IVB-4 Characterization and two-dimensional simulation of impact ionization current in MOSFET's between 77 and 300 K
1985 ◽
Vol 32
(11)
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pp. 2543-2543
2015 ◽
Vol 821-823
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pp. 640-643
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Keyword(s):
2006 ◽
Vol 53
(9)
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pp. 2364-2369
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2003 ◽
Vol 125
(17)
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pp. 5227-5235
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1991 ◽
Vol 34
(4)
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pp. 397-401
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2002 ◽
Vol 42
(1-2)
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pp. 13-32
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