Characterization of MOSFETs formed by gate masked ion implantation technique

ABSTRACTBoron doped a-SiC:H samples have been obtained both by gas phase doping during film growth and by using ion implantation. All the implanted samples were annealed under vacuum to remove the damage introduced by ion implantation and to produce a dopant diffusion. Physical properties deduced by optical, electrical and structural characterization of the two sets of samples have been compared. Ion implantation technique allows a better control of the dopant dose but increases the compositional disorder and the obtained conductivity values are one order of magnitude lower than those of gas doped samples.

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Formation and Characterization of Electric Contacts on CVD Diamond Films Prepared by Ion Implantation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.473-474.123 ◽

2005 ◽

Vol 473-474 ◽

pp. 123-128

Author(s):

Gergely Kovách ◽

Hajnalka Csorbai ◽

G. Dobos ◽

Albert Karacs ◽

Gábor Pető

Keyword(s):

Ion Implantation ◽

Photoelectron Spectroscopy ◽

Electronic Device ◽

Chemical Vapor ◽

Diamond Surface ◽

Implantation Technique ◽

Gold Deposition ◽

Characterization Methods ◽

Surface Conduction

Diamond layers have a potential application as the highest band-gap semiconductor for electronic devices. One of the major problems is to form electric contact on the diamond surface useful for an electronic device. This paper shows the properties of the contacts formed by the very promising ion implantation technique. The diamond layers were deposited with Microwave Assisted Chemical Vapor Deposition (MW-CVD) equipped with special extra features like High Voltage Bias and Heated Substrate Holder [1]. Phosphoruos ion implantation and gold deposition were used for the contact formation. This technique resulted graphitization the top of the diamond film and intermixing of gold with the graphite or diamond surface. The properties of the contacts were tested with surface conduction characterization methods, and the properties of the contact to diamond interface was investigated with SIMS (Secondary Ion Mass Spectroscopy ) and XPS (X-ray Photoelectron Spectroscopy).

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Characterization of n-type layer by S+ ion implantation in 4H-SiC

MRS Proceedings ◽

10.1557/proc-622-t8.6.1 ◽

2000 ◽

Vol 622 ◽

Author(s):

Yasunori Tanaka ◽

Naoto Kobayashi ◽

Hajime Okumura ◽

Sadafumi Yoshida ◽

Masataka Hasegawa ◽

...

Keyword(s):

Ion Implantation ◽

Rutherford Backscattering Spectrometry ◽

Hall Effect Measurement ◽

Activation Energies ◽

Implantation Technique ◽

Post Annealing ◽

Type Layer ◽

Virgin Sample ◽

Significant Difference

ABSTRACTWe investigated the optical, electrical and structural properties of the layer which was implanted with sulfur ion(S+) in 4H-SiC. By using the high temperature ion implantation technique more less residual defects were observed compared with the room temperature ion implantation by Rutherford backscattering spectrometry and channeling(RBS-channeling). After annealing at 1700°C there was no significant difference between the implanted sample and virgin sample in crystallinity within the detection limit of RBS-channeling. From the result of low temperature photoluminescence(LTPL) we could see the photoluminescences, so-called D1 and D2center, originating in the defects formed by ion implantation and post-annealing(∼1700°C) processes and confirmed that their intensities decreased with the increasing of the total dose of S+. The result of Hall effect measurement suggested that the conduction type of S+-implanted layer is n-type and their activation energies were 275meV and 410meV by the fitting of neutrality equation assuming the two activation energies for the hexagonal and cubic lattice sites in 4H-SiC.

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