Formation and Characterization of Electric Contacts on CVD Diamond Films Prepared by Ion Implantation

2005 ◽  
Vol 473-474 ◽  
pp. 123-128
Author(s):  
Gergely Kovách ◽  
Hajnalka Csorbai ◽  
G. Dobos ◽  
Albert Karacs ◽  
Gábor Pető
Keyword(s):  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Implantation Technique ◽  
Gold Deposition ◽  
Characterization Methods ◽  
Surface Conduction

Diamond layers have a potential application as the highest band-gap semiconductor for electronic devices. One of the major problems is to form electric contact on the diamond surface useful for an electronic device. This paper shows the properties of the contacts formed by the very promising ion implantation technique. The diamond layers were deposited with Microwave Assisted Chemical Vapor Deposition (MW-CVD) equipped with special extra features like High Voltage Bias and Heated Substrate Holder [1]. Phosphoruos ion implantation and gold deposition were used for the contact formation. This technique resulted graphitization the top of the diamond film and intermixing of gold with the graphite or diamond surface. The properties of the contacts were tested with surface conduction characterization methods, and the properties of the contact to diamond interface was investigated with SIMS (Secondary Ion Mass Spectroscopy ) and XPS (X-ray Photoelectron Spectroscopy).

Photoelectron spectroscopy study of amorphous silicon-carbon alloys deposited by plasma-enhanced chemical vapor deposition

1996 ◽  
Vol 11 (12) ◽  
pp. 3017-3023 ◽  
Author(s):  
G. Cicala ◽  
G. Bruno ◽  
P. Capezzuto ◽  
P. Favia
Keyword(s):  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Optical Transmission ◽  
Chemical Vapor ◽  
Spectroscopy Study ◽  
Air Oxidation ◽  
X Ray ◽  
Silicon Carbon

X-ray photoelectron spectroscopy (XPS) coupled with Fourier transform infrared (FTIR) and optical transmission spectroscopy (OTS) has been used for the characterization of silicon-carbon alloys (a-Si1−xCx: H, F) deposited via plasma, by varying the CH4 amount in SiF4–CH4–H2 feeding mixture. XPS measurements have shown that carbon-rich a-Si1−xCx: H, F alloys include large amounts of fluorine (>11 at. %), which make the films susceptible to the air oxidation. In addition, the effect of the alloying partner carbon on the valence band (VB) and on the VB edge position of amorphous silicon is also described.

Preparation and Characterization of Chromium Containing amorphous Hydrogenated Carbon Films (A-C:H/Cr)

1995 ◽  
Vol 388 ◽  
Author(s):  
R. Gampp ◽  
P. Gantenbein ◽  
P. Oelhafen
Keyword(s):  
Chromium Carbide ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Amorphous Hydrogenated Carbon ◽  
High Chemical Stability

AbstractChromium containing amorphous hydrogenated carbon films (a-C:H/Cr) were prepared in a process that combines rf plasma activated chemical vapor deposition of methane and magnetron sputtering of a chromium target. During the deposition the silicon substrates were kept at 200°C and dc biased at -200 V in order to obtain films with high chemical stability which is required for the application as solar selective surfaces. the films with different Cr concentrations (5 to 49 at.%) were characterized by in situ x-ray photoelectron spectroscopy (XPS). Up to 40 at.%, chromium proves to be built into the cermet-like films in the form of chromium carbide clusters. above 40 at.%, chromium is partly metallic. a modification of the a-C:H matrix in the vicinity of the chromium carbide clusters has been observed.

a-SiC:H Doped with Reactive Gases and with Ion Implantation

1991 ◽  
Vol 219 ◽  
Author(s):  
F. Demichelis ◽  
C. F. Pirri ◽  
E. Tresso ◽  
G. Della Mea ◽  
V. Rigato ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Gas Phase ◽  
Structural Characterization ◽  
Film Growth ◽  
Implantation Technique ◽  
Boron Doped ◽  
Order Of Magnitude ◽  
Compositional Disorder ◽  
Reactive Gases

ABSTRACTBoron doped a-SiC:H samples have been obtained both by gas phase doping during film growth and by using ion implantation. All the implanted samples were annealed under vacuum to remove the damage introduced by ion implantation and to produce a dopant diffusion. Physical properties deduced by optical, electrical and structural characterization of the two sets of samples have been compared. Ion implantation technique allows a better control of the dopant dose but increases the compositional disorder and the obtained conductivity values are one order of magnitude lower than those of gas doped samples.

Antimony on Diamond: A Comparison to Sb/Si and Sb/Ge

1992 ◽  
Vol 270 ◽  
Author(s):  
J. Wu ◽  
M. Richter ◽  
R. Cao ◽  
J. Terry ◽  
P. Pianetita ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electronic Device ◽  
Diamond Surface ◽  
Heteroepitaxial Growth ◽  
Diamond Surfaces ◽  
Low Energy Electron Diffraction ◽  
Adsorption Sites ◽  
Device Applications ◽  
Low Energy Electron ◽  
Silicon And Germanium

ABSTRACTDiamond is an important semiconductor which has great potential in high temperature, high power device applications. In the fabrication process of diamond electronic device, doping ofdiamond and understanding of diamond/metal interfaces are important. As a Column V element, Sb is a possible dopant for diamond. Early work reported that Sb is incorporated into diamond by ion implantaion [1]. In addition, Sb plays an important role in Si and Ge heteroepitaxial growth. On the Si or Ge surface one ordered monolayer of Sb occupies the epitaxial sites and saturates the surface dangling bonds, which leads to uniform epitaxial growth. While diamond has the same crystal structure as both silicon and germanium, it has a drastically smaller lattice and much stronger bond. This makes it very difficult to extrapolate antimony's behavior on diamond from its behavior on either silicon or germanium. In this work, we have studied the electronic and geometric structure of Sb on diamond surfaces using photoelectron spectroscopy and low energy electron diffraction. While the exact adsorption sites could not be determined, we find that antimony strongly bonds to the diamond surface. Further, antimony behaves very differently on the diamond(100) face as compared to the diamond(111) face. We also find that neither Sb/diamond system behaves like antimony on either silicon or germanium. We attribute these results to the drastically smaller diamond lattice and the stronger C-C bond.

scholarly journals Synthesis and Characterization of a New Aluminum-Doped Bismuth Subcarbonate

Crystals ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 466
Author(s):  
Loisangela Álvarez ◽  
Blanca Rojas de Gascue ◽  
Rolando J. Tremont ◽  
Edgar Márquez ◽  
Euclides J. Velazco
Keyword(s):  
Infrared Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Energy Dispersive ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
Characterization Methods ◽  
X Ray ◽  
Fourier Transformed Infrared Spectroscopy ◽  
Anionic Part

A new compound, Bi2O2CO3:Al, was synthesized by the coprecipitation method. The characterization was done by X-ray diffraction (XRD), Fourier transformed infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), electronic scanning microscopy (SEM), and energy dispersive X-ray spectroscopy (EDX). The characterization methods allowed to identify the Bi2O2CO3:Al compound, such as the Al-doped Bi2O2CO3 by XRD, the anionic part (CO32−) by FTIR, and the presence of aluminum in the compound by XPS and EDX. It was confirmed to have a nanostructure like a nanosheet and a microstructure that resembles a type sponge by SEM.

Synthesis and characterization of B–C–N compounds on molybdenum

1999 ◽  
Vol 14 (3) ◽  
pp. 1137-1141 ◽  
Author(s):  
Jie Yu ◽  
E. G. Wang ◽  
Guichang Xu
Keyword(s):  
Substrate Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Synthesis And Characterization ◽  
Boron Carbonitride ◽  
X Ray ◽  
Hot Filament ◽  
N Compounds

B–C–N compounds were prepared on molybdenum by means of bias-assisted hot filament chemical vapor deposition (HFCVD). Effect of the substrate temperature (Ts) on the growth of B–C–N films has been investigated systematically by x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) based on the detailed analysis and calculation of the XPS. The substrate temperature plays a key role in the formation of the bonding states, the composition, and the surface morphology. Boron carbonitride is the main phase at all depositing temperatures, and the obtained compounds are as follows: B0.83C0.17 + B0.39C0.35N0.26 at 873 K, B0.30C0.34N0.36 at 973 K, B0.64C0.36 + B0.51C0.23N0.26 at 1073 K, B0.51C0.31N0.18 at 1173 K, and B0.37C0.54N0.09 at 1273 K.

ESR characterization of defects produced in diamond surface by B ion implantation

1997 ◽  
Vol 117-118 ◽  
pp. 574-577 ◽  
Author(s):  
Y. Show ◽  
F. Matsuoka ◽  
T. Izumi ◽  
M. Deguchi ◽  
M. Kitabatake ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Diamond Surface

Characterization of MOSFETs formed by gate masked ion implantation technique

1968 ◽  
Vol 15 (6) ◽  
pp. 415-415 ◽  
Author(s):  
R.W. Bower ◽  
H.G. Dill ◽  
K.G. Aubuchon ◽  
S.A. Thompson
Keyword(s):  
Ion Implantation ◽  
Implantation Technique

Synthesis and Characterization of Nanocrystalline Diamond and Its Biomedical Application

2004 ◽  
Vol 843 ◽  
Author(s):  
Zhenqing Xu ◽  
Arun Kumar ◽  
Ashok Kumar ◽  
Arun Sikder
Keyword(s):  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Biomedical Application ◽  
Hydrogen Plasma ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Si Substrates ◽  
Temperature And Pressure

ABSTRACTDiamond is known as the material that has excellent mechanical, electrical and chemical properties. Diamond is also an ideal interface that is compatible with microelectronics process and biological environments to work as a biosensor platform with excellent selectivity and stability. In our study, nanocrystalline diamond (NCD) films were grown on Si substrates by the microwave plasma enhanced chemical vapor deposition (MPECVD) method. Parameters such as gas composition, temperature and pressure are investigated to get the best film quality. Scanning electron microscopy (SEM) and Raman spectroscopy were used to characterize the NCD films. Then the NCD films were treated by hydrogen plasma in the CVD chamber to obtain the hydrogen terminated surface. This hydrogenated NCD film is ready for bio-modification and can work as the platform of the biosensors. Fourier Transform Infrared Spectroscopy (FTIR) and X-ray Photoelectron Spectroscopy (XPS) were employed to confirm the surface hydrogenation.

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