Recoil-Ion-Induced Single Event Upsets in Nanometer CMOS SRAM Under Low-Energy Proton Radiation

2017 ◽  
Vol 64 (1) ◽  
pp. 654-664 ◽  
Author(s):  
Zhenyu Wu ◽  
Shuming Chen ◽  
Junting Yu ◽  
Jianjun Chen ◽  
Pengcheng Huang ◽  
...  
Keyword(s):  
Low Energy ◽  
Proton Radiation ◽  
Single Event ◽  
Nanometer Cmos ◽  
Single Event Upsets ◽  
Energy Proton

scholarly journals Single event upsets sensitivity of low energy proton in nanometer static random access memory

2016 ◽  
Vol 65 (6) ◽  
pp. 068501
Author(s):  
Luo Yin-Hong ◽  
Zhang Feng-Qi ◽  
Wang Yan-Ping ◽  
Wang Yuan-Ming ◽  
Guo Xiao-Qiang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Low Energy ◽  
Static Random Access Memory ◽  
Single Event ◽  
Access Memory ◽  
Single Event Upsets ◽  
Energy Proton

Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM

2018 ◽  
Vol 27 (7) ◽  
pp. 078501 ◽  
Author(s):  
Yin-Yong Luo ◽  
Feng-Qi Zhang ◽  
Xiao-Yu Pan ◽  
Hong-Xia Guo ◽  
Yuan-Ming Wang
Keyword(s):  
Low Energy ◽  
Single Event ◽  
Single Event Upsets ◽  
Energy Proton

Impact of Total Ionizing Dose on Low Energy Proton Single Event Upsets in Nanometer SRAM

2019 ◽  
Vol 66 (7) ◽  
pp. 1848-1853
Author(s):  
Yinhong Luo ◽  
Fengqi Zhang ◽  
Xiaoyu Pan ◽  
Hongxia Guo ◽  
Yuanming Wang
Keyword(s):  
Low Energy ◽  
Single Event ◽  
Total Ionizing Dose ◽  
Single Event Upsets ◽  
Energy Proton

Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

2007 ◽  
Vol 54 (6) ◽  
pp. 2474-2479 ◽  
Author(s):  
Kenneth P. Rodbell ◽  
David F. Heidel ◽  
Henry H. K. Tang ◽  
Michael S. Gordon ◽  
Phil Oldiges ◽  
...  
Keyword(s):  
Low Energy ◽  
Silicon On Insulator ◽  
Memory Cells ◽  
Single Event ◽  
Single Event Upsets ◽  
Energy Proton

scholarly journals Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

2017 ◽  
Vol 64 (1) ◽  
pp. 464-470 ◽  
Author(s):  
Marta Bagatin ◽  
Simone Gerardin ◽  
Alessandro Paccagnella ◽  
Angelo Visconti ◽  
Ari Virtanen ◽  
...  
Keyword(s):  
Low Energy ◽  
Floating Gate ◽  
Single Event ◽  
Direct Ionization ◽  
Single Event Upsets

scholarly journals Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device

Symmetry ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2030
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Tao Liu ◽  
You-Mei Sun ◽  
Jie Liu
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Low Energy ◽  
Single Event Upset ◽  
Single Event ◽  
High Energy Proton ◽  
Orbital Parameters ◽  
Energy Proton ◽  
Orbital Height ◽  
Selection Of

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.

High and low-energy proton radiation damage in p/n InP MOCVD solar cells

1996 ◽  
Vol 4 (2) ◽  
pp. 101-110 ◽  
Author(s):  
George Rybicki ◽  
Irv Weinberg ◽  
Dave Scheiman ◽  
Carlos Vargas-Aburto ◽  
Roberto Uribe
Keyword(s):  
Solar Cells ◽  
Radiation Damage ◽  
Low Energy ◽  
Proton Radiation ◽  
Energy Proton

Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

2008 ◽  
Vol 55 (6) ◽  
pp. 3394-3400 ◽  
Author(s):  
David F. Heidel ◽  
Paul W. Marshall ◽  
Kenneth A. LaBel ◽  
James R. Schwank ◽  
Kenneth P. Rodbell ◽  
...  
Keyword(s):  
Low Energy ◽  
Test Results ◽  
Single Event Upset ◽  
Single Event ◽  
Energy Proton
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