, while those formed on 0.8 and 10Ωcm (111) p-type Si substrates show an increase of PL peak energy with porosity on the lower side and a saturation of PL peak energy with porosity on the higher side. These experimental facts are not consistent with the quantum confinement model for light emission of PS, which predicts a monotonous increase of PL peak energy with PS porosity.

Effect of Preparation Conditions on the Silicon L-Edge In Electrochemically Prepared Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
T. Van Buuren ◽  
T. Tiedje ◽  
W. Weydanz
Keyword(s):  
Electronic Structure ◽  
High Resolution ◽  
Porous Silicon ◽  
Quantum Confinement ◽  
Light Exposure ◽  
Blue Shift ◽  
Bulk Silicon ◽  
Preparation Conditions ◽  
P Type ◽  
Confinement Model

AbstractHigh resolution measurements of the silicon L-edge absorption in electrochemically prepared porous silicon show that the absorption threshold is shifted to higher energy relative to bulk silicon, and that the shift is dependent on how the porous silicon is prepared. When the porous silicon is made from n-type material with light exposure, the blue shift increases logarithmically with the anodizing current. Porous silicon prepared by anodizing p-type silicon exhibits a blue shift in the L-edge which increases with the time spent in the HF solution after the anodizing potential is turned off. The data are consistent with the quantum confinement model for the electronic structure of porous silicon.

Can Oxidation and Other Treatments Help Us Understand the Nature of Light-Emitting Porous Silicon?

1993 ◽  
Vol 298 ◽  
Author(s):  
P.M. Fauchet ◽  
E. Ettedgui ◽  
A. Raisanen ◽  
L.J. Brillson ◽  
F. Seiferth ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Vacuum Annealing ◽  
Surface States ◽  
Careful Analysis ◽  
Experimental Results ◽  
Dangling Bonds ◽  
Light Emitting ◽  
Confinement Model

AbstractUsing a careful analysis of the properties of light-emitting porous silicon (LEpSi), we conclude that a version of the “smart” quantum confinement model which was first proposed by F. Koch et al [Mat. Res. Soc. Symp. Proc. 283, 197 (1993)] and allows for the existence of surface states and dangling bonds, is compatible with experimental results. Among the new results we present in support of this model, the most striking ones concern the strong infrared photoluminescence that dominates the room temperature cw spectrum after vacuum annealing above 600 K.

The Spectroscopy of Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
P. D. J. Calcott ◽  
K. J. Nash ◽  
L. T. Canham ◽  
M. J. Kane
Keyword(s):  
Porous Silicon ◽  
Luminescence Spectrum ◽  
Quantum Confinement ◽  
Spectroscopic Data ◽  
Crystalline Silicon ◽  
Strong Support ◽  
Careful Study ◽  
Interesting Issue ◽  
Silicon Quantum Dot ◽  
Confinement Model

ABSTRACTThe spectroscopic evidence that the main visible photoluminescence (PL) band of porous silicon (the 'S' band) originates from quantum confined crystalline silicon is presented, and arguments that claim to invalidate this evidence are analysed in detail. We find that a careful study of all the spectroscopic data provides strong support for the quantum confinement model. Additionally we consider the interesting issue of the luminescence spectrum of a single silicon quantum dot.

Effect of Metallic Ions on Photoluminescence of Porous Silicon

2010 ◽  
Vol 663-665 ◽  
pp. 641-644 ◽  
Author(s):  
Bao Gai Zhai ◽  
Ming Meng ◽  
Qing Lan Ma ◽  
Yuan Ming Huang
Keyword(s):  
Porous Silicon ◽  
Cross Section ◽  
Electrochemical Deposition ◽  
Quantum Confinement ◽  
Careful Consideration ◽  
Metallic Ions ◽  
Photoluminescence Spectra ◽  
Physical Origin ◽  
Sem Images ◽  
Confinement Model

In the present paper, we have not only investigated the top surface and cross-section morphology, but also measured photoluminescence spectra characteristic of porous silicon after deposition of metallic ions by electrochemical deposition employing scanning electron microscopy (SEM) and spectrometer, respectively. It is apparent from the SEM images that the microstructure of porous silicon is seriously ruined by the metallic ions deposited by electrochemical deposition. Most interesting is the finding that in the photoluminescence spectrum of porous silicon after the deposition of metallic ions such as AL3+ and Cu2+, the luminescence band gradually is quenched as the electrochemical deposition progressed. A careful consideration of the results obtained show that according to the basic theory of well-established quantum confinement model, the quenching of photoluminescence spectra of porous silicon may well be attributed to the microstructure fell into ruin. On the other side of the fence, we can interpret the physical origin of the phenomenon in view of the presence of metallic ions which give rise a series of energy level deep in the band gap of porous silicon.

DETERMINATION OF NANOMETER-SCALE SIZES IN n+-TYPE POROUS SILICON BY THE USE OF X-RAY AND RAMAN SPECTROSCOPIES

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1769-1772
Author(s):  
A. RAMÍREZ-PORRAS
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Uv Light ◽  
Electrochemical Etching ◽  
Nanometer Scale ◽  
X Ray ◽  
Recombination Processes ◽  
Phosphorus Doped ◽  
Confinement Model

Porous silicon layers were obtained by electrochemical etching on (111) plane surfaces of crystalline phosphorus-doped silicon in the presence of hydrofluoric acid. The photoluminescence of this kind of layers when illuminated with UV light is possibly explained by the quantum confinement model (QCM), which states the presence of nanometer-scale crystallites that enlarge the semiconductor band gap up to optical photon energies when the band-to-band recombination processes take place. In this study, the size determination of those proposed structures was performed by X-ray diffractiometry and by Raman spectroscopy. The obtained results suggest a consistency between the experimental work and the QCM.

Quantum Confinement Effects on the Dielectric Constant of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Tsu ◽  
L. Ioriatti ◽  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux
Keyword(s):  
Dielectric Constant ◽  
Porous Silicon ◽  
Size Effects ◽  
Quantum Confinement ◽  
Electrochemical Etching ◽  
Index Of Refraction ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Quantum Confinement Effects ◽  
Shallow Impurities

ABSTRACTThe reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.

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