On The Effective Polarization Charges In Theextension Of A Piezoelectric Semiconductor Fiber With A Pn Junction

Author(s):  
Ruo-ran CHENG ◽  
Chun-li ZHANG ◽  
Wei-qiu CHEN ◽  
Jia-shi YANG
Author(s):  
N. Wakai ◽  
M. TsuTsumi ◽  
T. Setoya

Abstract Mechanism of destruction caused by electrostatic discharge of PN junction was examined from two viewpoints; classification of destruction mode with consideration to destructive energy density, and comparison of destruction shape. Destructive energy density of PN junction was calculated based on Speakman model, and destruction mode was classified by Wunsch-Bell plot. As a result of Wunsch-Bell plot, electric discharge which occur at low resistance, for example machine model (MM: C∙R = 200pF ∙ 0Ω), resulted in adiabatic destruction that does not involve thermal diffusion. With electric discharge at high resistance, for example human body model (HBM: C∙R = 100pF ∙ 1500Ω), excessive destruction in intermediate region that involves thermal diffusion, and depending on the device, destruction at equilibrium region were proven to be reproducible. In case of MM, (adiabatic region destruction) destruction was confirmed in a wide extent of the joint part, but in case of HBM (intermediate region destruction) destruction was confirmed near the center of the joint part. From this fact, it was found that by verifying the places of destruction and their shapes, although in special cases, it is possible to know the destruction mode when destruction occurs.


2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.


2021 ◽  
Vol 292 ◽  
pp. 120160
Author(s):  
Ye Zeng ◽  
Zhen Cao ◽  
Jizhang Liao ◽  
Hanfeng Liang ◽  
Binbin Wei ◽  
...  
Keyword(s):  

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3926
Author(s):  
Mengen Li ◽  
Qiaoyun Zhang ◽  
Bingbing Wang ◽  
Minghao Zhao

The performance of devices fabricated from piezoelectric semiconductors, such as sensors and actuators in microelectromechanical systems, is superior; furthermore, plate structures are the core components of these smart devices. It is thus important to analyze the electromechanical coupling properties of piezoelectric semiconductor nanoplates. We established a nanoplate model for the piezoelectric semiconductor plate structure by extending the first-order shear deformation theory. The flexural vibrations of nanoplates subjected to a transversely time-harmonic force were investigated. The vibrational modes and natural frequencies were obtained by using the matrix eigenvalue solver in COMSOL Multiphysics 5.3a, and the convergence analysis was carried out to guarantee accurate results. In numerical cases, the tuning effect of the initial electron concentration on mechanics and electric properties is deeply discussed. The numerical results show that the initial electron concentration greatly affects the natural frequency and electromechanical fields of piezoelectric semiconductors, and a high initial electron concentration can reduce the electromechanical fields and the stiffness of piezoelectric semiconductors due to the electron screening effect. We analyzed the flexural vibration of typical piezoelectric semiconductor plate structures, which provide theoretical guidance for the development of new piezotronic devices.


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