High Power-Supply-Rejection (PSR) Current-Mode Low-Dropout (LDO) Regulator

2010 ◽  
Vol 57 (11) ◽  
pp. 868-873 ◽  
Author(s):  
Amit P. Patel ◽  
Gabriel A. Rincon-Mora
2016 ◽  
Vol 13 (24) ◽  
pp. 20160665-20160665
Author(s):  
Khurram Javed ◽  
Jeongjin Roh

2014 ◽  
Vol 989-994 ◽  
pp. 3236-3239 ◽  
Author(s):  
Yi Tsun Chang ◽  
Yu Da Shiau ◽  
Po Chun Wu ◽  
Ren Hao Xue ◽  
Po Yu Cheng

This study develops a low dropout regulator linear regulator, characterized by a high power supply rejection ratio using ultra-low output resistance buffer and two-stage error amplifiers. The high power supply rejection is based on a closed-loop LDO regulator. The ultra-low output resistance buffer achieves ultra-low output impedance with dual shunt feedback loops, subsequently improving load and line regulations, as well as the transient response for low voltage applications. The proposed LDO regulator linear regulator functions under an input voltage of 1.8~3V, and the output voltage can be maintained at around 1.27V. Moreover, its output voltage is independent of input voltage. The proposed regulator is applicable to light-emitting diode driver integrated circuits. The layout chip area of the LDO linear regulator is 21.5μm × 42.6μm.


2011 ◽  
Vol 20 (01) ◽  
pp. 1-13 ◽  
Author(s):  
CHENCHANG ZHAN ◽  
WING-HUNG KI

A CMOS low quiescent current low dropout regulator (LDR) with high power supply rejection (PSR) and without large output capacitor is proposed for system-on-chip (SoC) power management applications. By cascoding a power NMOS with the PMOS pass transistor, high PSR over a wide frequency range is achieved. The gate-drive of the cascode NMOS is controlled by an auxiliary LDR that draws only 1 μA from a small charge pump, thus helping in reducing the quiescent current. Adaptive biasing is employed for the multi-stage error amplifier of the core LDR to achieve high loop gain hence high PSR at low frequency, low quiescent current at light load and high bandwidth at heavy load. A prototype of the proposed high-PSR LDR is fabricated using a standard 0.35 μm CMOS process, occupying an active area of 0.066 mm2. The lowest supply voltage is 1.6 V and the preset output voltage is 1.2 V. The maximum load current is 10 mA. The measured worst-case PSR at full load without using large output capacitor is -22.7 dB up to 60 MHz. The line and load regulations are 0.25 mV/V and 0.32 mV/mA, respectively.


2017 ◽  
Vol 68 ◽  
pp. 7-13 ◽  
Author(s):  
Lidan Wang ◽  
Chenchang Zhan ◽  
Junyao Tang ◽  
Shuangxing Zhao ◽  
Guigang Cai ◽  
...  

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