High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTE

2008 ◽  
Vol 55 (8) ◽  
pp. 1894-1898 ◽  
Author(s):  
Hyung-Seok Lee ◽  
Martin Domeij ◽  
Reza Ghandi ◽  
Carl-Mikael Zetterling ◽  
Mikael Ostling
Keyword(s):  
Current Gain ◽  
High Current ◽  
Extrinsic Base

A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure

2018 ◽  
Vol 924 ◽  
pp. 625-628
Author(s):  
You Run Zhang ◽  
Wen Wang ◽  
Ming Ye Li ◽  
Fei Guo ◽  
Jun Tao Li ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Surface Recombination ◽  
High Gain ◽  
Base Layer ◽  
Current Gain ◽  
The Novel ◽  
High Current ◽  
Novel Structure ◽  
P Type ◽  
Extrinsic Base

This paper proposes a novel high-gain 4H-SiC BJT structure with a p-type epitaxial layer on top of the extrinsic base layer. The current gain of the novel structure is improved by 140% compared with the conventional one by the simulator tool with the number of reasonable interface traps, which could be ascribed to the epitaxial layer to reduce the surface recombination in the extrinsic base. The process to fabricate this structure is also proposed in the paper.

High Current Gain Triple Ion Implanted 4H-SiC BJT

2009 ◽  
Vol 1195 ◽  
Author(s):  
Taku Tajima ◽  
Tadashi Nakamura ◽  
Yuki Watabe ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
Ion Implantation ◽  
Current Gain ◽  
High Current ◽  
Extrinsic Base ◽  
Triple Ion ◽  
Ion Implanted

AbstractWe investigated triple ion implanted 4H-SiC BJT with etched extrinsic base regions. To remove the defects induced by ion implantation between emitter and base regions, the characteristics of triple ion implanted 4H-SiC BJT were significantly improved. Maximum common current gain was improved from 1.7 to 7.5.

scholarly journals Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control

Sensors ◽  
2016 ◽  
Vol 16 (1) ◽  
pp. 74 ◽  
Author(s):  
Sang-Won Lee ◽  
Seung-Hwan Cha ◽  
Kyung-Jae Choi ◽  
Byoung-Ho Kang ◽  
Jae-Sung Lee ◽  
...  
Keyword(s):  
Zno Nanoparticles ◽  
Dark Current ◽  
Current Gain ◽  
High Current ◽  
Uv Photodetector

High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors

1988 ◽  
Vol 9 (10) ◽  
pp. 524-526 ◽  
Author(s):  
R.N. Nottenburg ◽  
Y.-K. Chen ◽  
M.B. Panish ◽  
R. Hamm ◽  
D.A. Humphrey
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
High Current

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

scholarly journals Power lateral pnp transistor operating with high current density in irradiated voltage regulator

2013 ◽  
Vol 28 (2) ◽  
pp. 146-157 ◽  
Author(s):  
Vladimir Vukic ◽  
Predrag Osmokrovic
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Positive Influence ◽  
Radiation Hardness ◽  
Current Gain ◽  
Voltage Regulator ◽  
Interface Traps ◽  
High Current ◽  
Oxide Trapped Charge ◽  
Trapped Charge

The operation of power lateral pnp transistors in gamma radiation field was examined by detection of the minimum dropout voltage on heavily loaded low-dropout voltage regulators LM2940CT5, clearly demonstrating their low radiation hardness, with unacceptably low values of output voltage and collector-emitter voltage volatility. In conjunction with previous results on base current and forward emitter current gain of serial transistors, it was possible to determine the positive influence of high load current on a slight improvement of voltage regulator LM2940CT5 radiation hardness. The high-current flow through the wide emitter aluminum contact of the serial transistor above the isolation oxide caused intensive annealing of the positive oxide-trapped charge, leading to decrease of the lateral pnp transistor's current gain, but also a more intensive recovery of the small-signal npn transistors in the control circuit. The high current density in the base area of the lateral pnp transistor immediately below the isolation oxide decreased the concentration of negative interface traps. Consequently, the positive influence of the reduced concentration of the oxide-trapped charge on the negative feedback reaction circuit, together with the favourable effect of reduced interface traps concentration, exceeded negative influence of the annealed oxide-trapped charge on the serial pnp transistor's forward emitter current gain.

Sign in / Sign up

Export Citation Format

Share Document