1st quantitative failure-rate calculation for the actual large-scale SRAM using ultra-thin gate-dielectric with measured probability of the gate-current fluctuation and simulated circuit failure-rate

Author(s):  
Tsunehisa Sakoda ◽  
Naoyoshi Tamura ◽  
Shiqin Xiao ◽  
Hiroshi Minakata ◽  
Yusuke Morisaki ◽  
...  
2012 ◽  
Vol 584 ◽  
pp. 428-432 ◽  
Author(s):  
Mayank Chakraverty ◽  
Harish M. Kittur

High gate leakage current, as a central problem, has decelerated the downscaling of minimum feature size of the field effect transistors In this paper, a combination of density functional theory and non equilibrium Green’s function formalism has been applied to the atomic scale calculation of the tunnel currents through CeO2, Y2O3, TiO2 and Al2O3 dielectrics in MOSFETs. The tunnel currents for different bias voltages applied to Si/Insulator/Si systems have been obtained along with tunnel conductance v/s bias voltage plots for each system. The results are in agreement to the use of high dielectric constant materials as gate dielectric so as to enable further downscaling of MOSFETs with reduced gate leakage currents thereby enabling ultra large scale integration. When used as dielectric, TiO2 exhibits extremely low tunnel currents followed by Y2O3 while CeO2 and Al2O3 exhibit high tunnel currents through them at certain bias voltages.


1991 ◽  
Vol 225 ◽  
Author(s):  
P. B. Ghate

ABSTRACTThe reliability of silicon integrated circuits (ICs) has improved significantly in the last decade. The complexity of ICs continues to increase. The semiconductor industry is actively working to a) improve the reliability of very large scale (VLSI) ICs, and b) reduce the failure rates to a value closer to 0.1 FIT by the year 2000. This paper summarizes the current status of quality and reliability of ICs. Some of the reliability limiting factors are described. Inadequacy of conventional accelerated test methods to verify the reliability of VLSI devices is highlighted. A challenging VLSI reliability goal with a failure rate approaching 0.1 FIT requires a) an understanding of the root causes of failure mechanisms, b) a translation of the lessons learned into a set of design rules for the circuit designers, c) appropriate materials and process specifications consistent with manufacturing capabilities, and d) in-process reliability test structures and test procedures. A VLSI failure rate goal of 0.1 FIT presents an exciting challenge for the materials scientists.


2015 ◽  
Vol 4 (4) ◽  
pp. 16-23
Author(s):  
Гапонюк ◽  
N. Gaponyuk ◽  
Калугина ◽  
O. Kalugina ◽  
Львов ◽  
...  

Comparative assessment of the average failure rate of the basic elements of pneumatic systems has been presented. Structure oftechnical systems failures to ensure safety of technological processes involving protective gas has been described. Decisive influence of operating conditionsand parameters of protective gas industrial purity on safety of technological processes has been revealed.Regardless of the complexitylevel of the system, the occurrence of many kinds of failure is caused by negative impact of large-scale and subjective factors associated with the absence of objective monitoring of protective gasindustrial purity. Design, construction and operation of technical systems ensuring safety of technological processes involving protective gas is often based onprinciples typical for technological processes, not taking into account the specific features of operation of objects of protection.


2021 ◽  
Vol 2 (Supplement_1) ◽  
pp. A28-A29
Author(s):  
B Chuong ◽  
J Cho ◽  
J Wheatley

Abstract Introduction Preoperative screening for OSA is strongly advised but attended laboratory sleep studies have limited availability. Portable unattended sleep monitors, such as ApneaLink, may provide a practical solution for large scale preoperative OSA screening. However, these unattended monitors may be prone to data recording failure. Methods We performed a prospective, uncontrolled, before-after study from March 2017 to December 2018 where patients from a pre-operative anaesthetic clinic were screened for OSA with an ApneaLink home sleep study (AHSS). 24 initial patients were provided with version 1 (v.1) recording instructions, while the next 24 patients received version 2 (v.2) which included colour, more detail and larger pictures compared to v.1. Recording failure was defined as an absence of recorded ApneaLink data. We analysed predictors of recording failure including instruction version and patient factors using logistic regression. Results Thirty-three of 48 (69%) patients successfully completed an AHSS. Failure rate was 31%. Median duration of recorded data was 480 minutes. The successful recording group was more likely to have used v.2 instructions than the failure group (61% vs. 27%; p=0.029). The odds ratio for successful recording using v.2 was 4.2 (95% CI: 1.1–16.2). Age, gender, country of birth, and number of days prior to surgery were not associated with recording failure. Discussion There was a high failure rate of AHSS for OSA screening from a preoperative anaesthetic clinic. Clear written instructions with greater use of colours and pictures may improve the recording success rate in this cohort.


2008 ◽  
Vol 6 ◽  
pp. 205-207
Author(s):  
A. Domdey ◽  
K. M. Hafkemeyer ◽  
W. H. Krautschneider ◽  
D. Schroeder

Abstract. This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time.


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