scholarly journals Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

2016 ◽  
pp. 1-11 ◽  
Author(s):  
Farid Temcamani ◽  
Jean-Baptiste Fonder ◽  
Olivier Latry ◽  
Cedric Duperrier
Keyword(s):  
Physical Analysis ◽  
Operating Life ◽  
Gan Hemt

IR Thermography for Temperature Measurements and Fault Location on AlGaN/GaN HEMTs and MMICs

2015 ◽  
Author(s):  
Lény Baczkowski ◽  
Franck Vouzelaud ◽  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Jean-Claude Clément ◽  
...  
Keyword(s):  
Fault Location ◽  
Hot Spot ◽  
Life Time ◽  
High Electron Mobility Transistors ◽  
Junction Temperature ◽  
High Electron ◽  
Ir Thermography ◽  
Operating Life ◽  
Gan Hemt ◽  
Electron Mobility Transistors

Abstract This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of this paper, IR thermography is used for the temperature measurement. Results are compared with 3D thermal simulations (ANSYS) to validate the thermal model of an 8x125pm AIGaN/GaN HEMT on SiC substrate. Measurements at different baseplate temperature are also performed to highlight the non-linearity of the thermal properties of materials. Then, correlations between the junction temperature and the life time are also discussed. In the second part, IR thermography is used for hot spot detection. The interest of the system for defect localization on AIGaN/GaN HEMT technology is presented through two case studies: a high temperature operating life test and a temperature humidity bias test.

scholarly journals S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

2019 ◽  
Vol 100-101 ◽  
pp. 113434 ◽  
Author(s):  
N. Moultif ◽  
O. Latry ◽  
M. Ndiaye ◽  
T. Neveu ◽  
E. Joubert ◽  
...  
Keyword(s):  
Life Test ◽  
Operating Life ◽  
Gan Hemt ◽  
Pulsed Rf

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

2012 ◽  
Vol 52 (9-10) ◽  
pp. 2205-2209 ◽  
Author(s):  
J.-B. Fonder ◽  
L. Chevalier ◽  
C. Genevois ◽  
O. Latry ◽  
C. Duperrier ◽  
...  
Keyword(s):  
Schottky Contact ◽  
Physical Analysis ◽  
Life Test ◽  
Gan Hemt ◽  
Pulsed Rf

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life

2012 ◽  
Vol 52 (11) ◽  
pp. 2561-2567 ◽  
Author(s):  
J.-B. Fonder ◽  
O. Latry ◽  
C. Duperrier ◽  
M. Stanislawiak ◽  
H. Maanane ◽  
...  
Keyword(s):  
Operating Life ◽  
Class Ab ◽  
Gan Hemt ◽  
Class B ◽  
Pulsed Rf

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices

2017 ◽  
Vol 76-77 ◽  
pp. 338-343 ◽  
Author(s):  
A. Graff ◽  
M. Simon-Najasek ◽  
F. Altmann ◽  
J. Kuzmik ◽  
D. Gregušová ◽  
...  
Keyword(s):  
High Resolution ◽  
Ohmic Contact ◽  
Physical Analysis ◽  
Contact Formation ◽  
Gan Hemt ◽  
Ohmic Contact Formation

A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

2011 ◽  
Vol E94-C (7) ◽  
pp. 1193-1198 ◽  
Author(s):  
Akihiro ANDO ◽  
Yoichiro TAKAYAMA ◽  
Tsuyoshi YOSHIDA ◽  
Ryo ISHIKAWA ◽  
Kazuhiko HONJO
Keyword(s):  
Power Amplifier ◽  
Average Power ◽  
Gan Hemt ◽  
Class F

The Novel Dopant Profile Inspection Methodology by FIB

2010 ◽  
Author(s):  
Po Fu Chou ◽  
Li Ming Lu
Keyword(s):  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Real Sample ◽  
Physical Analysis ◽  
The Novel ◽  
High Contrast ◽  
Dopant Profile ◽  
P Type

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.

The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage

2006 ◽  
Author(s):  
Tsung-Te Li ◽  
Chao-Chi Wu ◽  
Jung-Hsiang Chuang ◽  
Jon C. Lee
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Gate Leakage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Voltage Stress ◽  
Leakage Site

Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.

Latch-Up Induced Slit Voiding in Aluminum Metal Lines

1999 ◽  
Author(s):  
Chunyu Zhang ◽  
Lakshmi Vedula ◽  
Shekhar Khandekar
Keyword(s):  
High Temperature ◽  
Line Width ◽  
Fold Increase ◽  
Metal Line ◽  
Operating Life ◽  
Mixed Signal ◽  
Aluminum Metal ◽  
Temperature Operating ◽  
Latch Up

Abstract Latch-up induced during High Temperature Operating Life (HTOL) test of a mixed signal device fabricated with 1.0 μm CMOS, double poly, double metal process caused failures due to an open in aluminum metal line. Metal lines revealed wedge voids of about 50% of the line width. Triggering of latch up mechanism during the HTOL test resulted in a several fold increase of current flowing through the ground metal line. This increase in current resulted in the growth of the wedge voids leading to failures due to open metal lines.

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