Comparing Methods for Computing the Electrical Super Conducting Property with Microstructure of Electron Beam Welded High Purity Niobium

2021 ◽  
pp. 1-1
Author(s):  
Kalyan Das ◽  
Prabhat Mandal ◽  
Manojit Ghosh
Keyword(s):  
Electron Beam ◽  
High Purity ◽  
Conducting Property ◽  
Super Conducting

High-purity 3D nano-objects grown by focused-electron-beam induced deposition

2016 ◽  
Vol 27 (35) ◽  
pp. 355301 ◽  
Author(s):  
Rosa Córdoba ◽  
Nidhi Sharma ◽  
Sebastian Kölling ◽  
Paul M Koenraad ◽  
Bert Koopmans
Keyword(s):  
Electron Beam ◽  
High Purity ◽  
Electron Beam Induced Deposition

scholarly journals HIGH-PURITY SHAPE CASTING WITH AN ELECTRON-BEAM FURNACE.

1967 ◽  
Author(s):  
C.W. Dean ◽  
R.E. McDonald
Keyword(s):  
Electron Beam ◽  
High Purity

scholarly journals High-resolution, High-purity Calix[n]arene Electron Beam Resist.

2000 ◽  
Vol 13 (3) ◽  
pp. 413-417 ◽  
Author(s):  
Yukinori Ochiai ◽  
Shoko Manako ◽  
Hiromasa Yamamoto ◽  
Takahiro Teshima ◽  
Jun-ichi Fujita ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
High Purity

Structural features of high purity silicon prepared by electron-beam refining of metallurgical-grade silicon

Metallurgist ◽  
2011 ◽  
Vol 55 (7-8) ◽  
pp. 607-614 ◽  
Author(s):  
V. A. Osokin ◽  
V. A. Panibratskii ◽  
P. A. Shpak ◽  
E. L. Piyuk
Keyword(s):  
Electron Beam ◽  
High Purity ◽  
Structural Features ◽  
Metallurgical Grade Silicon ◽  
High Purity Silicon ◽  
Grade Silicon

High-purity cobalt nanostructures grown by focused-electron-beam-induced deposition at low current

2010 ◽  
Vol 87 (5-8) ◽  
pp. 1550-1553 ◽  
Author(s):  
R. Córdoba ◽  
J. Sesé ◽  
J.M. De Teresa ◽  
M.R. Ibarra
Keyword(s):  
Electron Beam ◽  
High Purity ◽  
Electron Beam Induced Deposition ◽  
Cobalt Nanostructures

scholarly journals Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs

1993 ◽  
Vol 46 (2) ◽  
pp. 317 ◽  
Author(s):  
KSA Butcher ◽  
D Alexiev ◽  
TL Tansley
Keyword(s):  
Electron Beam ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity ◽  
Minority Carrier ◽  
Induced Current ◽  
Carrier Diffusion ◽  
Nuclear Science ◽  
Electron Beam Induced Current ◽  
P Type

Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported.

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