The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage

Physical Analysis ◽

Gate Leakage ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron ◽

Voltage Stress ◽

Leakage Site

Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.

Die-Level Scanning Capacitance Microscopy Fault Isolation on SOI Fin-FET Devices for Advanced Semiconductor Nodes

10.31399/asm.cp.istfa2018p0543 ◽

2018 ◽

Author(s):

Lucile C. Teague Sheridan ◽

Tanya Schaeffer ◽

Yuting Wei ◽

Satish Kodali ◽

Chong Khiam Oh

Keyword(s):

Atomic Force Microscopy ◽

Failure Analysis ◽

Fault Isolation ◽

Scanning Capacitance Microscopy ◽

Force Microscopy ◽

Atomic Force

Abstract It is widely acknowledged that Atomic force microscopy (AFM) methods such as conductive probe AFM (CAFM) and Scanning Capacitance Microscopy (SCM) are valuable tools for semiconductor failure analysis. One of the main advantages of these techniques is the ability to provide localized, die-level fault isolation over an area of several microns much faster than conventional nanoprobing methods. SCM, has advantages over CAFM in that it is not limited to bulk technologies and can be utilized for fault isolation on SOI-based technologies. Herein, we present a case-study of SCM die-level fault isolation on SOI-based FinFET technology at the 14nm node.

ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis ◽

The Failure Analysis of Specific Source-to-Drain Dislocation and Case Study

10.31399/asm.cp.istfa2008p0245 ◽

2008 ◽

Author(s):

C. H. Wang ◽

S.W. Lai ◽

C.Y. Wu ◽

B.T. Chen ◽

J.Y. Chiou ◽

...

Keyword(s):

Failure Analysis ◽

Process Improvement ◽

Force Microscopy ◽

Atomic Force ◽

Front End ◽

Electrical Phenomenon ◽

Specific Source ◽

Crystalline Defect

Abstract A failure incurred in the front-end is typically a bottleneck to production due the need for physical failure analysis (PFA). Often the challenge is to perform timely localization of the front-end defect, or finding the exact physical defect for process improvement. Many process parameters affect the device behaviour and cause the front-end defect. Simply, the failures are of two types: high-resistance and leakage. A leakage mode defect is the most difficult to inspect. Although conductive atomic force microscopy and six probes nano-probing are popular tools for front-end failure inspection, some specific defects still need more effort. The electrical phenomenon and analysis of a crystalline defect will be demonstrated in this paper. The details will be discussed below.

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

Atomic Force Probe Analysis of Nonvisible Defects in Sub-100nm CMOS Technologies

10.31399/asm.cp.istfa2006p0503 ◽

2006 ◽

Author(s):

Randal Mulder ◽

Sam Subramanian ◽

Tony Chrastecky

Keyword(s):

Scanning Probe Microscopy ◽

Failure Mechanisms ◽

Test Methods ◽

Scanning Probe ◽

Physical Analysis ◽

Atomic Force ◽

Transmission Electron ◽

Minimum Number ◽

Electrical Analysis

Abstract Traditional micro-probing and electrical characterization at the transistor level for sub-100nm technologies has become very difficult if not virtually impossible. Scanning probe microscopy technology specifically atomic force probing was developed in response to these issues with traditional micro-probing. The case studies presented in this paper demonstrate how atomic force probing was used to characterize failing sub-100nm transistors, identify possible failure mechanisms, and allow device/process engineers to make adjustments to the wafer fabrication process to correct the problem even though physical analysis with scanning election microscope/transmission electron microscope was not able to image and identify a failure mechanism. The probable causes for the transistor level failures are being identified through test methods, computer simulations, and electrical analysis by means of the atomic force probe after the failure has been sufficiently localized to a minimum number of transistors.

ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis ◽

Failure Analysis of Soft Single Column Failure in Advanced Nano SRAM Device with Internal Probing Techniques

10.31399/asm.cp.istfa2005p0046 ◽

2005 ◽

Author(s):

Hung-Sung Lin ◽

Wen-Tung Chang ◽

Chia-Hsing Chao ◽

Jesse Wang ◽

Chang-Tan Lin ◽

...

Keyword(s):

Failure Analysis ◽

Failure Modes ◽

Resistance Change ◽

Electrical Failure ◽

Force Microscopy ◽

Root Cause ◽

Atomic Force ◽

Single Column

Abstract Single column failure [1], one of the complex failure modes in SRAM is possibly induced by multiform defect types at diverse locations. Especially, soft single column failure is of great complexity. As physical failure analysis (PFA) is expensive and time-consuming, thorough electrical failure analysis (EFA) is needed to precisely localize the failing area to greater precision before PFA. The methodology involves testing for failure mode validation, understanding the circuit and using EFA tools such as IR-OBIRCH (InfraRed-Optical Beam Induced Resistance CHange) and MCT (MerCad Telluride, HgCdTe) for analysis. However, the electrical failure signature for soft single column failure is usually marginal, so additional techniques are needed to obtain accurate isolation and electrical characterization instead of blindly looking around. Thus in this discussion, we will also present the use of internal probing techniques like C-AFM [2] (Conductive Atomic Force Microscopy) and a nanoprobing technique [3] for characterizing electrical properties and understanding the root cause.

Scanning tunneling microscopy and atomic force microscopy: New tools for biology

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100155864 ◽

1989 ◽

Vol 47 ◽

pp. 778-779

Author(s):

CE Bracker ◽

P. K. Hansma

Keyword(s):

Physical Property ◽

Scanning Probe ◽

Scanning Tunneling ◽

Small Scale ◽

Tunneling Microscopy ◽

Force Microscopy ◽

New Family ◽

Small Probe ◽

Atomic Force ◽

Transmission Electron

A new family of scanning probe microscopes has emerged that is opening new horizons for investigating the fine structure of matter. The earliest and best known of these instruments is the scanning tunneling microscope (STM). First published in 1982, the STM earned the 1986 Nobel Prize in Physics for two of its inventors, G. Binnig and H. Rohrer. They shared the prize with E. Ruska for his work that had led to the development of the transmission electron microscope half a century earlier. It seems appropriate that the award embodied this particular blend of the old and the new because it demonstrated to the world a long overdue respect for the enormous contributions electron microscopy has made to the understanding of matter, and at the same time it signalled the dawn of a new age in microscopy. What we are seeing is a revolution in microscopy and a redefinition of the concept of a microscope.Several kinds of scanning probe microscopes now exist, and the number is increasing. What they share in common is a small probe that is scanned over the surface of a specimen and measures a physical property on a very small scale, at or near the surface. Scanning probes can measure temperature, magnetic fields, tunneling currents, voltage, force, and ion currents, among others.

ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis ◽

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

10.31399/asm.cp.istfa2003p0413 ◽

2003 ◽

Author(s):

Jon C. Lee ◽

J. H. Chuang

Keyword(s):

Atomic Force Microscopy ◽

Integrated Circuits ◽

Fault Localization ◽

Force Microscopy ◽

Atomic Force ◽

Optical Electron ◽

Defect Isolation ◽

Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

Application of Conductive-AFM in Soft Failure Analysis

10.31399/asm.cp.istfa2017p0327 ◽

2017 ◽

Author(s):

Chuan Zhang ◽

Yinzhe Ma ◽

Gregory Dabney ◽

Oh Chong Khiam ◽

Esther P.Y. Chen

Keyword(s):

Failure Analysis ◽

Test Parameter ◽

Conductive Afm ◽

Force Microscopy ◽

Analysis Methodology ◽

Soft Failure ◽

Atomic Force ◽

Test Conditions ◽

Sensitive Characteristics

Abstract Soft failures are among the most challenging yield detractors. They typically show test parameter sensitive characteristics, which would pass under certain test conditions but fail under other conditions. Conductive-atomic force microscopy (CAFM) emerged as an ideal solution for soft failure analysis that can balance the time and thoroughness. By inserting CAFM into the soft failure analysis flow, success rate of such type of analysis can be significantly enhanced. In this paper, a logic chain soft failure and a SRAM local bitline soft failure are used as examples to illustrate how this failure analysis methodology provides a powerful and efficient solution for soft failure analysis.

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

Case Studies in Atomic Force Probe Analysis

10.31399/asm.cp.istfa2006p0153 ◽

2006 ◽

Author(s):

Randal Mulder ◽

Sam Subramanian ◽

Tony Chrastecky

Keyword(s):

Failure Analysis ◽

Case Studies ◽

Light Emission ◽

Logic Circuits ◽

Contrast Imaging ◽

Atomic Force ◽

Measuring Surface ◽

Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis ◽

Application of AFP in Resolving Systematic Issue in Wafer Fabrication

10.31399/asm.cp.istfa2013p0430 ◽

2013 ◽

Author(s):

Hui Peng Ng ◽

Ghim Boon Ang ◽

Chang Qing Chen ◽

Alfred Quah ◽

Angela Teo ◽

...

Keyword(s):

Failure Analysis ◽

Case Studies ◽

Failure Mechanisms ◽

Critical Role ◽

Process Technology ◽

Atomic Force ◽

Defect Localization ◽

Non Volatile Memory ◽

Visual Failure

Abstract With the evolution of advanced process technology, failure analysis is becoming much more challenging and difficult particularly with an increase in more erratic defect types arising from non-visual failure mechanisms. Conventional FA techniques work well in failure analysis on defectively related issue. However, for soft defect localization such as S/D leakage or short due to design related, it may not be simple to identify it. AFP and its applications have been successfully engaged to overcome such shortcoming, In this paper, two case studies on systematic issues due to soft failures were discussed to illustrate the AFP critical role in current failure analysis field on these areas. In other words, these two case studies will demonstrate how Atomic Force Probing combined with Scanning Capacitance Microscopy were used to characterize failing transistors in non-volatile memory, identify possible failure mechanisms and enable device/ process engineers to make adjustment on process based on the electrical characterization result. [1]

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽

10.3390/photonics8060215 ◽

2021 ◽

Vol 8 (6) ◽

pp. 215

Author(s):

Rajeev R. Kosireddy ◽

Stephen T. Schaefer ◽

Marko S. Milosavljevic ◽

Shane R. Johnson

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Optical Quality ◽

X Ray Diffraction ◽

Interface Quality ◽

Force Microscopy ◽

Atomic Force ◽

Transmission Electron ◽

Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.