Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring
2015 ◽
Vol 821-823
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pp. 640-643
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Keyword(s):
4H-SiC (0001) p-n diodes terminated with a floating-field ring were found to emit light at breakdown in the opposite direction to that of substrate misorientation when the diodes were fabricated by aluminum implantation and dry-oxidation passivation. Two-dimensional simulation revealed that such non-uniform breakdown was mainly attributable to the asymmetric lateral straggling of implanted aluminum acceptors, rather than the anisotropic nature of the impact ionization coefficient.
Keyword(s):
2006 ◽
Vol 51
(1)
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pp. 13-18
Keyword(s):
2003 ◽
Vol 18
(7)
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pp. 689-692
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Keyword(s):
1985 ◽
Vol 32
(11)
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pp. 2543-2543
2013 ◽
Vol 91
(6)
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pp. 483-485
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Keyword(s):