Characterization of n-type layer by S+ ion implantation in 4H-SiC

ABSTRACTWe investigated the optical, electrical and structural properties of the layer which was implanted with sulfur ion(S+) in 4H-SiC. By using the high temperature ion implantation technique more less residual defects were observed compared with the room temperature ion implantation by Rutherford backscattering spectrometry and channeling(RBS-channeling). After annealing at 1700°C there was no significant difference between the implanted sample and virgin sample in crystallinity within the detection limit of RBS-channeling. From the result of low temperature photoluminescence(LTPL) we could see the photoluminescences, so-called D1 and D2center, originating in the defects formed by ion implantation and post-annealing(∼1700°C) processes and confirmed that their intensities decreased with the increasing of the total dose of S+. The result of Hall effect measurement suggested that the conduction type of S+-implanted layer is n-type and their activation energies were 275meV and 410meV by the fitting of neutrality equation assuming the two activation energies for the hexagonal and cubic lattice sites in 4H-SiC.

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Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

MRS Proceedings ◽

10.1557/proc-97-233 ◽

1987 ◽

Vol 97 ◽

Cited By ~ 11

Author(s):

H. Kong ◽

H. J. Kim ◽

J. A. Edmond ◽

J. W. Palmour ◽

J. Ryu ◽

...

Keyword(s):

Ion Implantation ◽

Elevated Temperatures ◽

Deep Level ◽

Schottky Diodes ◽

Free Carriers ◽

Device Development ◽

Post Annealing ◽

P Type ◽

Sic Films

ABSTRACTMonocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

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Dielectric Function and Defect Structure of CdTe Implanted by 350-keV Bi Ions

MRS Proceedings ◽

10.1557/proc-1123-1123-p05-01 ◽

2008 ◽

Vol 1123 ◽

Author(s):

Peter Petrik ◽

Miklós Fried ◽

Zsolt Zolnai ◽

Nguyen Q. Khánh ◽

Jian Li ◽

...

Keyword(s):

Ion Implantation ◽

Critical Point ◽

Dielectric Function ◽

Defect Structure ◽

Rutherford Backscattering Spectrometry ◽

Atomic Mass ◽

Single Crystalline ◽

Ellipsometric Characterization ◽

Photovoltaic Applications

AbstractIn this work we have developed optical models for the ellipsometric characterization of Bi-implanted CdTe. We have characterized the amount and nature of disorder using Rutherford Backscattering Spectrometry combined with channeling (RBS/C). Samples with a systematically varying degree of disorder were prepared using ion implantation of Bi into single-crystalline CdTe at an energy of 350 keV with increasing doses from 3.75×1013 cm-2 to 6×1014 cm−2. The motivation for use of the high atomic mass Bi ions was that previous studies using lighter ions revealed damage at a low level, even for doses several times higher than the amorphization threshold estimated by simulation [P. Petrik et al., phys. stat. sol. (c) 5, 1358 (2008)]. In contrast, Bi ions create sufficient disorder for investigation of the changes in dielectric function critical point (CP) features in a wider variety of structures from single-crystalline to the disordered state. The CP features can be described by numerous methods starting from the standard CP model, through the parameterization of Adachi [Adachi et al., J. Appl. Phys. 74, 3435 (1993)], and finally to the generalized CP models. The standard CP model has been demonstrated to be a reliable approach for polycrystalline CdTe characterization used in photovoltaic applications [Li et al., phys. stat. sol. (a) 205, 901 (2008)].

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a-SiC:H Doped with Reactive Gases and with Ion Implantation

MRS Proceedings ◽

10.1557/proc-219-793 ◽

1991 ◽

Vol 219 ◽

Cited By ~ 2

Author(s):

F. Demichelis ◽

C. F. Pirri ◽

E. Tresso ◽

G. Della Mea ◽

V. Rigato ◽

...

Keyword(s):

Ion Implantation ◽

Gas Phase ◽

Structural Characterization ◽

Film Growth ◽

Implantation Technique ◽

Boron Doped ◽

Order Of Magnitude ◽

Compositional Disorder ◽

Reactive Gases

ABSTRACTBoron doped a-SiC:H samples have been obtained both by gas phase doping during film growth and by using ion implantation. All the implanted samples were annealed under vacuum to remove the damage introduced by ion implantation and to produce a dopant diffusion. Physical properties deduced by optical, electrical and structural characterization of the two sets of samples have been compared. Ion implantation technique allows a better control of the dopant dose but increases the compositional disorder and the obtained conductivity values are one order of magnitude lower than those of gas doped samples.

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Characterization of Diamond Amorphized by Ion Implantation

MRS Proceedings ◽

10.1557/proc-279-333 ◽

1992 ◽

Vol 279 ◽

Cited By ~ 2

Author(s):

William R. Allen ◽

Eal H. Lee

Keyword(s):

Raman Spectroscopy ◽

Ion Implantation ◽

Rutherford Backscattering Spectrometry ◽

Knoop Hardness ◽

Crystalline Layer ◽

Analysis Techniques ◽

Single Crystal Diamond ◽

Complementary Nature ◽

Bonding Characteristic

ABSTRACTSingle crystal diamond has been implanted at 1 MeV with 2×1020 Ar/m2. Rutherford backscattering spectrometry in a channeled geometry revealed a broad amorphized region underlying a thin, partially crystalline layer. Raman spectroscopy disclosed modifications in the bonding characteristic of the appearance of non-diamond carbon. The complementary nature of the two analysis techniques is demonstrated. The Knoop hardness of the implanted diamond was reduced by implantation.

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Formation and Characterization of Electric Contacts on CVD Diamond Films Prepared by Ion Implantation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.473-474.123 ◽

2005 ◽

Vol 473-474 ◽

pp. 123-128

Author(s):

Gergely Kovách ◽

Hajnalka Csorbai ◽

G. Dobos ◽

Albert Karacs ◽

Gábor Pető

Keyword(s):

Ion Implantation ◽

Photoelectron Spectroscopy ◽

Electronic Device ◽

Chemical Vapor ◽

Diamond Surface ◽

Implantation Technique ◽

Gold Deposition ◽

Characterization Methods ◽

Surface Conduction

Diamond layers have a potential application as the highest band-gap semiconductor for electronic devices. One of the major problems is to form electric contact on the diamond surface useful for an electronic device. This paper shows the properties of the contacts formed by the very promising ion implantation technique. The diamond layers were deposited with Microwave Assisted Chemical Vapor Deposition (MW-CVD) equipped with special extra features like High Voltage Bias and Heated Substrate Holder [1]. Phosphoruos ion implantation and gold deposition were used for the contact formation. This technique resulted graphitization the top of the diamond film and intermixing of gold with the graphite or diamond surface. The properties of the contacts were tested with surface conduction characterization methods, and the properties of the contact to diamond interface was investigated with SIMS (Secondary Ion Mass Spectroscopy ) and XPS (X-ray Photoelectron Spectroscopy).

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Nanoscale Surface Modification of UltraHigh Molecular Weight Polyethylene (UHMWPE) Samples with the W + C Ion Implantation

MRS Proceedings ◽

10.1557/proc-1020-gg07-05 ◽

2007 ◽

Vol 1020 ◽

Author(s):

E. Sokullu Urkac ◽

A. Oztarhan ◽

F. Tihminlioglu ◽

N. Kaya ◽

S. Budak ◽

...

Keyword(s):

Molecular Weight ◽

Ion Implantation ◽

Rutherford Backscattering Spectrometry ◽

Ultrahigh Molecular Weight Polyethylene ◽

Vacuum Arc ◽

Implantation Technique ◽

Metal Vapour ◽

Ultrahigh Molecular Weight ◽

Poly Ethylene ◽

Ultra High Molecular Weight

AbstractIn this work, Ultra High Molecular Weight Poly Ethylene (UHMWPE) samples were implanted with W + C ion by using Metal-Vapour Vacuum Arc (MEVVA) ion implantation technique. Samples were implanted with W and C atoms with a fluence of 1017ion/cm2 and extraction voltage of 30 kV. Mechanism underlies this modification characterized with ATR-FTIR, UV-VIS-NIR Spectrum and Rutherford Backscattering Spectrometry (RBS). Surface morphology of implanted and unimplanted samples were examined in nanoscale with AFM.

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Characterization of MOSFETs formed by gate masked ion implantation technique

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1968.16234 ◽

1968 ◽

Vol 15 (6) ◽

pp. 415-415 ◽

Cited By ~ 1

Author(s):

R.W. Bower ◽

H.G. Dill ◽

K.G. Aubuchon ◽

S.A. Thompson

Keyword(s):

Ion Implantation ◽

Implantation Technique

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Manganese in 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.701 ◽

2010 ◽

Vol 645-648 ◽

pp. 701-704

Author(s):

Margareta K. Linnarsson ◽

Aurégane Audren ◽

Anders Hallén

Keyword(s):

Mass Spectrometry ◽

Heat Treatment ◽

Ion Implantation ◽

Depth Distribution ◽

Secondary Ion Mass Spectrometry ◽

Rutherford Backscattering Spectrometry ◽

Rutherford Backscattering ◽

P Type ◽

Secondary Ion

Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 °C. The depth distribution of manganese is recorded by secondary ion mass spectrometry and Rutherford backscattering spectrometry in the channeling direction is employed for characterization of crystal disorder. After the heat treatment, the crystal order is improved and a substantial rearrangement of manganese is revealed in the implanted region. However, no pronounced manganese diffusion deeper into the sample is recorded.

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Characterization of GaAs solar cells made by ion implantation and rapid thermal annealing using selective photoetching

Journal of Materials Research ◽

10.1557/jmr.1990.1042 ◽

1990 ◽

Vol 5 (5) ◽

pp. 1042-1051 ◽

Cited By ~ 2

Author(s):

W.G.J.H.M. van Sark ◽

J.L. Weyher ◽

L.J. Giling ◽

M. de Potter ◽

M. van Rossum

Keyword(s):

Solar Cells ◽

Ion Implantation ◽

Transition Region ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Gaas Crystal ◽

Gaas Substrates ◽

Type Layer ◽

Good Cell

Shallow n-p GaAs solar cells have been made by implantation of Si into Zn-doped (p-type) GaAs substrates followed by rapid thermal annealing. The structure of the GaAs crystal has been determined by the DSL photoetching method (Diluted Sirtl-like etchants used with Light). It was found that implantation-induced-damage (revealed by DSL as microroughness and craters) was not removed after annealing for energies exceeding 60 keV. This leads to substrates that contain many precipitates, which appears to be disastrous for the fabrication of good solar cells. In addition, good cell performance is hampered by compensation effects in the n-p transition region and in the n-type layer itself.

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A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping

Journal of Nanotechnology ◽

10.1155/2012/635705 ◽

2012 ◽

Vol 2012 ◽

pp. 1-6 ◽

Cited By ~ 4

Author(s):

F. Ruffino ◽

L. Romano ◽

E. Carria ◽

M. Miritello ◽

M. G. Grimaldi ◽

...

Keyword(s):

Ion Implantation ◽

Laser Irradiation ◽

Rutherford Backscattering Spectrometry ◽

Ion Beam ◽

Implantation Technique ◽

Nanosecond Laser ◽

As Doping ◽

Spatial Redistribution ◽

Si Nanostructures ◽

Electronic Doping

The exploitation of Si nanostructures for electronic and optoelectronic devices depends on their electronic doping. We investigate a methodology for As doping of Si nanostructures taking advantages of ion beam implantation and nanosecond laser irradiation melting dynamics. We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO2/Si/SiO2multilayer and its spatial redistribution after annealing processes. As accumulation at the Si/SiO2interfaces was observed by Rutherford backscattering spectrometry in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO2/Si interfaces. A concentration of 1014 traps/cm2has been evaluated. This result opens perspectives for As doping of Si nanoclusters embedded in SiO2since a Si nanocluster of radius 1 nm embedded in SiO2should trap 13 As atoms at the interface. In order to promote the As incorporation in the nanoclusters for an effective doping, an approach based on ion implantation and nanosecond laser irradiation was investigated. Si nanoclusters were produced in SiO2layer. After As ion implantation and nanosecond laser irradiation, spectroscopic ellipsometry measurements show nanoclusters optical properties consistent with their effective doping.

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