Analytical Model for Single Event Burnout of Power MOSFETs

1987 ◽  
Vol 34 (6) ◽  
pp. 1275-1280 ◽  
Author(s):  
Jakob H. Hohl ◽  
Kenneth F. Galloway
Keyword(s):  
Analytical Model ◽  
Single Event ◽  
Power Mosfets

Mechanism for single-event burnout of power MOSFETs and its characterization technique

1992 ◽  
Vol 39 (6) ◽  
pp. 1698-1703 ◽  
Author(s):  
S. Kuboyama ◽  
S. Matsuda ◽  
T. Kanno ◽  
T. Ishii
Keyword(s):  
Single Event ◽  
Power Mosfets ◽  
Characterization Technique

scholarly journals Experimental and simulation studies of radiation‐induced single event burnout in SiC‐based power MOSFETs

2021 ◽  
Author(s):  
Chao Peng ◽  
Zhifeng Lei ◽  
Ziwen Chen ◽  
Shaozhong Yue ◽  
Zhangang Zhang ◽  
...  
Keyword(s):  
Simulation Studies ◽  
Single Event ◽  
Power Mosfets ◽  
Radiation Induced

Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 738-741
Author(s):  
Hiroshi Kono ◽  
Teruyuki Ohashi ◽  
Takao Noda ◽  
Kenya Sano
Keyword(s):  
Threshold Voltage ◽  
Drift Region ◽  
Single Event ◽  
Drain Voltage ◽  
Device Structure ◽  
Pin Diodes ◽  
Power Mosfets ◽  
Single Event Effect ◽  
Significant Difference ◽  
Avalanche Breakdown Voltage

Neutron single event effect (SEE) tolerance of SiC power MOSFETs with different drift region design were evaluated. The SEE is detected over the SEE threshold voltage (VSEE). The failure rate increases exponentially as the drain voltage increases above VSEE. The device with higher avalanche breakdown voltage has higher SEE threshold voltage. The neutron SEE tolerance of MOSFETs and PiN diodes of the same epitaxial structure were also evaluated. There was no significant difference in the neutron SEE tolerance of these devices.

Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs

2020 ◽  
Vol 67 (9) ◽  
pp. 3698-3704
Author(s):  
Jiang Lu ◽  
Jiawei Liu ◽  
Xiaoli Tian ◽  
Hong Chen ◽  
Yidan Tang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Single Event ◽  
Power Mosfets ◽  
Event Response

A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs

2005 ◽  
Vol 49 (1) ◽  
pp. 43-48 ◽  
Author(s):  
Wenwei Yang ◽  
Xinhong Cheng ◽  
Yuehui Yu ◽  
Zhaorui Song ◽  
Dashen Shen
Keyword(s):  
Thin Film ◽  
Analytical Model ◽  
Breakdown Voltage ◽  
Power Mosfets

Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation

2014 ◽  
Author(s):  
R. G. Useinov ◽  
G. I. Zebrev ◽  
V. V. Emelyanov ◽  
A. S. Vatuev
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Single Event ◽  
Power Mosfets ◽  
Heavy Ion Irradiation
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