A Fully Integrated HF-Band Passive RFID Tag IC Using 0.18-$\mu\hbox{m}$ CMOS Technology for Low-Cost Security Applications

2011 ◽  
Vol 58 (6) ◽  
pp. 2531-2540 ◽  
Author(s):  
Jong-Wook Lee ◽  
Duong Huynh Thai Vo ◽  
Quoc-Hung Huynh ◽  
Sang Hoon Hong
Keyword(s):  
Low Cost ◽  
Cmos Technology ◽  
Fully Integrated ◽  
Rfid Tag ◽  
Security Applications ◽  
Passive Rfid ◽  
Tag Ic

scholarly journals A single-poly EEPROM with low leakage charge pump and peripheral circuits for passive RFID tag in a standard CMOS technology

2017 ◽  
Vol 14 (10) ◽  
pp. 20170315-20170315
Author(s):  
Fan Yang ◽  
Yongan Zheng ◽  
Chunguang Wang ◽  
Ling Shen ◽  
Huailin Liao
Keyword(s):  
Charge Pump ◽  
Cmos Technology ◽  
Rfid Tag ◽  
Low Leakage ◽  
Single Poly Eeprom ◽  
Passive Rfid

scholarly journals A Fully Integrated CMOS Security-Enhanced Passive RFID Tag

ETRI Journal ◽  
2014 ◽  
Vol 36 (1) ◽  
pp. 141-150 ◽  
Author(s):  
Suna Choi ◽  
Hyunseok Kim ◽  
Sangyeon Lee ◽  
Kanbok Lee ◽  
Heyungsub Lee
Keyword(s):  
Fully Integrated ◽  
Rfid Tag ◽  
Passive Rfid

scholarly journals Low-Power Fully Integrated CMOS DTV Tuner Front-End for ATSC Terrestrial Broadcasting

VLSI Design ◽  
2007 ◽  
Vol 2007 ◽  
pp. 1-13 ◽  
Author(s):  
Jianhong Xiao ◽  
Guang Zhang ◽  
Tianwei Li ◽  
Jose Silva-Martinez
Keyword(s):  
Low Power ◽  
Low Cost ◽  
Building Blocks ◽  
Cmos Technology ◽  
Digital Television ◽  
Main Stream ◽  
Image Rejection ◽  
Fully Integrated ◽  
Front End ◽  
Image Rejection Ratio

A low-cost low-power DTV tuner for current digital television application is described. In order to increase integration level and reduce power consumption for off-air DTV tuner application, an SAW-filterless tuner front-end architecture is adopted. As a part of the concept, key building blocks for this architecture are implemented on a main stream 0.35 μm CMOS technology. Experimental measurements for the prototype chip validate the system architecture; the prototype consumes 300 mw and achieves 45 dB of image rejection ratio within the entire 750 MHz frequency band.

scholarly journals A Fully-Integrated 180 nm CMOS 1.2 V Low-Dropout Regulator for Low-Power Portable Applications

Electronics ◽  
2021 ◽  
Vol 10 (17) ◽  
pp. 2108
Author(s):  
Jorge Pérez-Bailón ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Low Voltage ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
High Gain ◽  
Oxide Semiconductor ◽  
Fully Integrated ◽  
Low Voltage Operation ◽  
Error Amplifier ◽  
Ldo Regulator

This paper presents the design and postlayout simulation results of a capacitor-less low dropout (LDO) regulator fully integrated in a low-cost standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology which regulates the output voltage at 1.2 V from a 3.3 to 1.3 V battery over a –40 to 120°C temperature range. To meet with the constraints of system-on-chip (SoC) battery-operated devices, ultralow power (Iq = 8.6 µA) and minimum area consumption (0.109 mm2) are maintained, including a reference voltage Vref = 0.4 V. It uses a high-gain dynamically biased folded-based error amplifier topology optimized for low-voltage operation that achieves an enhanced regulation-fast transient performance trade-off.

A Low Power and Low LIR Regulator for Passive RFID Tag in 0.18 μm CMOS Technology

2015 ◽  
Vol 61 (4) ◽  
pp. 372-381 ◽  
Author(s):  
Sajad Nejadhasan ◽  
Ebrahim Abiri ◽  
Rezvan Dastanian ◽  
Mohammad Reza Salehi
Keyword(s):  
Low Power ◽  
Cmos Technology ◽  
Rfid Tag ◽  
Passive Rfid

Design of Fully Integrated Impedimetric CMOS Biosensor for DNA Detection

2014 ◽  
Vol 925 ◽  
pp. 524-528
Author(s):  
Vinny Lam Siu Fan ◽  
Yusmeeraz Binti Yusof
Keyword(s):  
Dynamic Range ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
High Gain ◽  
Oxide Semiconductor ◽  
Impedance Change ◽  
Readout Circuit ◽  
Label Free ◽  
Fully Integrated

This paper described a label-free and fully integrated impedimetric biosensor using standard Complementary Metal Oxide Semiconductor (CMOS) technology to measure both capacitance and resistance of the electrode-electrolyte interface. Conventional impedance biosensors usually use bulky and expensive instruments to monitor the impedance change. This paper demonstrates a low power, high gain and low cost impedance readout circuit design for detecting the biomolecular interactions of deoxyribonucleic acid (DNA) strands at the electrode surface. The proposed biosensor circuit is composed of a transimpedance amplifier (TIA) with two quadrature phase mixers and finally integrated with 5μm x 5μm microelectrode based on 0.18μm Silterra CMOS technology process with 1.8V supply. The output value of the readout circuit is used to estimate the amplitude and phase of the measured admittance. The developed TIA can achieve a gain of 88.6dB up to a frequency of 50MHz. It also has very good linearity up to 2.7mA and the overall dynamic range is approximately 90dB.

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