High-Voltage Electron Injection Enhanced TC-LIGBT on 1.5- $\mu \text{m}$ -Thin SOI Layer for Reducing the Forward Voltage Drop

In this paper, a technology computer-aided design (TCAD) model of a silicon carbide (SiC) insulated-gate bipolar transistor (IGBT) has been calibrated against previously reported experimental data. The calibrated TCAD model has been used to predict the static performance of theoretical SiC IGBTs with ultra-high blocking voltage capabilities in the range of 20-50 kV. The simulation results of transfer characteristics, IC-VGE, forward characteristics, IC-VCE, and blocking voltage characteristics are studied. The threshold voltage is approximately 5 V, and the forward voltage drop is ranging from VF = 4.2-10.0 V at IC = 20 A, using a charge carrier lifetime of τA = 20 μs. Furthermore, the forward voltage drop impact for different process dependent parameters (i.e., carrier lifetimes, mobility/scattering and trap related defects) and junction temperature are investigated in a parametric sensitivity analysis. The wide-range simulation results may be used as an input to facilitate high power converter design and evaluation. In this case, the TCAD simulated static characteristics of SiC IGBTs is compared to silicon (Si) IGBTs in a modular multilevel converter in a general high-power application. The results indicate several benefits and lower conduction energy losses using ultra-high voltage SiC IGBTs compared to Si IGBTs.

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13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.855 ◽

2014 ◽

Vol 778-780 ◽

pp. 855-858 ◽

Cited By ~ 4

Author(s):

Dai Okamoto ◽

Yasunori Tanaka ◽

Tomonori Mizushima ◽

Mitsuru Yoshikawa ◽

Hiroyuki Fujisawa ◽

...

Keyword(s):

Power System ◽

High Voltage ◽

Light Emission ◽

Voltage Drop ◽

High Current ◽

Forward Voltage ◽

Pin Diodes ◽

Current Switching ◽

Forward Voltage Drop

We successfully fabricated 13-kV, 20-A, 8 mm × 8 mm, drift-free 4H-SiC PiN diodes. The fabricated diodes exhibited breakdown voltages that exceeded 13 kV, a forward voltage drop of 4.9–5.3 V, and an on-resistance (RonAactive) of 12 mW·cm2. The blocking yield at 10 kV on a 3-in wafer exceeded 90%. We investigated failed devices using Candela defect maps and light-emission images and found that a few devices failed because of large defects on the chip. We also demonstrated that the fabricated diodes can be used in conducting high-voltage and high-current switching tests.

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Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.1038 ◽

2014 ◽

Vol 778-780 ◽

pp. 1038-1041 ◽

Cited By ~ 9

Author(s):

Tadayoshi Deguchi ◽

Shuji Katakami ◽

Hiroyuki Fujisawa ◽

Kensuke Takenaka ◽

Hitoshi Ishimori ◽

...

Keyword(s):

Ion Implantation ◽

High Voltage ◽

Room Temperature ◽

Voltage Drop ◽

Temperature Stability ◽

Bipolar Transistors ◽

Forward Voltage ◽

Current Spreading ◽

Blocking Voltage ◽

Forward Voltage Drop

High-voltage SiC p-channel insulated-gate bipolar transistors (p-IGBT) utilizing current-spreading layer (CSL) formed by ion implantation are fabricated and their properties characterized. A high blocking voltage of 15 kV is achieved at room temperature by optimizing the JFET length. An ampere-class p-IGBT exhibited a low forward voltage drop of 8.5 V at 100 A/cm2 and a low differential specific on-resistance of 33 mΩ cm2 at 250 °C, while these values were high at room temperature. For further reduction of the forward voltage drop in the on-state and temperature stability, the temperature dependence of the JFET effect and carrier lifetime in p-IGBTs are investigated. Optimization of the JFET length using an epitaxial CSL, instead of applying ion implantation and lifetime enhancement, could lead to a further reduction of the forward voltage drop.

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Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.568 ◽

2018 ◽

Vol 924 ◽

pp. 568-572 ◽

Cited By ~ 1

Author(s):

Arash Salemi ◽

Hossein Elahipanah ◽

Carl Mikael Zetterling ◽

Mikael Östling

Keyword(s):

Leakage Current ◽

High Voltage ◽

Voltage Drop ◽

Device Simulation ◽

Forward Voltage ◽

Pin Diodes ◽

Low Leakage ◽

Low Leakage Current ◽

Forward Voltage Drop ◽

Ultra High Voltage

Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.

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High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.121301 ◽

2015 ◽

Vol 54 (12) ◽

pp. 121301 ◽

Cited By ~ 1

Author(s):

Doohyung Cho ◽

Seulgi Sim ◽

Kunsik Park ◽

Jongil Won ◽

Sanggi Kim ◽

...

Keyword(s):

High Voltage ◽

Voltage Drop ◽

Forward Voltage ◽

Forward Voltage Drop ◽

Schottky Rectifier

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Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.135 ◽

2014 ◽

Vol 778-780 ◽

pp. 135-138 ◽

Cited By ~ 9

Author(s):

Tetsuya Miyazawa ◽

Shi Yang Ji ◽

Kazutoshi Kojima ◽

Yuuki Ishida ◽

Koji Nakayama ◽

...

Keyword(s):

Epitaxial Growth ◽

High Voltage ◽

Growth Process ◽

Carrier Lifetime ◽

Minority Carrier ◽

Voltage Drop ◽

Minority Carrier Lifetime ◽

Forward Voltage ◽

Forward Voltage Drop ◽

Very High

The epitaxial growth of thick multi-layer 4H-SiC to fabricate very high-voltage C-face n-channel IGBTs is demonstrated using 3-inch diameter wafers. We employ an inverted-growth process, which enables the on-state voltage of resultant IGBTs to be reduced. Furthermore a long minority carrier lifetime (> 10 μs) and a low-resistance p+epilayer can reduce the forward voltage drop of the IGBTs. The small forward voltage drop is demonstrated particularly at high temperatures by fabricating and characterizing simple pin diodes using the epi-wafer.

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High Voltage Electron Microscopy of Ion-Milled Dental Enamel

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100050317 ◽

1974 ◽

Vol 32 ◽

pp. 60-61

Author(s):

L. D. Ackerman ◽

S. H. Y. Wei

Keyword(s):

Electron Microscopy ◽

High Voltage ◽

Third Molar ◽

Polarized Light ◽

Dental Enamel ◽

Longitudinal Section ◽

Ion Milling ◽

High Voltage Electron Microscopy ◽

Voltage Electron ◽

High Voltage Electron

Mature human dental enamel has presented investigators with several difficulties in ultramicrotomy of specimens for electron microscopy due to its high degree of mineralization. This study explores the possibility of combining ion-milling and high voltage electron microscopy as a means of circumventing the problems of ultramicrotomy.A longitudinal section of an extracted human third molar was ground to a thickness of about 30 um and polarized light micrographs were taken. The specimen was attached to a single hole grid and thinned by argon-ion bombardment at 15° incidence while rotating at 15 rpm. The beam current in each of two guns was 50 μA with an accelerating voltage of 4 kV. A 20 nm carbon coating was evaporated onto the specimen to prevent an electron charge from building up during electron microscopy.

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Three-Dimensional Visualization of the T-System of Frog Muscle Using High Voltage Electron Microscopy and a Lanthanum Stain

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100080286 ◽

1977 ◽

Vol 35 ◽

pp. 570-571 ◽

Cited By ~ 2

Author(s):

Lee D. Peachey ◽

Clara Franzini-Armstrong

Keyword(s):

Electron Microscopy ◽

High Voltage ◽

Three Dimensional ◽

Biological Tissues ◽

High Voltage Electron Microscopy ◽

Transverse Tubular System ◽

Peroxidase Reaction ◽

Voltage Electron ◽

High Voltage Electron ◽

T System

The effective study of biological tissues in thick slices of embedded material by high voltage electron microscopy (HVEM) requires highly selective staining of those structures to be visualized so that they are not hidden or obscured by other structures in the image. A tilt pair of micrographs with subsequent stereoscopic viewing can be an important aid in three-dimensional visualization of these images, once an appropriate stain has been found. The peroxidase reaction has been used for this purpose in visualizing the T-system (transverse tubular system) of frog skeletal muscle by HVEM (1). We have found infiltration with lanthanum hydroxide to be particularly useful for three-dimensional visualization of certain aspects of the structure of the T- system in skeletal muscles of the frog. Specifically, lanthanum more completely fills the lumen of the tubules and is denser than the peroxidase reaction product.

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