A Numerical Simulation of C3N Nanoribbon-Based Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2883298 ◽

2019 ◽

Vol 66 (2) ◽

pp. 1087-1091 ◽

Author(s):

Tiancheng Zhang ◽

Hui Zeng ◽

Dazhi Ding ◽

R. S. Chen

Keyword(s):

Numerical Simulation ◽

Field Effect ◽

Field Effect Transistors

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Numerical simulation of ballistic Carbon Nanotube Field-Effect Transistors

2008 2nd IEEE International Nanoelectronics Conference ◽

10.1109/inec.2008.4585578 ◽

2008 ◽

Author(s):

M. Yaghuti ◽

K. Saghafi

Keyword(s):

Numerical Simulation ◽

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors

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Numerical Simulation of Field Effect Transistors in 4H- and 6H-SiC

Journal of Wide Bandgap Materials ◽

10.1106/152451102024432 ◽

2002 ◽

Vol 9 (4) ◽

pp. 293-305 ◽

Author(s):

H.-E. Nilsson ◽

K. Bertilsson ◽

M. Hjelm ◽

E. Dubaric

Keyword(s):

Numerical Simulation ◽

Field Effect ◽

Field Effect Transistors

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Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures

Chinese Physics ◽

10.1088/1009-1963/15/3/032 ◽

2006 ◽

Vol 15 (3) ◽

pp. 636-640 ◽

Author(s):

Chang Yuan-Cheng ◽

Zhang Yi-Men ◽

Zhang Yu-Ming

Keyword(s):

Numerical Simulation ◽

High Temperatures ◽

Field Effect ◽

Field Effect Transistors ◽

Heterojunction Field Effect Transistors

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Numerical Simulation of Contact Resistance in Organic Field-Effect Transistors

10.7567/ssdm.2010.p-10-15 ◽

2010 ◽

Author(s):

S. Nishigami ◽

T. Nagase ◽

T. Kobayashi ◽

H. Naito

Keyword(s):

Numerical Simulation ◽

Contact Resistance ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors

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Numerical simulation of lateral diffused metal oxide semiconductor field effect transistors: A novel technique for electric field control to improve breakdown voltage

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2015.02.027 ◽

2015 ◽

Vol 34 ◽

pp. 230-235 ◽

Author(s):

Ali A. Orouji ◽

Amin Pak

Keyword(s):

Numerical Simulation ◽

Electric Field ◽

Metal Oxide ◽

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Novel Technique ◽

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Numerical simulation of field effect transistors in 4H and 6H-SiC

3rd International Conference Novel Applications of Wide Bandgap Layers Abstract Book (Cat No 01EX500) WBL-01 ◽

10.1109/wbl.2001.946605 ◽

2002 ◽

Author(s):

H.E. Nilsson ◽

K. Bertilsson ◽

E. Dubaric ◽

M. Hjelm

Keyword(s):

Numerical Simulation ◽

Field Effect ◽

Field Effect Transistors

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Numerical simulation of vertical tunnelling field-effect transistors charge-trapping memory with TCAD tools

Semiconductor Science and Technology ◽

10.1088/1361-6641/abe0f6 ◽

2021 ◽

Author(s):

Yang Cao ◽

Guoliang Tian ◽

Sandip Majumdar ◽

Jinshun Bi ◽

Kai Xi ◽

...

Keyword(s):

Numerical Simulation ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Charge Trapping Memory

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Numerical Simulation of Static Noise Margin for a Six-Transistor Static Random Access Memory Cell with 32nm Fin-Typed Field Effect Transistors

Computational Science – ICCS 2007 - Lecture Notes in Computer Science ◽

10.1007/978-3-540-72590-9_33 ◽

2007 ◽

pp. 227-234

Author(s):

Yiming Li ◽

Chih-Hong Hwang ◽

Shao-Ming Yu

Keyword(s):

Numerical Simulation ◽

Field Effect ◽

Field Effect Transistors ◽

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Static Random Access Memory ◽

Access Memory ◽

Noise Margin ◽

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Numerical simulation of transport properties in InAs/Si heterojunction nanowire tunneling field effect transistors

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218605 ◽

2012 ◽

Author(s):

Y. Miyoshi ◽

M. Ogawa ◽

S. Souma ◽

H. Nakamura

Keyword(s):

Numerical Simulation ◽

Transport Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981490 ◽

1981 ◽

Vol 42 (C4) ◽

pp. C4-423-C4-432 ◽

Author(s):

P. G. Le Comber ◽

A. J. Snell ◽

K. D. Mackenzie ◽

W. E. Spear

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

Liquid Crystal Displays ◽

Logic Circuits ◽

Integrated Logic

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