ScienceGate
Advanced Search
Author Search
Journal Finder
Blog
Sign in / Sign up
ScienceGate
Search
Author Search
Journal Finder
Blog
Sign in / Sign up
Total-Ionizing-Dose Response of Highly-Scaled Gate-All-Around Si Nanowire CMOS Transistors
IEEE Transactions on Nuclear Science
◽
10.1109/tns.2021.3066612
◽
2021
◽
pp. 1-1
Author(s):
Mariia Gorchichko
◽
En Xia Zhang
◽
Pan Wang
◽
Stefano Bonaldo
◽
Ronald D. Schrimpf
◽
...
Keyword(s):
Dose Response
◽
Total Ionizing Dose
◽
Si Nanowire
◽
Cmos Transistors
Download Full-text
Related Documents
Cited By
References
Total Ionizing Dose Response of Multiple-Gate Nanowire Field Effect Transistors
IEEE Transactions on Nuclear Science
◽
10.1109/tns.2017.2702668
◽
2017
◽
pp. 1-1
◽
Cited By ~ 6
Author(s):
M. Gaillardin
◽
C. Marcandella
◽
M. Martinez
◽
O. Duhamel
◽
T. Lagutere
◽
...
Keyword(s):
Dose Response
◽
Field Effect
◽
Field Effect Transistors
◽
Total Ionizing Dose
Download Full-text
Si Nanowire CMOS Transistors and Circuits by Top-Down Technology Approach
ECS Meeting Abstracts
◽
10.1149/ma2008-01/16/634
◽
2008
◽
Keyword(s):
Top Down
◽
Si Nanowire
◽
Cmos Transistors
Download Full-text
Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization
2018 IEEE International Electron Devices Meeting (IEDM)
◽
10.1109/iedm.2018.8614528
◽
2018
◽
Cited By ~ 15
Author(s):
R. Ritzenthaler
◽
H. Mertens
◽
V. Pena
◽
G. Santoro
◽
A. Chasin
◽
...
Keyword(s):
Work Function
◽
Performance Optimization
◽
New Work
◽
Metal Gate
◽
Si Nanowire
◽
Cmos Transistors
Download Full-text
Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates
2016 IEEE International Electron Devices Meeting (IEDM)
◽
10.1109/iedm.2016.7838456
◽
2016
◽
Cited By ~ 35
Author(s):
H. Mertens
◽
R. Ritzenthaler
◽
A. Chasin
◽
T. Schram
◽
E. Kunnen
◽
...
Keyword(s):
Work Function
◽
Si Nanowire
◽
Cmos Transistors
◽
Metal Gates
Download Full-text
Total ionizing dose response of the Hawaii-2RG focal plane array
10.1117/12.621736
◽
2005
◽
Author(s):
Penny Warren
◽
Stephen DeWalt
◽
Morley Blouke
Keyword(s):
Dose Response
◽
Focal Plane
◽
Focal Plane Array
◽
Total Ionizing Dose
Download Full-text
TCAD Simulation of Total Ionizing Dose Response on DSOI nMOSFET
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
◽
10.1109/eurosoi-ulis45800.2019.9041900
◽
2019
◽
Author(s):
Yang Huang
◽
Binhong Li
◽
Sorin Cristoloveanu
◽
Bo Li
◽
Chen Shen
◽
...
Keyword(s):
Dose Response
◽
Total Ionizing Dose
◽
Tcad Simulation
Download Full-text
Dopant-Type and Concentration Dependence of Total-Ionizing-Dose Response in Piezoresistive Micromachined Cantilevers
IEEE Transactions on Nuclear Science
◽
10.1109/tns.2018.2879077
◽
2019
◽
Vol 66
(1)
◽
pp. 397-404
Author(s):
Charles N. Arutt
◽
Pranoy Deb Shuvra
◽
Ji-Tzuoh Lin
◽
Michael L. Alles
◽
Bruce W. Alphenaar
◽
...
Keyword(s):
Concentration Dependence
◽
Dose Response
◽
Total Ionizing Dose
Download Full-text
Total Ionizing Dose Response of Different Length Devices in 0.13 μm Partially Depleted Silicon-on-Insulator Technology
Chinese Physics Letters
◽
10.1088/0256-307x/34/8/088501
◽
2017
◽
Vol 34
(8)
◽
pp. 088501
◽
Cited By ~ 1
Author(s):
Meng-Ying Zhang
◽
Zhi-Yuan Hu
◽
Zheng-Xuan Zhang
◽
Shuang Fan
◽
Li-Hua Dai
◽
...
Keyword(s):
Dose Response
◽
Silicon On Insulator
◽
Total Ionizing Dose
◽
Silicon On Insulator Technology
Download Full-text
Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements
IEEE Transactions on Nuclear Science
◽
10.1109/tns.2016.2633549
◽
2017
◽
Vol 64
(1)
◽
pp. 673-682
◽
Cited By ~ 7
Author(s):
Yifei Mu
◽
Ce Zhou Zhao
◽
Qifeng Lu
◽
Chun Zhao
◽
Yanfei Qi
◽
...
Keyword(s):
Dose Rate
◽
Dose Response
◽
Hafnium Oxide
◽
Low Dose
◽
Gamma Ray
◽
Total Ionizing Dose
◽
Low Dose Rate
◽
Mos Devices
Download Full-text
Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs
IEEE Transactions on Nuclear Science
◽
10.1109/tns.2012.2223828
◽
2012
◽
Vol 59
(6)
◽
pp. 2966-2973
◽
Cited By ~ 10
Author(s):
N. N. Mahatme
◽
E. X. Zhang
◽
R. A. Reed
◽
B. L. Bhuva
◽
R. D. Schrimpf
◽
...
Keyword(s):
Dose Response
◽
Floating Body
◽
Gate Bias
◽
Total Ionizing Dose
◽
Back Gate
◽
Device Geometry
Download Full-text
Sign in / Sign up
Close
Export Citation Format
Close
Share Document
Close