IVB-4 Characterization and two-dimensional simulation of impact ionization current in MOSFET's between 77 and 300 K

1985 ◽  
Vol 32 (11) ◽  
pp. 2543-2543
Author(s):  
A.K. Henning ◽  
J.D. Plummer ◽  
N. Chan
2015 ◽  
Vol 821-823 ◽  
pp. 640-643 ◽  
Author(s):  
Kazuhiro Mochizuki ◽  
Hiroyuki Okino ◽  
Hiroyuki Matsushima ◽  
Yoshiaki Toyota

4H-SiC (0001) p-n diodes terminated with a floating-field ring were found to emit light at breakdown in the opposite direction to that of substrate misorientation when the diodes were fabricated by aluminum implantation and dry-oxidation passivation. Two-dimensional simulation revealed that such non-uniform breakdown was mainly attributable to the asymmetric lateral straggling of implanted aluminum acceptors, rather than the anisotropic nature of the impact ionization coefficient.


2018 ◽  
Author(s):  
Haibo Li ◽  
Maocheng Tian ◽  
Xiaohang Qu ◽  
Min Wei

AIP Advances ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 055209
Author(s):  
Yong Che ◽  
Qing Zang ◽  
Xiaofeng Han ◽  
Shumei Xiao ◽  
Kai Huang ◽  
...  

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