Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications

Submillimeter Wave ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Recessed Gate ◽

Length Scaling

Gate Length Scaling Effect on High-Electron Mobility Transistors Devices Using AlGaN/GaN and AlInN/AlN/GaN Heterostructures

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.8726 ◽

2014 ◽

Vol 14 (8) ◽

pp. 6243-6246 ◽

Cited By ~ 2

Author(s):

S. Y. Liao ◽

C. C. Lu ◽

T. Chang ◽

C. F. Huang ◽

C. H. Cheng ◽

...

Keyword(s):

Electron Mobility ◽

Gate Length ◽

High Electron ◽

Scaling Effect ◽

High Electron Mobility ◽

Length Scaling

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Dry etching bilayer and trilevel resist systems for submicron gate length GaAs based high electron mobility transistors for power and digital applications

10.1116/1.585949 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2949 ◽

Cited By ~ 9

Author(s):

F. Ren

Keyword(s):

Electron Mobility ◽

Dry Etching ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Numerical performance evaluation of AlGaN/GaN high electron mobility transistors including gate length effects

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2009.04.026 ◽

2009 ◽

Vol 41 (8) ◽

pp. 1517-1521 ◽

Cited By ~ 6

Author(s):

Z. Hashempour ◽

A. Asgari ◽

S. Nikipar ◽

M. Abolhasani ◽

M. Kalafi

Keyword(s):

Performance Evaluation ◽

Electron Mobility ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Numerical Performance ◽

Length Effects

Electrical features in $$\hbox {AlGaN}/\hbox {GaN}$$ AlGaN / GaN high electron mobility transistors with recessed gate and undoped region in the barrier

Pramana ◽

10.1007/s12043-018-1715-x ◽

2019 ◽

Vol 92 (4) ◽

Author(s):

S M Razavi ◽

S H Zahiri ◽

S Karimi

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2255 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2255-2258 ◽

Cited By ~ 55

Author(s):

Akira Endoh ◽

Yoshimi Yamashita ◽

Keiji Ikeda ◽

Masataka Higashiwaki ◽

Kohki Hikosaka ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Rf Performance ◽

Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure

10.7567/ssdm.2011.a-1-4 ◽

2011 ◽

Author(s):

A. Imai ◽

K. Yamanaka ◽

Y. Suzuki ◽

T. Nanjo ◽

M. Suita ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Current Collapse ◽

Effect of Gate Length on the Electrical Characteristics of Nanoelectronic AlGaN/GaN High Electron Mobility Transistors to Fabricate the Biomedical Sensors in Nanoelectronics

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2018.2361 ◽

2018 ◽

Vol 13 (8) ◽

pp. 1123-1127 ◽

Cited By ~ 1

Author(s):

Sanjib Kalita ◽

Subhadeep Mukhopadhyay

Keyword(s):

Electron Mobility ◽

Gate Length ◽

High Electron ◽

Electrical Characteristics ◽

High Electron Mobility ◽

Biomedical Sensors ◽

Electron Mobility Transistors

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

Performance-improved normally-off AlGaN/GaN high-electron mobility transistors with a designed p-GaN area under the recessed gate

10.1109/icsict.2016.7998701 ◽

2016 ◽

Author(s):

Huolin Huang ◽

Zhonghao Sun ◽

Zifeng Zhang ◽

Rensheng Shen ◽

Y.C. Liang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3358 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3358-3363

Author(s):

Jong-Won Lim ◽

Ho-Kyun Ahn ◽

Hong-Gu Ji ◽

Woo-Jin Chang ◽

Jae-Kyoung Mun ◽

...

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Recessed Gate ◽

Microwave Characteristics

High-Power-Density 0.25 µm Gate-Length AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating 6H–SiC Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.13 ◽

2006 ◽

Vol 45 (1A) ◽

pp. 13-17 ◽

Cited By ~ 17

Author(s):

J.-W. Lee ◽

V. Kumar ◽

I. Adesida

Keyword(s):

Power Density ◽

High Power ◽

Electron Mobility ◽

Gate Length ◽

High Electron ◽

High Power Density ◽

High Electron Mobility ◽

Electron Mobility Transistors