High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer
2015 ◽
Vol 54
(12)
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pp. 121301
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2020 ◽
Vol 1004
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pp. 911-916
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2014 ◽
Vol 778-780
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pp. 855-858
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2014 ◽
Vol 778-780
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pp. 1038-1041
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2018 ◽
Vol 924
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pp. 568-572
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2019 ◽
Vol 40
(7)
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pp. 1040-1043
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2014 ◽
Vol 778-780
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pp. 135-138
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2016 ◽
Vol 63
(12)
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pp. 4873-4879
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2012 ◽
Vol 717-720
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pp. 1059-1064
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