A Test IC for Wafer-Level Characterization of an IntraCMOS-MEMS Fabrication Process

2022 ◽  
Vol 20 (1) ◽  
pp. 108-116
Author(s):  
Monico Linares Aranda ◽  
Luis Hernandez Martinez ◽  
Javier De la Hidalga Wade
Keyword(s):  
Fabrication Process ◽  
Wafer Level ◽  
Mems Fabrication

scholarly journals Lead-Free LiNbO3 Thick Film MEMS Kinetic Cantilever Beam Sensor/Energy Harvester

Sensors ◽  
2022 ◽  
Vol 22 (2) ◽  
pp. 559
Author(s):  
Gabriel Barrientos ◽  
Giacomo Clementi ◽  
Carlo Trigona ◽  
Merieme Ouhabaz ◽  
Ludovic Gauthier-Manuel ◽  
...  
Keyword(s):  
Electrical Energy ◽  
Open Circuit ◽  
Fabrication Process ◽  
Lead Free ◽  
Electromechanical Transduction ◽  
Mems Fabrication ◽  
Circuit Output ◽  
Theoretical Considerations ◽  
Modelling Simulation

In this paper, we present integrated lead-free energy converters based on a suitable MEMS fabrication process with an embedded layer of LiNbO3. The fabrication technology has been developed to realize micromachined self-generating transducers to convert kinetic energy into electrical energy. The process proposed presents several interesting features with the possibility of realizing smaller scale devices, integrated systems, miniaturized mechanical and electromechanical sensors, and transducers with an active layer used as the main conversion element. When the system is fabricated in the typical cantilever configuration, it can produce a peak-to-peak open-circuit output voltage of 0.208 V, due to flexural deformation, and a power density of 1.9 nW·mm−3·g−2 at resonance, with values of acceleration and frequency of 2.4 g and 4096 Hz, respectively. The electromechanical transduction capability is exploited for sensing and power generation/energy harvesting applications. Theoretical considerations, simulations, numerical analyses, and experiments are presented to show the proposed LiNbO3-based MEMS fabrication process suitability. This paper presents substantial contributions to the state-of-the-art, proposing an integral solution regarding the design, modelling, simulation, realization, and characterization of a novel transducer.

Characterization of Unfilled Tungsten Plugs on a 0.35μm CMOS Multilevel Metallization Process

1996 ◽  
Author(s):  
H. Sur ◽  
S. Bothra ◽  
Y. Strunk ◽  
J. Hahn
Keyword(s):  
Process Development ◽  
Process Integration ◽  
Wafer Level ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Integration Approach ◽  
Intermetal Dielectric ◽  
Metallization Process ◽  
Section Analysis

Abstract An investigation into metallization/interconnect failures during the process development phase of an advanced 0.35μm CMOS ASIC process is presented. The corresponding electrical failure signature was electrical shorting on SRAM test arrays and subsequently functional/Iddq failures on product-like test vehicles. Advanced wafer-level failure analysis techniques and equipment were used to isolate and identify the leakage source as shorting of metal lines due to tungsten (W) residue which was originating from unfilled vias. Further cross-section analysis revealed that the failing vias were all exposed to the intermetal dielectric spin-on glass (SOG) material used for filling the narrow spaces between metal lines. The outgassing of the SOG in the exposed regions of the via prior to and during the tungsten plug deposition is believed to be the cause of the unfilled vias. This analysis facilitated further process development in eliminating the failure mechanism and since then no failures of this nature have been observed. The process integration approach used to eliminate the failure is discussed.

scholarly journals Hybrid Multisite Silicon Neural Probe with Integrated Flexible Connector for Interchangeable Packaging

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2605
Author(s):  
Ashley Novais ◽  
Carlos Calaza ◽  
José Fernandes ◽  
Helder Fonseca ◽  
Patricia Monteiro ◽  
...  
Keyword(s):  
Fabrication Process ◽  
High Signal ◽  
Wafer Level ◽  
Neural Probes ◽  
Insertion Force ◽  
Precise Integration ◽  
Flexible Cable ◽  
Flexible Polymer ◽  
Hybrid Silicon

Multisite neural probes are a fundamental tool to study brain function. Hybrid silicon/polymer neural probes combine rigid silicon and flexible polymer parts into one single device and allow, for example, the precise integration of complex probe geometries, such as multishank designs, with flexible biocompatible cabling. Despite these advantages and benefiting from highly reproducible fabrication methods on both silicon and polymer substrates, they have not been widely available. This paper presents the development, fabrication, characterization, and in vivo electrophysiological assessment of a hybrid multisite multishank silicon probe with a monolithically integrated polyimide flexible interconnect cable. The fabrication process was optimized at wafer level, and several neural probes with 64 gold electrode sites equally distributed along 8 shanks with an integrated 8 µm thick highly flexible polyimide interconnect cable were produced. The monolithic integration of the polyimide cable in the same fabrication process removed the necessity of the postfabrication bonding of the cable to the probe. This is the highest electrode site density and thinnest flexible cable ever reported for a hybrid silicon/polymer probe. Additionally, to avoid the time-consuming bonding of the probe to definitive packaging, the flexible cable was designed to terminate in a connector pad that can mate with commercial zero-insertion force (ZIF) connectors for electronics interfacing. This allows great experimental flexibility because interchangeable packaging can be used according to experimental demands. High-density distributed in vivo electrophysiological recordings were obtained from the hybrid neural probes with low intrinsic noise and high signal-to-noise ratio (SNR).

scholarly journals Characterization of Wafer-Level Thermocompression Bonds

2004 ◽  
Vol 13 (6) ◽  
pp. 963-971 ◽  
Author(s):  
C.H. Tsau ◽  
S.M. Spearing ◽  
M.A. Schmidt
Keyword(s):  
Wafer Level

Piezoelectric T-Beam Microactuators

2008 ◽  
Author(s):  
Hareesh K. R. Kommepalli ◽  
Andrew D. Hirsh ◽  
Christopher D. Rahn ◽  
Srinivas A. Tadigadapa
Keyword(s):  
Cross Section ◽  
Fabrication Process ◽  
Mems Fabrication ◽  
Out Of Plane ◽  
Cantilevered Beam ◽  
Piezoelectric Mems ◽  
The Cross ◽  
T Beam ◽  
Cross Section Geometry

This paper introduces a novel T-beam actuator fabricated by a piezoelectric MEMS fabrication process. ICP-RIE etching from the front and back of a bulk PZT chip is used to produce stair stepped structures through the thickness with complex inplane shapes. Masked electrode deposition creates active and passive regions in the PZT structure. With a T-shaped crosssection, and bottom and top flange and web electrodes, a cantilevered beam can bend in-plane and out-of-plane with bimorph actuation in both directions. One of these T-beam actuators is fabricated and experimentally tested. An experimentally validated model predicts that the cross-section geometry can be optimized to produce higher displacement and blocking force.

Characterization of Wafer-Level Au-In-Bonded Samples at Elevated Temperatures

2015 ◽  
Vol 46 (6) ◽  
pp. 2637-2645 ◽  
Author(s):  
Thi-Thuy Luu ◽  
Nils Hoivik ◽  
Kaiying Wang ◽  
Knut E. Aasmundtveit ◽  
Astrid-Sofie B. Vardøy
Keyword(s):  
Elevated Temperatures ◽  
Wafer Level

Fabrication of Ultra Thick Ferromagnetic Structures in Silicon

2004 ◽  
Author(s):  
Debbie G. Jones ◽  
Albert P. Pisano
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Saturation Magnetization ◽  
Silicon Wafer ◽  
Fabrication Process ◽  
Sem Images ◽  
Deep Reactive Ion Etching ◽  
Scanning Electron

A novel fabrication process is presented to create ultra thick ferromagnetic structures in silicon. The structures are fabricated by electroforming NiFe into silicon templates patterned with deep reactive ion etching (DRIE). Thin films are deposited into photoresist molds for characterization of an electroplating cell. Results show that electroplated films with a saturation magnetization above 1.6 tesla and compositions of approximately 50/50 NiFe can be obtained through agitation of the electrolyte. Scanning electron microscopy (SEM) images show that NiFe structures embedded in a 500 μm thick silicon wafer are realized and the roughening of the mold sidewalls during the DRIE aids in adhesion of the NiFe to the silicon.

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